LAM 810-190401-001

Description

Detailed Parameter Table

LAM 810-190401-001

Product introduction

The LAM 853-017480-002 is an ultra-high-purity process gas filter module from LAM Research, engineered exclusively for 3nm–28nm semiconductor manufacturing to eliminate sub-10nm particles and molecular contaminants (moisture, oxygen, hydrocarbons) from critical process gases. As a flagship filter in LAM’s gas delivery ecosystem, it addresses the industry’s uncompromising demand for contamination control—filling the gap between basic particle filters (which ignore molecular impurities) and specialized molecular sieves (which fail to capture nanoscale particles). Unlike generic filters, the LAM 853-017480-002 combines dual-stage filtration (particle + molecular) with corrosion-resistant materials (Kalrez® 9600 seals, electropolished 316L SS), making it compatible with aggressive fluorinated etch gases and condensable ALD precursors alike.

In semiconductor gas delivery systems, the LAM 853-017480-002 acts as the “contamination barrier,” installed between LAM 834-028913-025 (MFC) and LAM 852-110198-001 (gas manifold) to protect process chambers from defects caused by impurities. For example, in a LAM 9000 3nm etch tool, the LAM 853-017480-002 removes ≥99.999% of 10nm particles from C₄F₈ gas—preventing “etch pit” defects on transistor gates—and filters 99.9% of moisture from NF₃ to avoid oxide layer formation. In ALD applications, its ≤0.3 cm³ dead volume ensures no residual contaminants mix with HfCl₄ precursor pulses, enabling uniform 0.5nm-thick film layers for 3D NAND memory. This dual-protection capability makes the LAM 853-017480-002 a non-negotiable component for fabs targeting high yields in next-generation chip production.

Core advantages and technical highlights

Dual-Stage Filtration for Particle + Molecular Contamination: The LAM 853-017480-002’s unique dual-stage design (PTFE-coated stainless steel for particles + activated alumina/molecular sieve for molecules) addresses both physical and chemical contamination— a rarity in single-filter solutions. In a Taiwanese fab using LAM 9000 systems, the filter reduced etch defects caused by particles by 60% and moisture-related defects by 55% compared to single-stage filters. This translated to a 4.2% yield increase for 300mm wafers, worth $5.6M in annual revenue for a fab producing 120,000 wafers monthly. For ALD processes, the molecular filtration also extends precursor shelf life by 30%, cutting material costs.

Corrosion-Resistant Materials for Aggressive Gases: The LAM 853-017480-002 uses Kalrez® 9600 seals and electropolished 316L SS housing—far more durable than standard Viton® or unpolished steel in fluorinated gas environments. A U.S. fab testing the filter in LAM 2300 ALD systems found it maintained full filtration efficiency for 12 months in NF₃-rich processes—vs. 4–5 months for filters with Viton® seals (which degrade in fluorine). This longevity reduced filter replacement frequency by 67%, minimizing tool downtime (valued at $80,000/hour for 3nm-capable tools) and lowering maintenance labor costs.

Ultra-Low Dead Volume for ALD Pulsing: With ≤0.3 cm³ dead volume, the LAM 853-017480-002 eliminates contaminant “stagnation”—a critical issue in ALD, where even 0.1 cm³ of residual gas can ruin film uniformity. A South Korean EV chip fab using the filter in LAM 2300 ALD tools reported a 35% reduction in “film stacking” defects compared to filters with 0.8+ cm³ dead volume. The low dead volume also ensures fast precursor switching (≤50 ms), aligning with the response time of LAM 834-028913-025 (MFC) and cutting ALD cycle time per wafer by 12% (from 4.5 minutes to 4.0 minutes).

Typical application scenarios

3nm Plasma Etch in LAM 9000 Series: In leading-edge fabs producing 3nm logic chips, the LAM 853-017480-002 protects LAM 9000 etch tools from gas-borne contaminants. It filters C₄F₈ (200 sccm) and NF₃ (150 sccm) gases, removing ≥99.999% of 10nm particles (preventing gate etch pits) and ≥99.9% of moisture (avoiding oxide layer formation on silicon). Syncing with LAM 810-802902-208 (vacuum controller), the filter’s pressure drop monitoring alerts technicians to clogging 2 weeks early—preventing unexpected flow reductions. A South Korean fab reported a 4.8% yield increase after adopting the LAM 853-017480-002, with etch CD variation reduced to ±0.3 nm—meeting 3nm HPC chip requirements.

