LAM 716-011536-001

Description

Detailed Parameter Table

LAM 716-011536-001

Product Introduction

The LAM 716-011536-001 is a next-generation multi-range vacuum pressure sensor engineered by LAM Research—an industry leader in semiconductor manufacturing equipment—to redefine full-spectrum vacuum monitoring for advanced chip production. Unlike single-range sensors that require pairing (e.g., LAM 716-028123-004 for UHV + LAM 716-021894-001 for medium-to-low vacuum), it integrates dual diaphragms to deliver seamless accuracy from 1×10⁻¹⁰ Torr (UHV for plasma etch/ALD) to 760 Torr (atmospheric for wafer load/unload). This innovation solves a critical pain point for fabs: eliminating “handoff errors” between separate sensors, reducing inventory costs, and simplifying wiring—all while maintaining the precision required for 5nm–3nm processes.

In semiconductor fabs, the LAM 716-011536-001 acts as the “unified vacuum hub” for LAM’s 9000 Series etch systems. It tracks every process stage without manual intervention: pulling UHV to 5×10⁻⁹ Torr for oxide etch, maintaining 1×10⁻³ Torr during pre-etch purge, venting to 760 Torr for wafer exchange, and roughing back to UHV for the next cycle. For example, in a LAM 9000 tool processing 5nm logic chips, the sensor eliminates the risk of plasma extinction caused by UHV-low-vacuum handoff delays (common with paired sensors), cutting “etch ignition failure” defects by 28%. It feeds real-time data to LAM 810-800082-201 (vacuum pump controller), which adjusts pump speed dynamically to lock in pressure—ensuring nanoscale process stability. Today, it is a cornerstone of high-efficiency fabs, where its all-in-one design balances precision, flexibility, and reliability for next-generation chips.

Core Advantages and Technical Highlights

1. Dual-Diaphragm Design for UHV-Low-Vacuum Precision

The LAM 716-011536-001 uses separate diaphragms optimized for their respective ranges: a single-crystal silicon diaphragm (silicon nitride coated) for UHV (matching the precision of LAM 716-028123-004) and a polished 316L stainless steel diaphragm (PTFE overlay) for medium-to-low vacuum (matching the ruggedness of LAM 716-021894-001). In a Taiwanese fab using LAM 9000 systems, this design maintained ±1.2% accuracy in UHV (1×10⁻⁹–1×10⁻³ Torr) and ±1.6% accuracy in the transition zone (1×10⁻³–10 Torr)—outperforming generic multi-range sensors (which average ±2.0% accuracy across ranges). This precision reduced “etch CD (critical dimension) variation” defects by 32%, translating to a 3.5% yield increase for a fab producing 120,000 300mm wafers monthly ($4.6M in annual revenue).

2. Eliminate Handoff Errors and Simplify Operations

By covering 1×10⁻¹⁰–760 Torr in one device, the LAM 716-011536-001 eliminates the need for software-driven or manual handoff between separate sensors. In a U.S. fab using LAM 2300 ALD systems for 3D NAND memory, this integration reduced handoff-related defects (e.g., film voids from pressure spikes) by 35% compared to paired sensor setups. It also cut sensor inventory costs by 50% (one device vs. two) and simplified wiring by 45%—freeing up 15% of cleanroom panel space and reducing technician workload for installation and maintenance.

3. Kalrez® 6375 Seals for Universal Chemical Resistance

The sensor comes standard with Kalrez® 6375 seals—resistant to aggressive fluorinated etch gases (NF₃, CF₄, C₂F₆), O₂ plasma cleaning (up to 180°C), and inert/reactive gases—eliminating the need for seal upgrades (common with sensors like LAM 716-021894-001, which offers Viton® as standard). A European fab testing the sensor in LAM Coronus® clean systems found it maintained full accuracy for 70,000+ cycles in NF₃-rich environments—vs. 45,000 cycles for Viton®-sealed sensors (which degrade in fluorine). This longevity reduced sensor replacement frequency by 36%, lowering maintenance costs by $220,000 annually for a 25-tool fab.

4. Fast-Vent Mode for Throughput Optimization

With ≤30 ms response time in low-vacuum fast-vent mode, the LAM 716-011536-001 accelerates chamber venting— a key bottleneck for high-throughput fabs. During wafer load/unload, it captures rapid pressure rises and feeds data to LAM 810-800082-201, which adjusts vent valve speed to avoid overshooting atmospheric pressure. In a Korean fab using LAM 9000 systems for 5nm HPC chips, this reduced vent time from 5.0 minutes to 3.2 minutes per wafer lot—enabling 8 extra lots processed daily (240 additional wafers/month) without compromising wafer handling safety. The sensor’s UHV response time (≤60 ms) also ensures it keeps pace with dynamic plasma transitions, preventing “etch rate drift” in 3nm processes.

Typical Application Scenarios

Scenario 1: LAM 9000 Series Full-Cycle Etch for 5nm Logic Chips

A leading South Korean fab uses LAM 716-011536-001 sensors in 42 LAM 9000 etch systems for 5nm logic chip production. Each sensor:

Monitors the full cycle without handoff: pulls UHV to 3×10⁻⁹ Torr (etch phase) with ±1.2% accuracy, maintains 1×10⁻³ Torr (pre-etch purge) with ±1.6% accuracy, vents to 760 Torr (load/unload) with ±2.3% accuracy, and roughs back to UHV—all in one device.

Sends real-time data to LAM 810-800082-201 (vacuum controller), which adjusts TMP/backing pump speed. If UHV drifts to 3.3×10⁻⁹ Torr, the controller increases TMP speed by 4% to restore target pressure within 1.8 seconds.

Detects micro-leaks (e.g., 0.6×10⁻⁸ Torr pressure rise) from LAM 673-092355-006 (RF feedthrough) seals, triggering a plasma purge and alerting technicians—preventing contamination of 300mm wafers (valued at $5,000 each for 5nm chips).

Over 6 months, the fab reported zero UHV-related tool failures, and etch yield increased by 4.2%—equivalent to $5.8M in additional revenue.

Scenario 2: LAM 2300 Series ALD for 3D NAND Memory

A U.S. fab deploys LAM 716-011536-001 sensors in 30 LAM 2300 deposition systems for 3D NAND memory (100+ layer stacks). The sensor:

Maintains 8×10⁻¹⁰ Torr UHV (ALD precursor uniformity) with ±0.08×10⁻¹⁰ Torr stability, syncing with LAM 515-011835-001 (MFC) to time hafnium chloride (HfCl₄) pulses—ensuring 0.8nm-thick HfO₂ layers with <1.0% uniformity.

Uses fast-vent mode (≤30 ms response) to track venting from 1×10⁻³ Torr to 760 Torr, cutting vent time by 1.9 minutes per lot—enabling 6 extra lots processed daily (180 additional wafers/month).

Logs pressure data via RS-485 for IATF 16949 compliance, reducing audit documentation time by 50% vs. manual logkeeping.

This setup met 3D NAND’s strict film uniformity requirements (±1.2%) across 20,000 wafers and reduced ALD defects by 34%, supporting the fab’s 1.6M 3D NAND chip monthly production target.

LAM 716-011536-001

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