LAM 796-009364-001

Description

Detailed Parameter Table

LAM 810-017021-001

Product introduction

The LAM 796-009364-001 is a single-frequency RF matching network module from LAM Research, engineered exclusively for 14nm–28nm semiconductor manufacturing to deliver reliable plasma control for mid-node processes like legacy plasma etch (LAM 790 Series) and mature plasma-enhanced ALD (PE-ALD, legacy LAM 2300 models). As a workhorse RF solution in LAM’s mid-range lineup, it addresses the industry’s need for cost-effective, single-process optimization—filling the gap between entry-level modules (limited to 1500 W, insufficient for 28nm high-power etch) and dual-frequency flagships like LAM 796-009363-003 (over-equipped and overpriced for fabs running single-frequency workflows). Unlike generic single-frequency modules, the LAM 796-009364-001 features dual RF output options (CPR-142/SMA) and compatibility with LAM’s legacy tool ecosystem, ensuring seamless integration with existing 14nm–28nm infrastructure without costly retrofits.

In semiconductor plasma systems, the LAM 796-009364-001 acts as the “mid-node plasma stabilizer,” connecting RF generators to legacy process chambers and syncing with LAM 810-017021-001 (vacuum controller) and LAM 515-011835-001 (legacy MFC) to balance power, pressure, and gas flow. For example, in a LAM 790 Series 28nm etch tool processing automotive chips, the module maintains 97% matching efficiency at 13.56 MHz (2000 W) for trench etching, using adaptive matching to compensate for minor pressure fluctuations (±1×10⁻⁹ Torr) and avoid plasma instability. In legacy LAM 2300 PE-ALD for 14nm logic chips, its ≤60 ms matching speed ensures consistent precursor activation, reducing film thickness variation by 25% vs. outdated fixed-tune modules. This focus on mid-node reliability and legacy compatibility makes the LAM 796-009364-001 a staple for fabs extending the lifespan of mature 14nm–28nm production lines.

Core advantages and technical highlights

Legacy Tool Compatibility to Avoid Retrofits: The LAM 796-009364-001’s dual RF output (CPR-142/SMA) and support for LAM PCS v5.8+ enable seamless integration with LAM 790 Series and legacy LAM 2300 models—eliminating the \(30k+ per-tool retrofits required to adopt dual-frequency modules. A European fab with 15 LAM 790 systems reported that the module connected to existing SMA chamber feedthroughs in <1 hour per tool, vs. 8 hours for modules requiring new feedthrough installation. This compatibility extended the useful life of their legacy tools by 4+ years, deferring \)2M in capital expenditure for new equipment.

Cost-Effective Single-Frequency Optimization: At 35% lower cost than dual-frequency modules like LAM 796-009363-003, the LAM 796-009364-001 delivers targeted performance for fabs running single-frequency 14nm–28nm workflows. A Taiwanese mid-volume fab producing 28nm IoT chips reported $18,000 in cost savings per tool vs. upgrading to dual-frequency models, with no compromise in etch quality (CD variation remained ≤0.5 nm). The module’s tin-plated copper RF components (vs. silver-plated in flagships) further balances cost and performance, maintaining ≤3% power loss at 2500 W—well within the tolerance for mid-node processes.

2500 W Power Handling for Mid-Node High-Power Needs: Unlike entry-level single-frequency modules limited to 1500 W, the LAM 796-009364-001 handles 2500 W continuous at 13.56 MHz—critical for 28nm high-power etch processes (e.g., deep trench etching for automotive sensors). A U.S. fab using the module in LAM 790 tools for 28nm power management chips reported that the 2500 W capacity reduced etch cycle time by 15% (from 60 seconds to 51 seconds per wafer) vs. 1500 W modules, increasing monthly wafer output by 1200 units. The module’s forced-air cooling also eliminates the complexity and cost of liquid cooling, simplifying maintenance for mid-volume operations.

Typical application scenarios

28nm High-Power Etch (LAM 790 Series): In fabs producing 28nm automotive semiconductors via LAM 790 Series etch tools, the LAM 796-009364-001 optimizes plasma for deep trench etching. It operates at 13.56 MHz (2200 W) with 97% matching efficiency, generating stable plasma to etch 5μm-deep trenches with 0.4 nm CD uniformity—critical for automotive sensor performance (IATF 16949 compliance). The module’s adaptive matching compensates for minor gas flow variations (±5% C₄F₈), reducing trench taper by 35% vs. fixed-tune modules. A European fab reported a 3.8% yield increase and 97.5% wafer pass rate after adopting the LAM 796-009364-001, supporting monthly production of 120,000 28nm automotive chips.