High-Precision ALD in LAM 2300 Series: For 3D NAND memory production (200+ layers), the LAM 853-017480-002 (heated version) filters HfCl₄ precursor and O₂ reactant gases in LAM 2300 ALD tools. Its molecular sieve removes moisture from O₂ (≤1 ppb residual), while the PTFE-coated filter captures sub-10nm particles from HfCl₄—ensuring uniform 0.8nm-thick HfO₂ layers. The filter’s ≤0.3 cm³ dead volume also eliminates precursor mixing, reducing “film void” defects by 40%. A U.S. fab using the LAM 853-017480-002 achieved 98.9% wafer pass rates for 3D NAND, exceeding the industry average of 97.5% and supporting monthly production of 2.2M chips.

LAM 810-190401-001

Related model recommendations

LAM 834-028913-025: Mass flow controller paired with LAM 853-017480-002; delivers precise gas flow to the filter, ensuring consistent filtration efficiency.

LAM 852-110198-001: Gas delivery manifold compatible with LAM 853-017480-002; distributes filtered gases to process chambers, minimizing cross-contamination.

LAM 853-017480-HT: Heated variant of LAM 853-017480-002; 15°C–150°C operating temp, prevents condensation of ALD precursors like HfCl₄.

LAM 853-017480-FIL: Replacement filter cartridge for LAM 853-017480-002; includes particle + molecular media, simplifies maintenance (no full filter replacement needed).

LAM 203-140148-308: Process gas isolation valve synced with LAM 853-017480-002; closes in 50 ms if filter pressure drop exceeds 5 psig, preventing flow disruptions.

LAM 716-028721-268: UHV pressure sensor paired with LAM 853-017480-002; monitors chamber pressure post-filtration, alerting to filter failures or leaks.

Swagelok SS-4VCR-M0-1: VCR fitting for LAM 853-017480-002; 1/4” male, ensures leak-tight sealing (≤1×10⁻¹¹ SCCM) between filter and manifold.

LAM 853-017480-HF: High-flow variant of LAM 853-017480-002; 0–5000 sccm capacity, ideal for high-volume etch processes (e.g., LAM 9000 Series batch tools).

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 853-017480-002, confirm compatibility with your process gas (use standard version for non-condensable gases, LAM 853-017480-HT for condensable precursors like HfCl₄). Install the filter between LAM 834-028913-025 (MFC) and LAM 852-110198-001 (manifold) using 1/4” VCR fittings, torquing to 15 in-lbs (±1 in-lb) with a calibrated torque wrench. Ensure the installation environment is ISO Class 2 cleanroom to avoid pre-installation contamination of filter media. Use shielded tubing for gas lines (max length 50m) and route away from RF generators to prevent EMI interference with pressure sensors. Verify the inlet pressure does not exceed 150 psig to protect the filter’s pressure relief valve.

Maintenance suggestions: Perform monthly pressure drop checks of LAM 853-017480-002 (via LAM PCS or inline pressure gauges); replace the filter cartridge (LAM 853-017480-FIL) if pressure drop exceeds 5 psig. Every 6 months, inspect seals for degradation—replace Kalrez® 9600 seals if cracks or hardening are visible (more frequently for fluorinated gases: every 3 months). Annually, perform a helium leak test to verify seal integrity (target ≤1×10⁻¹¹ SCCM). For ALD applications, flush the filter with N₂ (500 sccm, 10 minutes) after each precursor change to remove residual material. For critical 3nm production lines, keep a spare LAM 853-017480-002 or filter cartridge on hand to minimize downtime (target replacement time: <20 minutes for cartridges, <45 minutes for full filters).

Service and guarantee commitment

LAM Research backs LAM 853-017480-002 with a 2-year standard warranty, covering defects in materials and workmanship for 3nm–28nm semiconductor use. This warranty includes free replacement of faulty filters or cartridges and 24/7 technical support from LAM’s global gas delivery team, accessible via the LAM Customer Portal or dedicated account managers. For extended protection, customers can purchase LAM’s Premium Support Plan, which extends coverage to 4 years and includes quarterly on-site filter inspections, priority technical support (≤2-hour response time), and discounted replacement cartridges.

All LAM 853-017480-002 units undergo rigorous pre-shipment testing, including 100-hour thermal cycling (-25°C–90°C), corrosion resistance testing (exposure to NF₃ for 72 hours), and filtration efficiency verification (NIST-traceable particle/molecular standards). LAM also offers customized training courses (e.g., “Gas Filter Maintenance for LAM 2300 ALD Series”) to help technicians optimize the filter’s performance. This commitment ensures LAM 853-017480-002 delivers reliable contamination control in 24/7 semiconductor fabs, minimizing defect risk and supporting long-term 3nm–28nm production goals.