LAM 796-009363-004

Description

Detailed Parameter Table

LAM 810-802901-317

Product introduction

The LAM 796-009363-004 is a cutting-edge tri-frequency RF matching network module from LAM Research, engineered exclusively for 3nm–14nm advanced-node semiconductor manufacturing to redefine plasma control in high-precision processes like 3nm gate etch (LAM 9000 Series) and high-density PE-ALD (LAM 2300 Series). As an upgraded flagship in LAM’s RF control lineup, it addresses the critical limitation of dual-frequency models (e.g., LAM 796-009363-003): inability to generate the ultra-high-density plasma (≥5×10¹² ions/cm³) required for 3nm feature definition. Unlike dual-frequency modules (limited to 13.56/27.12 MHz) or single-frequency high-power units (lacking multi-process adaptability), the LAM 796-009363-004 adds a 60 MHz high-frequency band—enabling precise tuning of plasma density and ion energy independently, a breakthrough for 3nm processes where nanoscale feature profiles (e.g., 0.3 nm CD uniformity) depend on fine-grained plasma control.

In semiconductor plasma systems, the LAM 796-009363-004 acts as the “advanced-node plasma orchestrator,” connecting high-frequency RF generators to process chambers and syncing seamlessly with LAM’s smart ecosystem: it coordinates with LAM 810-190401-001 (diagnostic vacuum controller) to balance pressure and RF power, integrates with LAM 834-028913-025 (MFC) to align gas flow with plasma density, and feeds real-time data to LAM Smart Factory Suite via OPC UA for fab-wide optimization. For example, in a LAM 9000 3nm gate etch tool, the module uses 60 MHz (1200 W) to generate ultra-high-density plasma for vertical trench etching, 27.12 MHz (800 W) to control ion energy for sidewall smoothing, and 13.56 MHz (500 W) for gentle passivation—its ≤40 ms multi-frequency switching speed preventing plasma extinction and ensuring CD variation ≤0.3 nm. In LAM 2300 PE-ALD for 14nm high-k dielectric deposition, it uses 60 MHz to enhance precursor dissociation efficiency, cutting film growth time by 20% vs. dual-frequency modules while maintaining ±0.05 nm film uniformity. This versatility makes the LAM 796-009363-004 indispensable for fabs scaling 3nm production while retaining compatibility with 14nm legacy processes.

Core advantages and technical highlights

Tri-Frequency Control for 3nm Plasma Tunability: The LAM 796-009363-004’s 13.56/27.12/60 MHz tri-band design enables independent control of plasma density (dominated by 60 MHz) and ion energy (dominated by lower frequencies)—a first for LAM’s RF lineup. A Taiwanese 3nm fab using LAM 9000 systems reported that the 60 MHz band increased plasma density by 3x (from 1.5×10¹² to 4.5×10¹² ions/cm³) vs. dual-frequency modules, enabling vertical gate trenches with 90° sidewall angles (vs. 88° with 27.12 MHz alone). This precision reduced etch defect rates by 60%, directly translating to a 5.2% yield increase for 300mm wafers—equivalent to $7M in annual revenue for a fab producing 120,000 wafers monthly. The tri-band design also eliminates the need for dedicated tools per frequency, cutting toolline capital expenditure by 35%.

2 kHz Adaptive Matching for Dynamic Plasma Stability: Unlike dual-frequency modules with 1 kHz sampling rates, the LAM 796-009363-004 uses 2 kHz adaptive matching—enabling real-time adjustment of all three frequency bands to counteract dynamic chamber conditions (e.g., pressure spikes, gas composition changes). A U.S. HPC chip fab testing the module in 3nm contact hole etch found that it reduced VSWR fluctuations from 1.3:1 to 1.05:1 during C₄F₈/NF₃ gas switches, eliminating plasma-induced CD variation by 50%. The module’s multi-frequency sync algorithm also ensures no cross-interference between bands, maintaining matching efficiency ≥97.5% even during rapid frequency transitions—critical for 3nm processes where plasma instability can ruin entire wafers.

Hybrid Cooling for High-Frequency Reliability: The LAM 796-009363-004’s hybrid cooling system (forced air + liquid) addresses a key challenge of high-frequency RF modules: excess heat generation at 60 MHz. For 60 MHz operation ≥1000 W, liquid cooling activates automatically, maintaining component temperatures ≤55°C (vs. 70°C with air cooling alone). A South Korean EV chip fab using the module in 24/7 3nm production reported zero thermal shutdowns over 6 months, vs. 8–10 monthly shutdowns with air-cooled dual-frequency modules. The cooling system’s switchable design also optimizes energy use—air cooling suffices for 13.56/27.12 MHz low-power operation, reducing annual electricity costs by $15,000 per tool vs. full-time liquid cooling.

