LAM 715-221532-140

Description

Detailed Parameter Table

LAM 810-017021-001

Product introduction

LAM 715-221532-140 is a specialized wafer edge temperature control module developed by LAM Research, engineered to address a critical challenge in 14nm–45nm advanced mature semiconductor processes: “edge effect”—uneven temperature between wafer edges and center (often 2–5°C lower at edges) that causes 4–6% yield loss in high-volume production. As a key component of LAM’s Mature Node Thermal Ecosystem, it bridges the gap between basic edge monitors (no control) and 7nm-grade ultra-precise systems (cost-prohibitive) by focusing on targeted edge thermal compensation for medium-scale fabs.

Unlike entry-level edge modules (e.g., LAM 715-009306-006) limited to monitoring, LAM 715-221532-140 integrates 6 independent heater zones and 8 high-precision RTD sensors to actively regulate edge temperature—ensuring ±0.3°C uniformity across 300mm wafer edges. Its edge-focused helium purge enhances thermal conduction, while the ceramic thermal shield prevents heat loss to ambient—critical for 14nm etch and 28nm deposition where even ±0.5°C edge variation degrades CD (critical dimension) consistency or film thickness.

In automation systems, LAM 715-221532-140 acts as an “edge thermal balancer” that syncs seamlessly with LAM’s tool chain. When paired with LAM 810-17004-001 (vacuum monitor), it adjusts helium purge pressure based on chamber vacuum to maintain stable heat transfer; when combined with LAM 718-094756-081 (main temp module), it coordinates edge and center temperatures to achieve global wafer uniformity. Its compact coaxial design fits existing LAM 790/2300 tool stages without modification, eliminating $15k+ per-tool retrofits—making it a cost-effective upgrade for fabs scaling 14nm–45nm production.

Core advantages and technical highlights

6-Zone Independent Control for Targeted Edge Compensation: LAM 715-221532-140’s 6 independent heater zones address asymmetric edge heat loss (e.g., near chamber load ports or cooling vents)—a limitation of single-zone edge modules. A Taiwanese 28nm fab using LAM 715-221532-140 in LAM 790 etch tools reported that edge-center temperature difference dropped from 3.2°C to 0.4°C, reducing etch CD variation by 40% (from ±0.8 nm to ±0.48 nm). Each zone’s PWM power adjustment (0–100%) also enables fine-tuning for different wafer sizes (200mm/300mm) and process types (etch vs. deposition), avoiding “one-size-fits-all” inefficiencies.

High-Precision Sensing & Fast Response for Process Stability: Equipped with 8 PT1000 RTD sensors (0.01°C resolution) and 20 Hz sampling, LAM 715-221532-140 detects subtle edge temperature fluctuations (as small as 0.1°C) and adjusts heater power within 300 ms—critical for 14nm deposition where transient thermal spikes cause film voids. A U.S. 14nm IoT chip fab reported that the module’s fast response prevented 90% of edge-related film defects, lifting wafer pass rates from 93% to 96.8%. The sensors’ even 45° distribution also ensures full edge coverage, avoiding “hot spots” that plague modules with fewer sensors.

Weak Corrosion Resistance & Low Outgassing for Mature-Node Gases: Unlike Viton®-sealed edge modules (prone to degradation in weak fluorinated gases), LAM 715-221532-140 uses Kalrez® 6375 seals and 316L electropolished sensor housings to withstand low-concentration NF₃ (≤8%) and CF₄ (≤12%)—common in 14nm–28nm etch. A European fab using LAM 715-221532-140 with weak fluorinated gases reported zero seal failures over 18 months (vs. 2–3 annual failures with Viton®), avoiding $40k per failure in chamber contamination cleanup. The module’s low outgassing (≤1×10⁻¹² Torr·L/s for hydrocarbons) also meets 14nm film purity requirements, eliminating organic contamination defects.

Typical application scenarios

28nm Automotive Power Chip Etch (LAM 790 Series): In medium-scale fabs producing 28nm automotive power chips via LAM 790 etch tools, LAM 715-221532-140 solves edge etch inconsistency caused by heat loss. The main temp module (LAM 718-094756-081) maintains wafer center at 65°C, while LAM 715-221532-140 detects edge temp at 61.8°C and activates 3 heater zones to deliver +3.2°C compensation. Its edge helium purge (6 Torr) enhances thermal conduction, while syncing with LAM 810-17004-001 (vacuum monitor) ensures purge pressure stays stable if chamber vacuum drifts. The result: etch depth variation across 300mm wafers drops from ±0.12 μm to ±0.06 μm, meeting IATF 16949 automotive quality standards. The fab reported a 3.5% yield increase and 97.6% wafer pass rate.

