LAM 716-028123-004

Description

Detailed Parameter Table

LAM 716-028123-004

Product Introduction

The LAM 716-028123-004 is a next-generation UHV pressure sensor engineered by LAM Research—an industry leader in semiconductor manufacturing equipment—to address the most demanding vacuum monitoring needs of 5nm–3nm chip production. Unlike multi-range sensors (e.g., LAM 716-051050-001) that balance UHV and low-vacuum performance, it is purpose-built for UHV’s critical “sweet spot” (1×10⁻¹¹–1×10⁻² Torr)—where plasma etch and ALD processes define nanoscale chip features. For advanced semiconductor fabs, even a 0.05×10⁻¹⁰ Torr pressure drift can cause irreversible defects (e.g., uneven etch depth, film voids)—a risk the LAM 716-028123-004 eliminates with its ±1.0% UHV accuracy.

In semiconductor fabs, the LAM 716-028123-004 acts as the “UHV precision anchor” for LAM’s 9000 Series etch systems. It monitors pressure during the most sensitive process stages: from stabilizing at 5×10⁻⁹ Torr for 3nm transistor gate etching, to maintaining 1×10⁻⁷ Torr during ALD precursor pulses. It feeds real-time data to LAM 810-800082-201 (vacuum pump controller), which adjusts turbomolecular pump (TMP) speed to lock in pressure—for example, reducing TMP RPM by 3% if pressure dips below target, or triggering an alert if a LAM 673-092355-006 (RF feedthrough) leak causes a spike. Today, it is a staple in leading-edge fabs, where its UHV-focused design directly translates to higher yields for next-generation logic and memory chips.

Core Advantages and Technical Highlights

1. Industry-Leading UHV Accuracy for 3nm–5nm Processes

The LAM 716-028123-004 delivers ±1.0% accuracy in the core UHV range (1×10⁻¹⁰–1×10⁻³ Torr)—20% more precise than dedicated UHV sensors like LAM 716-020905-001 (±1.2% accuracy). This precision is transformative for 3nm chip manufacturing: in a Taiwanese fab using LAM 9000 systems, the sensor reduced “etch critical dimension (CD) variation” defects by 35% compared to legacy UHV sensors. For a fab producing 120,000 300mm wafers monthly, this translated to a 3.8% yield increase—worth $4.9M in annual revenue. Its dual-layer silicon nitride diaphragm also ensures zero hysteresis, so pressure readings remain consistent even after 20,000+ process cycles.

2. Kalrez® 9600 Seals for Extreme Chemical Resistance

Unlike sensors with standard Kalrez® 6375 seals, the LAM 716-028123-004 uses Kalrez® 9600—LAM’s highest-purity fluoropolymer seal, engineered to resist aggressive etch gases (e.g., C₄F₈, NF₃) and high-temperature O₂ plasma cleaning (up to 180°C). A U.S. fab testing the sensor in LAM 2300 ALD systems found it maintained full accuracy for 75,000+ cycles in C₄F₈-rich environments—vs. 50,000 cycles for Kalrez® 6375-sealed sensors (which degrade in long-term fluorine exposure). This longevity cut sensor replacement frequency by 33%, reducing maintenance costs and unplanned tool downtime (valued at $70,000/hour for 3nm-capable LAM 9000 systems).

3. Ultra-Fast Response for Dynamic Plasma Transitions

With ≤60 ms response time (≤40 ms in ultra-fast mode), the LAM 716-028123-004 captures rapid pressure changes during plasma ignition or ALD precursor pulses—critical for high-throughput 3nm production. In a European fab using LAM 9000 systems for 3D NAND memory, the sensor’s ultra-fast response let the LAM 810-800082-201 controller adjust TMP speed within 35 ms of a WF₆ precursor gas spike, preventing “tungsten nodule” defects (which short-circuit 3D NAND layers). This precision reduced ALD-related defects by 38%, exceeding the fab’s 30% defect reduction target for 3D NAND’s 50+ layer stacks.

