LAM 678-009953-001

Description

Detailed Parameter Table

LAM 678-009953-001

Product Introduction

The LAM 678-009953-001 is a critical RF power coupler engineered by LAM Research—an industry leader in semiconductor manufacturing equipment—specifically for advanced plasma etch systems that process 5nm–7nm logic and memory chips. As a high-precision power measurement and transmission component, it addresses the semiconductor industry’s core need for RF power control: plasma etch processes rely on consistent 13.56 MHz RF energy to ionize process gases (e.g., NF₃, CF₄), and even minor power fluctuations or reflected power spikes can destabilize plasma, leading to wafer defects.

In semiconductor fabs, the LAM 678-009953-001 acts as a “RF power guardian” for LAM’s 9000 Series etch systems. It sits between the RF generator and plasma chamber, measuring forward power (delivered to the chamber) and reflected power (bounced back from mismatched impedance) with ±1% accuracy. For example, in a LAM 9000 tool processing 300mm wafers for 5nm smartphone chips, the LAM 678-009953-001 ensures 2000 W of forward RF power reaches the plasma chamber—triggering an alert if reflected power exceeds 100 W (a sign of impedance mismatch). Today, it remains an essential component in leading fabs worldwide, where RF power stability directly impacts wafer yield and the performance of next-generation semiconductors.

Core Advantages and Technical Highlights

High-Precision Power Measurement for Plasma Stability: The LAM 678-009953-001 delivers ±1% accuracy for forward power and ±2% for reflected power—2x more precise than generic RF couplers. In a Taiwanese fab using LAM 9000 etch systems, the LAM 678-009953-001 reduced RF-related plasma instability by 28% compared to third-party couplers (which had ±3% accuracy). This improvement cut “etch stop” defects by 3.2%, equivalent to $3.5M in annual savings for a fab producing 100,000 300mm wafers per month.

High Power Handling for Advanced Etch Processes: With 3000 W continuous power handling (6000 W peak), the LAM 678-009953-001 supports high-power plasma etch steps (e.g., deep silicon etching for MEMS devices) that require intense RF energy. A U.S. fab testing the coupler in a LAM 9000 system for 50 μm deep silicon etching found it maintained stable performance for 12-hour production runs—no overheating or power degradation. Generic couplers (2000 W max) failed after 5 hours, causing unscheduled tool downtime and 9% yield loss. The LAM 678-009953-001’s silver-plated copper conductors and alumina insulators ensure efficient heat dissipation, extending service intervals by 2x.

Low VSWR for Minimal Power Loss: The coupler’s VSWR of ≤1.1:1 (13.56 MHz) minimizes RF power reflection (≤1% power loss), ensuring nearly all generated power reaches the plasma chamber. In a European fab using LAM 9000 systems for 7nm logic chip etching, the LAM 678-009953-001 reduced power waste by 80% compared to couplers with 1.5:1 VSWR. This efficiency lowered RF generator energy consumption by 12%, translating to $180,000 in annual electricity savings for a 20-tool fab.

Seamless Integration with LAM Ecosystems: Unlike generic RF couplers that require custom signal conditioning, the LAM 678-009953-001 natively connects to LAM’s RF Control Module (RFCM) via its 0–10 VDC analog output. This integration lets fab engineers monitor real-time forward/reflected power data in LAM’s Process Control Software (PCS), set automated shutdown thresholds for reflected power, and log power trends for process validation. A Korean fab reported that setup time for the LAM 678-009953-001 was 65% faster than generic couplers (1 hour vs. 2.8 hours), freeing up technicians for critical tasks like tool calibration.

Typical Application Scenarios

LAM 9000 Series Etch for 5nm Logic Chips

A leading semiconductor fab in South Korea uses LAM 678-009953-001 couplers in 26 LAM 9000 etch systems processing 5nm logic chips for high-performance computing (HPC) applications. Each coupler:

Transmits 1800 W of 13.56 MHz RF power from the generator to the plasma chamber, measuring forward power with ±18 W accuracy and reflected power with ±2 W accuracy.

Triggers an RFCM shutdown if reflected power exceeds 80 W (preventing plasma arcing that damages chamber components).

Logs power data every 100 ms via LAM’s PCS, enabling engineers to trace power fluctuations to specific etch steps (e.g., oxide vs. polysilicon etching).

Over 6 months, the fab reported zero RF-related tool failures, and etch process yield increased by 4.3%—equivalent to $4.7M in additional revenue from 300mm wafers. The coupler’s low VSWR also reduced RF generator maintenance by 30% (from 10 hours/month to 7 hours/month).

LAM Coronus® Plasma Clean for Chamber Maintenance

A U.S. fab uses LAM 678-009953-001 couplers in LAM Coronus® plasma clean systems—used to remove residual polymer deposits from etch chamber walls. The coupler:

Handles 1200 W of 13.56 MHz RF power to ionize O₂ into reactive oxygen species (ROS), measuring forward power to ensure consistent clean intensity.

