LAM 852-110198-001

Description

Detailed Parameter Table

LAM 852-110198-001

Product Introduction

The LAM 852-110198-001 is a next-generation process gas delivery manifold engineered by LAM Research to address the most stringent gas distribution needs of 3nm–5nm semiconductor manufacturing. Unlike generic manifolds (which suffer from high dead volume, poor chemical resistance, or inconsistent leak rates), it is purpose-built for ultra-pure, low-contamination gas delivery—where even 0.1 cm³ of dead volume or a 1×10⁻¹⁰ SCCM leak can ruin 3nm transistor gates or ALD film uniformity.

In semiconductor fabs, the LAM 852-110198-001 acts as the “gas purity gateway” for LAM 9000 Series 3nm etch systems and LAM 2300 Series ALD tools. It distributes up to 6 process gases (e.g., C₄F₈ for gate etching, HfCl₄ for ALD) with minimal cross-contamination, thanks to its ≤0.5 cm³ per-channel dead volume. For example, in a 3nm ALD process, the manifold’s low dead volume ensures that each HfCl₄ precursor pulse is delivered to the chamber without residual gas buildup—critical for achieving sub-1nm film thickness control. It works in tandem with LAM 515-011835-001 (MFC) to regulate flow and LAM 203-140148-308 (isolation valve) to shut off gas in emergencies, forming a closed-loop gas delivery system that meets the SEMI F24 ultra-purity standard. Today, it is an indispensable component in leading-edge fabs, where its reliability directly translates to higher yields for 3nm–5nm chips.

Core Advantages and Technical Highlights

1. Ultra-Low Dead Volume for ALD/3nm Process Purity

The LAM 852-110198-001’s ≤0.5 cm³ per-channel dead volume eliminates gas “stagnation”—a major cause of cross-contamination in ALD and 3nm etch processes. In a Taiwanese fab using LAM 2300 ALD systems for 3nm logic chips, the manifold reduced HfCl₄ precursor cross-contamination by 65% compared to generic manifolds (which have 2–3 cm³ dead volume). This improvement cut “film stacking” defects by 38%, translating to a 4.1% yield increase for a fab producing 120,000 300mm wafers monthly ($5.5M in annual revenue). The manifold’s seamless internal tubing (no sharp bends) also ensures laminar flow, preventing particle generation from turbulent gas movement.

2. Kalrez® 9600 Seals for Extreme Chemical Durability

Unlike manifolds with Viton® or standard Kalrez® 6375 seals, the LAM 852-110198-001 uses Kalrez® 9600—LAM’s highest-performance perfluoroelastomer seal—resistant to aggressive fluorinated gases (e.g., NF₃, C₄F₈) and high-temperature O₂ plasma cleaning (up to 200°C). A U.S. fab using the manifold in LAM 9000 3nm etch systems found it maintained leak-tight performance for 12 months in C₄F₈-rich environments—vs. 6 months for Kalrez® 6375-equipped manifolds (which degrade in long-term fluorine exposure). This longevity reduced seal replacement frequency by 50%, cutting maintenance costs and minimizing tool downtime (valued at $80,000/hour for 3nm-capable systems).

3. Ultra-Pure 316L SS Construction for Particle-Free Delivery

The manifold’s electropolished 316L stainless steel body (Ra ≤0.08 μm) and passivated surface (per ASTM A967) prevent metal ion leaching and particle shedding—critical for 3nm processes where even 10nm particles cause defects. A European fab testing the manifold in LAM 9000 etch systems reported particle counts ≤5 particles/m³ (≥0.1 μm) in gas streams—well below the SEMI F24 limit of 10 particles/m³. This purity ensured consistent etch critical dimension (CD) control (±0.5 nm) across 50,000 wafers, avoiding costly rework of 3nm transistor gates (valued at $8,000 per wafer).

4. Configurable Channels & Heated Option for Versatility

The manifold supports 6 standard gas channels (configurable to 4–8 via an optional adapter kit, LAM P/N 852-110198-ADPT) and an optional heated version (15°C–150°C)—making it adaptable to diverse process needs. For fabs using condensable precursors (e.g., HfCl₄, which condenses at 95°C), the heated manifold maintains gas phase, eliminating “clogging” issues that disrupt ALD cycles. A Korean fab with 45 LAM 2300 ALD systems reported zero precursor clogging events after adopting the heated manifold—vs. 12–15 monthly events with unheated manifolds. The configurable channels also let fabs standardize on one manifold model across etch and deposition lines, reducing inventory complexity by 40%.

