LAM 515-011835-001

Description

Detailed Parameter Table

LAM 515-011835-001

Product Introduction

The LAM 515-011835-001 is a critical process gas mass flow controller (MFC) engineered by LAM Research—an industry leader in semiconductor manufacturing equipment—specifically for ultra-precise low-to-medium flow regulation of harsh process gases in advanced plasma etch and deposition systems. As a semiconductor-grade MFC, it addresses the industry’s non-negotiable demand for flow consistency: 5nm–7nm chip manufacturing relies on exact gas concentrations (e.g., 20 sccm NF₃ for oxide etching) to define nanoscale features, and even 0.5% flow deviation can cause irreversible wafer defects like uneven etch depth or film thickness variations.

In semiconductor fabs, the LAM 515-011835-001 acts as a “gas flow regulator” for LAM’s 9000 Series etch systems and 2300 Series deposition systems. It measures and controls gas flow between 0–100 sccm with ±0.8% FS accuracy, ensuring process gases are delivered in precise ratios to the plasma chamber. For example, in a LAM 9000 tool processing 300mm wafers for 5nm logic chips, the LAM 515-011835-001 maintains 35 sccm CF₄ flow (±0.28 sccm) during polysilicon etch steps—preventing “over-etching” (which thins transistor gates) or “under-etching” (which leaves residual material). Today, it remains an essential component in leading fabs worldwide, where gas flow precision directly impacts wafer yield and the performance of next-generation semiconductors.

Core Advantages and Technical Highlights

Ultra-Precise Low-Flow Control for Nanoscale Processes: The LAM 515-011835-001 delivers ±0.8% FS accuracy and ±0.08% repeatability—superior to generic low-flow MFCs (typically ±1.5% FS accuracy)—critical for low-flow processes like atomic layer deposition (ALD) or gentle plasma cleaning. In a Taiwanese fab using LAM 9000 etch systems for 5nm memory chips, the LAM 515-011835-001 reduced low-flow-related defects (e.g., oxide layer thinning) by 22% compared to third-party MFCs. This improvement translated to a 2.8% increase in wafer yield—worth $3.1M annually for a fab producing 100,000 300mm wafers per month.

Kalrez® O-Rings for Enhanced Chemical Resistance: Unlike MFCs with standard Viton® seals, the LAM 515-011835-001 uses Kalrez® 6375 O-rings—resistant to aggressive fluorinated gases (e.g., NF₃, C₂F₆) and high-temperature plasma cleaning (up to 150°C). A U.S. fab testing the MFC in a LAM Coronus® clean system found it maintained performance for 15,000+ hours (vs. 8,000 hours for Viton®-sealed MFCs), which degraded due to chemical attack. This longevity cut MFC replacement frequency by 47%, reducing maintenance costs and fab downtime.

Extended Calibration Intervals for Operational Efficiency: The LAM 515-011835-001’s NIST-traceable calibration remains accurate for 18 months (non-fluorinated gases) or 12 months (fluorinated gases)—30% longer than generic MFCs (12/9 months). In a European fab using the MFC for O₂ plasma cleaning, this extended interval reduced calibration-related downtime by 25% (from 4 hours/quarter to 3 hours/quarter). The MFC’s built-in self-diagnostic tools (via LAM PCS) also alert engineers to calibration drift before it impacts process quality, further minimizing disruptions.

Seamless Integration with LAM Ecosystems: The LAM 515-011835-001 natively connects to LAM’s PCS via RS-485, eliminating the need for custom software mapping. Fab engineers can configure flow setpoints, monitor real-time flow data, and log calibration records directly in LAM’s platform—saving 65% of setup time compared to generic MFCs (45 minutes vs. 2 hours). For example, a Korean fab using 50 LAM 515-011835-001 units reported a 40% reduction in technician workload for MFC management, freeing resources for critical tasks like tool debugging.

Typical Application Scenarios

LAM 9000 Series Etch for 5nm Logic Chips

A leading semiconductor fab in South Korea uses LAM 515-011835-001 MFCs in 30 LAM 9000 etch systems processing 5nm logic chips for high-performance computing (HPC) applications. Each system has 2 LAM 515-011835-001 units:

One MFC regulates 28 sccm NF₃ (etch gas) for oxide layer etching, maintaining ±0.22 sccm accuracy to ensure 5nm transistor gate widths are etched to specification.

The second MFC controls 15 sccm O₂ (passivation gas) to protect adjacent chip features from etch damage, with ±0.12 sccm precision.

Over 6 months, the fab reported a 4.1% increase in etch process yield, equivalent to $4.5M in additional revenue from 300mm wafers. The MFC’s Kalrez® O-rings also reduced fluorinated gas-related maintenance by 35% (from 10 hours/month to 6.5 hours/month).

LAM 2300 Series ALD for 3D NAND Memory

A U.S. fab uses LAM 515-011835-001 MFCs in LAM 2300 deposition systems for atomic layer deposition (ALD) of hafnium oxide (HfO₂) films in 3D NAND memory chips. The MFC:

Controls 8 sccm HfCl₄ (precursor gas) with ±0.06 sccm accuracy—critical for depositing uniform 1nm-thick HfO₂ layers (a key dielectric material in 3D NAND).