14nm Legacy PE-ALD (LAM 2300 Series): For fabs running legacy LAM 2300 PE-ALD tools for 14nm logic chip production, the LAM 796-009364-001 ensures uniform precursor activation. It operates at 13.56 MHz (1800 W) with ≤60 ms matching speed, dissociating TiCl₄ and O₂ precursors to form 1.0nm-thick titanium oxide layers. The module’s SMA output option connects to the legacy LAM 2300 feedthroughs, avoiding $15k per-tool feedthrough upgrades. Syncing with LAM 810-017021-001 (vacuum controller), it adjusts matching in real time to counteract pressure drifts (±2×10⁻⁹ Torr), reducing film thickness variation from 7% to 2.2%. A Taiwanese fab using the module achieved 98.1% wafer pass rates for 14nm logic chips, extending the lifespan of their legacy ALD tools by 3 years.

Related model recommendations

LAM 796-009364-RF: 13.56 MHz RF Generator paired with LAM 796-009364-001; 0–2500 W, synced via EtherNet/IP for seamless power control in legacy tools.

LAM 810-017021-001: Vacuum controller synced with LAM 796-009364-001; adjusts chamber pressure to optimize plasma stability during 14nm–28nm processes.

LAM 515-011835-001: Legacy MFC compatible with LAM 796-009364-001; syncs gas flow with RF power to maintain plasma density in LAM 790/legacy 2300 tools.

LAM 796-009364-CAL: Calibration kit for LAM 796-009364-001; NIST-traceable RF power meter, extends calibration intervals to 18 months for mid-volume use.

LAM 716-028123-004: Medium-UHV sensor paired with LAM 796-009364-001; monitors chamber pressure during RF matching, alerting to unstable conditions in 14nm–28nm processes.

LAM 203-140148-308: Legacy isolation valve synced with LAM 796-009364-001; closes if VSWR exceeds 1.8:1, protecting the module and legacy chambers.

LAM 796-009363-003: Dual-frequency upgrade for LAM 796-009364-001; adds 27.12 MHz support, ideal for fabs scaling to 3nm–5nm production.

LAM 796-005122-001: Entry-level single-frequency module replaceable by LAM 796-009364-001; limited to 0–2000 W, used in LAM 500 Series lab tools.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 796-009364-001, confirm compatibility with your LAM tool (790 Series/legacy 2300) and select the appropriate RF output (CPR-142 for modern feedthroughs, SMA for legacy). Mount the 2U module in a 19” legacy tool rack using included anti-vibration pads, ensuring ≥10cm clearance from heat sources (e.g., backing pumps) to maintain operating temp <60°C. Connect RF input (N-type female) to the generator and RF output to the chamber feedthrough—use LAM-approved coaxial cables (max length 4m) to minimize signal loss. For control, connect EtherNet/IP (Cat5e) to LAM PCS v5.8+ and RS-485 to auxiliary sensors. Verify the 110–240 VAC power supply has a dedicated 12A circuit with surge protection; no liquid cooling is required for 2500 W continuous operation.

Maintenance suggestions: Perform bi-weekly visual inspections of LAM 796-009364-001 to check for loose RF connections or dust buildup; clean forced-air filters with compressed air (30 PSI) to prevent overheating. Every 4 months, run the module’s built-in self-calibration tool via LAM PCS to verify matching efficiency and VSWR; recalibrate with LAM 796-009364-CAL if efficiency drops below 94%. Annually, inspect RF components for tarnishing (clean tin-plated contacts with IPA if needed) and test safety shutdowns (overpower/over-temperature). For critical 28nm production lines, keep a spare LAM 796-009364-001 on hand—pre-configure power/matching settings to minimize replacement time (<1.5 hours).

Service and guarantee commitment

LAM Research backs LAM 796-009364-001 with a 2.5-year standard warranty, covering defects in materials and workmanship for 14nm–28nm semiconductor use. This warranty includes free replacement of faulty components (e.g., RF inductors, cooling fans) and 24/7 technical support from LAM’s global legacy systems team, accessible via the LAM Customer Portal or regional account managers. For extended protection, customers can purchase LAM’s Mid-Range RF Support Plan, which extends coverage to 4 years and includes semi-annual on-site calibration, priority technical support (≤4-hour response time), and discounted replacement cables.

All LAM 796-009364-001 units undergo rigorous mid-node testing: 80-hour power cycling (0–2500 W), EMI/EMC compliance checks (per SEMI F47), and matching efficiency verification (NIST-traceable RF meters). LAM also offers legacy tool training (e.g., “RF Matching for LAM 790 Series 28nm Etch”) to help technicians optimize performance. This commitment ensures LAM 796-009364-001 delivers reliable, cost-effective RF control in 24/7 mid-node fabs, minimizing plasma-related defects and extending the value of legacy 14nm–28nm infrastructure.