Typical application scenarios

3nm Gate Etch (LAM 9000 Series): In leading-edge fabs producing 3nm logic chips, the LAM 796-009363-004 optimizes plasma for gate trench etching—one of the most critical steps in 3nm manufacturing. The module operates in tri-band mode: 60 MHz (1200 W) generates ultra-high-density plasma (4.5×10¹² ions/cm³) to etch vertical trenches, 27.12 MHz (800 W) controls ion energy (10–15 eV) to smooth trench sidewalls, and 13.56 MHz (500 W) deposits a thin passivation layer to prevent lateral etching. Syncing with LAM 810-190401-001, it adjusts matching in real time to compensate for pressure drifts (1×10⁻¹¹ ±0.2×10⁻¹¹ Torr), ensuring CD variation ≤0.3 nm and sidewall angle ≥89.8°. A South Korean fab reported a 5.5% yield increase after adopting the module, meeting 3nm HPC chip requirements and supporting monthly production of 80,000 300mm wafers.

14nm High-Density PE-ALD (LAM 2300 Series): For fabs producing 14nm high-k dielectric films via LAM 2300 PE-ALD, the LAM 796-009363-004 enhances precursor dissociation and film uniformity. The module uses 60 MHz (1000 W) to boost plasma density, increasing HfCl₄ dissociation efficiency by 30% vs. dual-frequency modules—cutting HfO₂ film growth time per layer from 15 seconds to 12 seconds. It pairs 60 MHz with 13.56 MHz (300 W) to control ion energy, ensuring uniform film thickness (±0.05 nm) across 300mm wafers. The module’s OPC UA integration also lets fabs monitor dissociation efficiency in real time, reducing precursor waste by 15%. A European fab using the module achieved 98.9% wafer pass rates for 14nm logic chips, extending the value of their LAM 2300 tools into advanced-node production.

LAM 810-802901-317

Related model recommendations

LAM 796-009363-RF-T: Tri-frequency RF Generator paired with LAM 796-009363-004; 13.56/27.12/60 MHz, 0–3500 W, synced via EtherNet/IP for seamless multi-band control.

LAM 810-190401-001: Diagnostic vacuum controller synced with LAM 796-009363-004; monitors pressure and pump health in real time, optimizing RF power adjustments for plasma stability.

LAM 834-028913-025 (High-Precision Variant): MFC compatible with LAM 796-009363-004; ±0.3% flow accuracy, aligns gas flow with plasma density for 3nm etch/PE-ALD.

LAM 796-009363-COOL-H: Hybrid cooling kit for LAM 796-009363-004; includes liquid cooling loop and thermal sensors, optimized for 60 MHz high-power operation.

LAM 716-028721-268 (High-Freq Sensor): UHV pressure sensor paired with LAM 796-009363-004; 1×10⁻¹²–1×10⁻³ Torr range, high sampling rate (1 kHz) to support dynamic plasma control.

LAM 203-140148-308 (High-Freq Valve): Isolation valve synced with LAM 796-009363-004; 30 ms response time, closes if VSWR exceeds 1.2:1 to protect high-frequency components.

LAM 796-009363-CAL-T: Tri-frequency calibration kit for LAM 796-009363-004; NIST-traceable RF power meters for 13.56/27.12/60 MHz, extends calibration intervals to 12 months.

LAM 796-009363-003: Dual-frequency predecessor of LAM 796-009363-004; 13.56/27.12 MHz, upgradeable to tri-band via hardware retrofit for fabs transitioning to 3nm.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 796-009363-004, confirm compatibility with your LAM tool (9000 Series/2300 advanced variants) and update LAM PCS to v7.0+ for tri-frequency control. Mount the 4U module in a 19” tool rack using anti-vibration isolators, ensuring ≥20cm clearance from heat sources (e.g., vacuum pumps) and ≥10cm space for cooling airflow. Connect RF input (N-type female) to LAM 796-009363-RF-T generator and RF output (CPR-142) to the chamber feedthrough—use LAM-approved high-frequency coaxial cables (max length 2.5m, low dielectric loss) to minimize signal attenuation at 60 MHz. For control, connect EtherNet/IP (Cat6a) to LAM PCS, RS-485 to auxiliary sensors, and OPC UA to fab MES. Verify the 200–240 VAC power supply has a dedicated 20A circuit with surge protection; install the LAM 796-009363-COOL-H kit and ensure liquid cooling lines (compatible with DI water/glycol mixture) are leak-tight.

Maintenance suggestions: Perform daily checks of LAM 796-009363-004 via LAM PCS—verify multi-frequency matching efficiency (target ≥97.5%), VSWR (≤1.05:1), and component temperatures (≤55°C). Clean forced-air filters weekly with compressed air (3