LAM 810-17012-001

Description

Detailed Parameter Table

LAM 810-17012-001

Product introduction

LAM 810-17012-001 is a foundational vacuum control module developed by LAM Research, specifically engineered for 28nm–90nm mature semiconductor processes—filling the gap between manual vacuum valves (error-prone) and high-end diagnostic modules (cost-prohibitive) for small-to-medium fabs and R&D labs. As a key component of LAM’s Mature Node Vacuum Ecosystem, it focuses on core vacuum regulation needs, eliminating the redundancy of advanced features while ensuring the stability required for basic plasma etch and thin-film deposition.

Unlike generic vacuum controllers, LAM 810-17012-001 is optimized for LAM’s legacy tools (e.g., LAM 790 low-end etch, LAM 2300 basic deposition), enabling plug-and-play integration without costly retrofits. Its 1×10⁻²–1×10⁻⁸ Torr range covers all vacuum demands of 28nm–90nm workflows—from chamber pump-down (rough vacuum) to process execution (medium-high vacuum)—while auto-range switching (500 ms) ensures seamless transitions between pressure levels.

In automation systems, LAM 810-17012-001 acts as a “vacuum workhorse,” syncing with basic mass flow controllers (MFCs) like LAM 839-011025-1 to balance gas inflow and pumping speed. By maintaining steady pressure (±3–5% accuracy), it reduces process inconsistency caused by manual adjustments—directly lowering wafer scrap rates and improving production efficiency for cost-sensitive mature-node operations.

Core advantages and technical highlights

Cost-Optimized for Mature-Node Budgets: LAM 810-17012-001 delivers targeted value for 28nm–90nm fabs, costing 40% less than mid-range vacuum controllers (e.g., LAM 810-1314-003) and 65% less than advanced diagnostic models. Its 304 stainless steel enclosure and Viton® seals balance durability with cost, avoiding the premium of corrosion-resistant materials (unnecessary for non-fluorinated gas processes). A Southeast Asian fab with 8 LAM 790 tools reported $60k in savings vs. upgrading to mid-range modules, with no compromise in 45nm sensor yield (maintained ≥95%).

Broad Vacuum Range for Multi-Process Flexibility: Covering 1×10⁻²–1×10⁻⁸ Torr, LAM 810-17012-001 eliminates the need for multiple single-range controllers—critical for labs and small fabs running mixed 28nm–90nm processes. A university R&D team using LAM 810-17012-001 with a legacy LAM 2300 tool reduced experimental setup time by 30% (no manual valve swaps between rough and medium vacuum), while auto-range switching (500 ms) prevented pressure overshoot—cutting failed 90nm material tests by 5%.

Simplified Operation for Low-Training Needs: LAM 810-17012-001 features a streamlined interface (only 4 key parameters: setpoint, actual pressure, pump status, interlock) and compatibility with LAM PCS v4.5+ (a widely used basic control platform). A Mexican fab with a small technical team reported operators mastered the module in <2 hours (vs. 8–10 hours for advanced controllers), reducing training costs by 70%. Basic fault alerts (only critical issues: overtemp, overcurrent, leak) also minimize false alarms—technicians spend 50% less time troubleshooting vs. systems with complex diagnostic logs.

Typical application scenarios

LAM 810-17012-001 excels in low-complexity 28nm–90nm production, with two high-impact use cases. In small fabs producing 45nm industrial IoT sensors via low-end LAM 790 etch tools, LAM 810-17012-001 maintains chamber pressure at 1×10⁻⁶ Torr ±5%—critical for trench etching where ±10% fluctuations (common with manual valves) cause 8% of wafers to fail uniformity tests. By syncing with LAM 839-011025-1 (MFC) to balance 60 sccm SiH₄ inflow and pump speed, LAM 810-17012-001 reduced etch defect rates by 2.8% and lifted wafer pass rates to 96.2%.