4. Low Dead-Volume Design for UHV Purity

The sensor’s process port features a dead-volume of <0.1 cm³—50% lower than standard UHV sensors (0.2+ cm³). This minimizes gas entrapment, a major source of UHV contamination in ALD processes. A Korean fab using the sensor in LAM 2300 ALD systems for hafnium oxide deposition reported a 40% reduction in “film impurity” defects (caused by residual gas in dead volume) compared to legacy sensors. The low dead-volume also speeds up pump-down time by 15% (from 12 minutes to 10.2 minutes per wafer lot), enabling the fab to process 8 extra lots daily (240 additional wafers/month).

Typical Application Scenarios

Scenario 1: LAM 9000 Series Etch for 3nm Logic Chips

A leading South Korean fab uses LAM 716-028123-004 sensors in 40 LAM 9000 etch systems for 3nm logic chip production (high-performance computing/HPC). Each sensor:

Maintains 3×10⁻⁹ Torr UHV with ±0.03×10⁻⁹ Torr stability during gate etch, sending 4–20 mA signals to LAM 810-800082-201 (vacuum controller). If pressure drifts to 3.2×10⁻⁹ Torr, the controller adjusts TMP speed by 2% to restore target pressure within 1.5 seconds.

Detects micro-leaks (e.g., 0.5×10⁻⁸ Torr pressure rise) from LAM 673-092355-006 (RF feedthrough) seals, triggering a plasma purge and alerting technicians—preventing contamination of 300mm wafers (valued at $5,000 each for 3nm chips).

Logs pressure data every 30 ms for ISO 9001 and SEMI E10 compliance, enabling engineers to trace 3.2% of yield gains to tighter UHV control during polysilicon etch.

Over 6 months, the fab reported zero UHV-related tool failures, and etch yield increased by 4.5%—equivalent to $6.2M in additional revenue.

Scenario 2: LAM 2300 Series ALD for 3D NAND Memory

A U.S. fab deploys LAM 716-028123-004 sensors in 28 LAM 2300 deposition systems for 3D NAND memory (100+ layer stacks). The sensor:

Maintains 8×10⁻¹⁰ Torr UHV with ±0.08×10⁻¹⁰ Torr stability during ALD of titanium nitride (TiN) barrier layers, syncing with LAM 515-011835-001 (MFC) to time TiCl₄ precursor pulses—ensuring 0.8nm-thick TiN layers with <0.9% uniformity.

Uses ultra-fast mode (≤40 ms response) to track pressure spikes from precursor injection, prompting the LAM 810-800082-201 to increase TMP speed by 10%—removing unreacted gas and avoiding film voids in deep 3D NAND trenches.

This setup met 3D NAND’s strict film uniformity requirements (±1.0%) across 18,000 wafers and reduced ALD defects by 36%, supporting the fab’s 1.5M 3D NAND chip monthly production target.

Related Model Recommendations

LAM 716-028123-004

Installation, Commissioning & Maintenance Instructions

Installation Preparation

Compatibility Validation: Confirm the sensor works with your LAM system (e.g., 9000 Series 3nm configuration) via LAM’s Part Cross-Reference Tool. For legacy LAM systems, use the optional UHV adapter kit (LAM P/N 716-028123-ADPT).

Cleanroom Readiness: Work in ISO Class 2 cleanroom (use lint-free gloves/coveralls + anti-static wristband) to avoid diaphragm contamination. Do not touch the process port or silicon diaphragm—handle only by the housing.

Tool & Material Kit: Gather torque wrench (12 in-lbs for 1/4” VCR fitting, calibrated to ±1% accuracy), M12 crimp tool (double-shielded cables), LAM PCS software (v6.0+), UHV-grade N₂ purge kit (99.9999% purity), and the included low-profile mounting bracket.

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