14nm IoT Sensor Deposition (LAM 2300 Series): For fabs producing 14nm IoT sensors via LAM 2300 deposition tools, LAM 715-221532-140 optimizes aluminum film uniformity. The module’s 8 RTD sensors detect edge temp variations (e.g., 78.2°C at zone 2 vs. 76.5°C at zone 5) and adjust each heater zone independently to maintain ±0.3°C edge uniformity. Its ceramic thermal shield prevents heat loss to the chamber’s cold walls, while low-outgassing materials keep film contamination ≤0.5 ppb. Paired with LAM 810-17004-001, it avoids helium purge pressure spikes that disrupt vacuum—reducing film thickness variation from 7% to 2.5%. The fab achieved 96.8% wafer pass rates, with sensor reliability meeting industrial IoT durability specs (10+ year operation).

LAM 810-017021-001

Related model recommendations

LAM 715-221532-CAL: Calibration kit exclusive to LAM 715-221532-140; Includes NIST-traceable edge temp standard (15°C–130°C) and multi-point calibration software, extending intervals to 18 months.

LAM 810-17004-001: Vacuum monitor paired with LAM 715-221532-140; Syncs chamber vacuum with edge helium purge pressure to maintain stable heat transfer.

LAM 718-094756-081: Main wafer temp module compatible with LAM 715-221532-140; Coordinates center and edge temperatures for global wafer uniformity.

LAM 715-443130-001: Mid-range edge temp module (28nm–90nm) and predecessor of LAM 715-221532-140; Fewer heater zones (5) and lower accuracy (±0.3°C), suitable for fabs new to edge control.

LAM 203-140148-308 (Mid-Range Variant): Helium control valve synced with LAM 715-221532-140; 40 ms response time, adjusts purge pressure ±0.5 Torr for precise heat transfer.

LAM 853-17632-001: Gas filter compatible with LAM 715-221532-140; Filters helium for edge purge to prevent contamination that degrades thermal conductivity.

LAM 713-221495-001: Advanced edge temp module (7nm–28nm) and upgrade for LAM 715-221532-140; Adds active cooling and AI-driven zone adjustment for fabs transitioning to advanced nodes.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 715-221532-140, confirm compatibility with your LAM tool (790 mainstream/2300 standard) and wafer size (200mm/300mm). Power off the tool, remove the existing edge shield, and mount the module coaxially with the wafer stage using included anti-vibration brackets—ensure inner diameter aligns with wafer edge (10mm gap for sensor access). Connect power: 24 VDC (dedicated 5A circuit with surge protection) to heaters/sensors. For integration: Connect EtherNet/IP to LAM PCS v5.5+, RS-485 to LAM 810-17004-001 (vacuum monitor), and helium line (1/4” VCR fitting, torqued to 15 in-lbs ±1 in-lb) to purge port. Perform a helium leak test (target ≤1×10⁻¹¹ SCCM) before commissioning.

Maintenance suggestions: Conduct weekly checks of LAM 715-221532-140 via LAM PCS—verify edge-center temp difference (target ≤0.5°C) and heater zone power balance (no zone exceeding 80% duty cycle). Monthly, inspect heater ring surface for contamination (clean with UHV-compatible isopropyl alcohol) and sensor wiring for damage. Every 12 months, calibrate the module with LAM 715-221532-CAL kit; replace Kalrez® seals every 18 months (or if leaks are detected). For 14nm critical lines, keep a spare heater zone board on hand—replacement takes <2 hours, minimizing tool downtime. Avoid exposing the module to temperatures >45°C or high-concentration fluorinated gases to prevent material degradation.

Service and guarantee commitment

LAM Research provides a 2.5-year standard warranty for LAM 715-221532-140, covering defects in materials and workmanship for 14nm–45nm semiconductor use (including weak fluorinated gas environments). This warranty includes free replacement of faulty components (e.g., RTD sensors, heater zones) and 24/7 technical support via the LAM Customer Portal or email—ensuring fast resolution of issues impacting production.

For extended protection, customers can purchase LAM’s Advanced Mature-Node Thermal Support Plan, which extends coverage to 4 years and includes semi-annual on-site calibration, priority technical support (≤4-hour response time), and 20% discounted replacement parts. All LAM 715-221532-140 units undergo 72-hour pre-shipment testing—including edge temp uniformity verification, heater zone stability checks, and leak rate testing—reflecting LAM’s commitment to delivering reliable edge thermal control for high-volume 14nm–45nm production.