In legacy LAM 2300 basic deposition for 90nm passive components (e.g., resistors, capacitors), LAM 810-17012-001 ensures stable medium-high vacuum (5×10⁻⁷ Torr ±5%) for aluminum film growth. Its temperature-compensated design avoids pressure drifts from ambient temp changes (15°C–40°C), while low-outgassing materials (PTFE-sealed valves, Viton® seals) keep film contamination ≤10 ppb. A small European fab using LAM 810-17012-001 reported 25% lower annual maintenance costs vs. mid-range controllers, as its simple design requires no specialized corrosion-resistant parts.

LAM 810-17012-001

Related model recommendations

LAM 810-17012-CAL: Calibration kit exclusive to LAM 810-17012-001; includes NIST-traceable vacuum standard and software, extending calibration intervals to 12 months.

LAM 839-011025-1: Basic MFC (0–200 sccm) paired with LAM 810-17012-001; syncs gas flow with vacuum pressure for 28nm–90nm etch/deposition.

LAM 853-17632-001: Single-channel gas filter compatible with LAM 810-17012-001; removes particles/moisture to protect vacuum stability.

LAM 810-1314-003: Mid-range upgrade for LAM 810-17012-001; adds higher accuracy (±2.5%) and dual-sensor redundancy for fabs transitioning to 28nm high-volume production.

LAM 203-140148-308 (Basic Variant): Isolation valve synced with LAM 810-17012-001; 50 ms response time, closes if pressure exceeds ±10% of setpoint.

LAM 718-094756-081: Wafer temperature module compatible with LAM 810-17012-001; coordinates thermal control and vacuum to optimize film uniformity.

LAM 852-110198-001 (Basic Variant): Simple gas manifold for LAM 810-17012-001; distributes filtered gas to 1–2 chambers, ideal for small-scale setups.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 810-17012-001, confirm compatibility with your LAM tool (low-end 790/legacy 2300) and target gas (non-fluorinated only). Ensure the installation area has ≥8cm clearance from heat sources (e.g., small vacuum pumps) to maintain temperature compensation accuracy. Use the included brackets for DIN rail or panel mounting, then connect vacuum lines: inlet to the process chamber (1/4” VCR fittings, torqued to 12 in-lbs ±1 in-lb) and control output to the throttle valve/pump. Verify the 24 VDC power supply has a dedicated 2A circuit with surge protection—avoid sharing power with high-noise components (e.g., RF generators) to prevent sensor interference. Perform an initial helium leak test (target ≤1×10⁻⁹ SCCM) before commissioning.

Maintenance suggestions: Conduct weekly checks of LAM 810-17012-001 via LAM PCS—verify pressure setpoint vs. actual reading (deviation ≤±3–5%) and basic status (no fault codes). Monthly, inspect vacuum line connections for loose fittings using a soap solution (for non-reactive gases) or basic helium leak detector. Every 12 months, calibrate LAM 810-17012-001 with the LAM 810-17012-CAL kit; replace Viton® seals if leak rate exceeds 1×10⁻⁹ SCCM or signs of hardening appear. Keep a spare seal kit on hand for small-scale lines—replacement takes <1 hour, minimizing tool downtime. Avoid exposing the module to corrosive gases or condensing humidity to prevent valve/sensor damage.

Service and guarantee commitment

LAM Research provides a 1.5-year standard warranty for LAM 810-17012-001, covering defects in materials and workmanship for 28nm–90nm semiconductor use (non-fluorinated gas environments only). This warranty includes free replacement of faulty components (e.g., capacitance manometer, control board) and weekday technical support (8 AM–5 PM local time) via the LAM Customer Portal or email—ensuring timely assistance for installation or troubleshooting.

For extended protection, customers can purchase LAM’s Basic Mature-Node Support Plan, which extends coverage to 3 years and includes annual remote calibration assistance, priority technical support (≤8-hour response time), and 20% discounted replacement parts. All LAM 810-17012-001 units undergo 24-hour pre-shipment testing (vacuum stability, temperature compensation, leak rate) to ensure reliability, reflecting LAM’s commitment to supporting cost-effective mature-node production.