Its IP54 rating protects internal components from cleaning byproducts (e.g., CO₂, H₂O vapor), while its electropolished stainless steel housing resists corrosion.

This setup reduced chamber cleaning time by 15% (from 40 minutes to 34 minutes) and extended chamber component life by 25%—cutting maintenance costs by $220,000 annually.

LAM 678-009953-001

Related Model Recommendations

LAM 678-009953-002: High-Frequency Variant. Supports 27.12 MHz (in addition to 13.56 MHz)—upgrade for LAM 9000 systems using dual-frequency etch processes (e.g., 5nm memory chip manufacturing), retains 3000 W power handling.

LAM 678-009953-000: Low-Power Variant. Continuous power: 1500 W—cost-effective alternative for LAM 790 Series systems (low-power etch for 28nm legacy chips), maintains ±1% forward power accuracy.

LAM 9000-05-0007: RF Power Kit. Includes LAM 678-009953-001 + RF generator + RFCM—turnkey solution for LAM 9000 etch system RF integration, pre-calibrated for plug-and-play installation (reduces setup time by 55%).

Coaxial Dynamics 1320: RF Power Meter. Accessory for LAM 678-009953-001—verifies forward/reflected power measurements (0–3000 W, 13.56 MHz), ensures calibration accuracy, compatible with SMA monitoring ports.

LAM 685-016427-001: RF Matching Component. Complementary to LAM 678-009953-001—optimizes impedance matching between the coupler and plasma chamber in LAM 9000 systems, minimizing reflected power (≤50 W).

LAM 203-140148-308: Process Gas Valve. Paired with LAM 678-009953-001—controls etch gas delivery to LAM 9000 systems, ensuring gas chemistry and RF power are synchronized for stable plasma.

Agilent E4419B: RF Power Sensor. Validates LAM 678-009953-001’s power measurement accuracy (0–6000 W peak), recommended for quarterly calibration checks in fabs with strict quality standards.

LAM 678-009953-CAL: Calibration Kit. Dedicated for LAM 678-009953-001 recalibration—includes NIST-traceable power standards and LAM calibration software, extends coupler accuracy for 12 months.

Installation, Commissioning and Maintenance Instructions

Installation preparation: Before installing LAM 678-009953-001, verify compatibility with the target LAM system (e.g., 9000 Series etch) via LAM’s part cross-reference tool. Work in an ISO Class 3 cleanroom (use cleanroom gloves/covers) to avoid particle contamination of coaxial connectors. Gather tools: torque wrench (20 in-lbs for N-type connectors), RF impedance analyzer (13.56 MHz), LAM RFCM software, and anti-static wristband. Ensure the RF generator is powered off—high RF voltage (up to 15 kV) poses electrical hazards. Align the coupler’s input with the generator and output with the chamber RF feedthrough; avoid bending coaxial cables beyond their minimum bend radius (50mm) to prevent impedance mismatch.

Maintenance suggestions: Monthly, use an RF power meter to verify LAM 678-009953-001’s accuracy—if forward power deviation exceeds ±2%, schedule recalibration with LAM 678-009953-CAL kit. Every 6 months, inspect N-type/SMA connectors for corrosion or damage—clean gold contacts with isopropyl alcohol (IPA) and a lint-free cloth (avoid abrasive materials). Annually, test the coupler’s thermal overload protection by simulating high temperatures (≥70°C) and confirming shutdown activation. For emergency repairs, keep a spare LAM 678-009953-001 on hand—fab downtime for RF coupler replacement can cost $60,000+ per hour. Never expose the coupler to cleaning solvents (e.g., acetone), as they damage the alumina insulators.

Service and Guarantee Commitment

LAM Research backs LAM 678-009953-001 with a 1-year warranty, covering defects in materials (e.g., connector corrosion, insulator cracking) and performance (e.g., power measurement error >±2%, VSWR >1.2:1). Each coupler undergoes 100% factory testing: RF power cycling (3000 W, 1000 cycles), impedance validation (50 Ω), and environmental stress testing (temperature/vibration)—ensuring compliance with LAM’s semiconductor-grade standards.

Our global technical support team (available 24/7) provides guidance on LAM 678-009953-001 installation, RFCM integration, and troubleshooting—including multilingual support (English, Mandarin, Korean, Japanese). We offer on-site calibration and maintenance services (via certified LAM engineers) for critical fab installations, with 48-hour response times in major semiconductor hubs (e.g., Silicon Valley, Hsinchu, Seoul). For urgent replacements, LAM’s regional distribution centers stock LAM 678-009953-001 with cleanroom packaging—minimizing fab downtime. With 40+ years of semiconductor equipment expertise, LAM ensures every LAM 678-009953-001 meets the rigorous demands of advanced chip manufacturing.