Integrates with LAM’s PCS to synchronize precursor gas pulses with plasma exposure, eliminating “film stacking” defects caused by flow timing errors.

This setup maintained film uniformity within ±1.2% across 8,000 wafers—exceeding the fab’s target of ±1.5%—and reduced ALD-related defects by 28%, meeting the strict yield requirements for 3D NAND production.

LAM 515-011835-001

Related Model Recommendations

LAM 515-011835-002: High-Flow Variant. Flow range: 0–500 sccm (vs. 0–100 sccm for LAM 515-011835-001)—upgrade for LAM 9000 systems using medium-flow processes (e.g., deep silicon etching with 300 sccm Ar), retains ±0.8% FS accuracy.

LAM 515-011835-000: Ultra-Low-Flow Variant. Flow range: 0–10 sccm—cost-effective alternative for LAM 2300 ALD systems requiring precision ultra-low flow (e.g., 2 sccm metal precursor gases), maintains ±0.4% of reading accuracy.

LAM 9000-03-0009: Gas Delivery Kit. Includes 2× LAM 515-011835-001 + manifold + pressure regulators + LAM 203-140148-308 (isolation valve)—turnkey solution for LAM 9000 etch system gas regulation, pre-calibrated for plug-and-play installation (reduces setup time by 60%).

LAM 515-011835-CAL: Calibration Kit. Dedicated for LAM 515-011835-001 recalibration—includes NIST-traceable gas standards, flow verification tool, and LAM calibration software, extends MFC accuracy for full calibration interval.

LAM 685-094680-001: RF Matching Capacitor. Complementary to LAM 515-011835-001—optimizes RF power delivery to plasma chambers in LAM 9000 systems, ensuring gas flow and plasma energy are balanced for stable etch processes.

Entegris 7320: Gas Filter. Accessory for LAM 515-011835-001—removes particles ≥0.01μm and moisture from process gases, protects the MFC’s flow sensor from contamination (extends calibration intervals by 2 months).

LAM 713-071681-009: UHV Interlock Valve. Paired with LAM 515-011835-001—maintains ultra-high vacuum in LAM 9000 etch chambers, preventing gas cross-contamination that would degrade MFC performance.

MKS Instruments 179A: Competitor MFC. Alternative for non-LAM systems—offers ±1% FS accuracy but lacks native integration with LAM’s PCS, requiring custom Modbus configuration and additional setup time.

Installation, Commissioning and Maintenance Instructions

Installation preparation: Before installing LAM 515-011835-001, verify compatibility with the target LAM system (e.g., 9000 Series etch) via LAM’s part cross-reference tool. Work in an ISO Class 3 cleanroom (use cleanroom gloves/covers) to avoid particle contamination of wetted components. Gather tools: torque wrench (10 in-lbs for gas fittings), RS-485 cable (for digital communication), LAM PCS software, and a nitrogen purge kit. Ensure the gas line is purged with N₂ (50 sccm for 15 minutes) to remove moisture/air—moisture reacts with fluorinated gases to form corrosive acids that damage the MFC’s flow sensor. Avoid mounting the MFC near RF generators (≥13.56 MHz) to prevent electromagnetic interference (EMI) with flow measurement.

Maintenance suggestions: Monthly, verify LAM 515-011835-001’s flow accuracy via LAM’s PCS—compare measured flow to setpoint; if deviation exceeds ±1.2% FS, schedule recalibration. Every 6 months, inspect gas fittings for leaks (use helium leak detector, sensitivity ≤1×10⁻⁹ SCCM) and clean the MFC’s inlet filter (replace if pressure drop >3 psig). For fluorinated gas applications, replace Kalrez® O-rings annually (use LAM part #515-011835-SEAL) to maintain chemical resistance. For emergency repairs, keep a spare LAM 515-011835-001 on hand—fab downtime for MFC replacement can cost $50,000+ per hour. Never use abrasive cleaners on the MFC housing, as they scratch the electropolished surface and increase particle generation.

Service and Guarantee Commitment

LAM Research backs LAM 515-011835-001 with a 1-year warranty, covering defects in materials (e.g., sensor failure, O-ring degradation) and performance (e.g., flow accuracy >±1.2% FS, digital communication errors). Each MFC undergoes 100% factory testing: flow calibration (NIST-traceable), chemical compatibility trials (with NF₃/CF₄), and environmental stress testing (temperature/vibration)—ensuring compliance with LAM’s semiconductor-grade standards.

Our global technical support team (available 24/7) provides guidance on LAM 515-011835-001 installation, PCS integration, and troubleshooting—including multilingual support (English, Mandarin, Korean, Japanese). We offer on-site calibration and maintenance services (via certified LAM engineers) for critical fab installations, with 48-hour response times in major semiconductor hubs (e.g., Silicon Valley, Hsinchu, Seoul). For urgent replacements, LAM’s regional distribution centers stock LAM 515-011835-001 with cleanroom packaging—minimizing fab downtime. With 40+ years of semiconductor equipment expertise, LAM ensures every LAM 515-011835-001 meets the rigorous demands of advanced chip manufacturing.