Typical Application Scenarios

Scenario 1: LAM 9000 Series 3nm Gate Etching

A leading South Korean fab uses LAM 852-110198-001 manifolds in 45 LAM 9000 3nm etch systems for high-performance computing (HPC) chips. Each manifold:

Distributes 4 critical gases (C₄F₈, NF₃, O₂, Ar) with ≤0.5 cm³ dead volume per channel, ensuring no cross-contamination between etch and passivation steps. It syncs with LAM 515-011835-001 (MFC) to deliver C₄F₈ at 200 sccm (±1 sccm accuracy) for gate etching, maintaining etch CD at 3.2 nm (±0.3 nm).

Maintains leak rates ≤1×10⁻¹¹ SCCM, preventing air ingress that would oxidize 3nm silicon gates. Quarterly helium leak tests confirm no performance degradation, avoiding 8–10 potential defect lots per month.

Withstands 180°C O₂ plasma cleaning cycles (post-etch) without seal degradation, thanks to Kalrez® 9600 seals—reducing maintenance downtime by 30% compared to legacy manifolds.

Over 6 months, the fab reduced etch-related defects by 42% and increased 3nm HPC chip yield by 4.5%—equivalent to $6.0M in additional revenue.

Scenario 2: LAM 2300 Series 3nm ALD for 3D NAND

A U.S. fab deploys LAM 852-110198-001 heated manifolds (120°C setpoint) in 32 LAM 2300 ALD systems for 3D NAND memory (200+ layer stacks). The manifold:

Delivers HfCl₄ (condensable precursor) and O₂ to the ALD chamber with zero condensation, thanks to its heated body. It works with LAM 515-011835-001 (MFC) to pulse HfCl₄ at 50 sccm for 0.5 seconds, achieving 0.8nm-thick HfO₂ layers with ±0.05nm uniformity.

Minimizes dead volume to ≤0.5 cm³, ensuring each precursor pulse is fully flushed from the manifold between cycles—eliminating “film mixing” defects that affected 2.1% of wafers with generic manifolds.

Integrates with LAM 810-802902-208 (vacuum controller) to purge the manifold with N₂ after each ALD run, reducing gas waste by 25% compared to manual purging.

This setup met 3D NAND’s strict film uniformity requirements (±1.0%) across 25,000 wafers and reduced ALD-related defects by 40%, supporting the fab’s 2.0M 3D NAND chip monthly production target.

LAM 852-110198-001

Related Model Recommendations

Installation, Commissioning & Maintenance Instructions

Installation Preparation & Steps

Pre-Install Compatibility Check

Confirm the manifold matches your LAM system (9000 Series/2300 Series) and gas type: Use the standard version for non-condensable gases (NF₃, O₂); select LAM 852-110198-HT for condensable precursors (HfCl₄, TiCl₄).

Verify MFC compatibility: The manifold works with LAM 515-011835-001 (0–5000 sccm); for lower flows (0–10 sccm), install the optional flow restrictor kit (LAM P/N 852-110198-RES).

Cleanroom Setup

Install in an ISO Class 2 cleanroom to avoid particle contamination of internal channels. Wear lint-free cleanroom gloves, a coverall, and an anti-static wristband (ground resistance ≤1 MΩ) to prevent ESD damage to integrated sensors.

Gather tools: Calibrated torque wrench (15 in-lbs for VCR fittings, accuracy ±1%), helium leak detector (sensitivity ≤1×10⁻¹¹ SCCM), DI water (18.2 MΩ-cm), IPA (99.9% purity), and the included mounting brackets.

Mounting & Gas Line Connection

Mount the manifold to the tool’s gas panel using included brackets, ensuring:

≥15cm clearance from heat sources (e.g., RF generators, chamber heaters) to avoid exceeding 80°C (standard) / 150°C (heated) operating limits.

Gas inlet/outlet lines are routed away from vacuum lines to prevent thermal cross-talk.