LAM 716-020905-001

Description

Detailed Parameter Table

LAM 716-020905-001

Product Introduction

The LAM 716-020905-001 is a mission-critical UHV pressure transducer engineered by LAM Research—an industry pioneer in semiconductor manufacturing equipment—to deliver unmatched pressure measurement precision for advanced plasma-based processes. As a semiconductor-grade capacitance diaphragm gauge (CDG), it solves the industry’s most pressing challenge: maintaining nanoscale process stability in UHV environments. For 5nm–7nm chip manufacturing, even a 0.1×10⁻⁸ Torr pressure deviation can destabilize plasma, cause etch rate drift, or contaminate wafers—risks the LAM 716-020905-001 eliminates with its ±1.5% accuracy.

In semiconductor fabs, the LAM 716-020905-001 acts as the “vacuum nerve center” for LAM’s 9000 Series etch systems. It monitors pressure across every process stage: from pulling UHV (1×10⁻¹⁰ Torr) during pump-down, to stabilizing at 5×10⁻⁸ Torr for oxide etch, to venting to 10 Torr for wafer exchange. It feeds real-time data to the LAM 810-800082-201 vacuum controller, which dynamically adjusts turbomolecular pump (TMP) speed to lock in pressure—for example, reducing TMP RPM by 20% if pressure dips below target, or increasing speed if a minor leak (detected via the sensor) causes a spike. Today, it is a staple in leading fabs worldwide, where its reliability directly translates to higher wafer yields and consistent 5nm chip performance.

Core Advantages and Technical Highlights

1. Industry-Leading UHV Accuracy for Nanoscale Processes

The LAM 716-020905-001 delivers ±1.5% accuracy in the critical UHV range (1×10⁻⁹–1×10⁻³ Torr)—33% more precise than generic CDGs (±2.25% accuracy). This precision is game-changing for 5nm logic chip etching: in a Taiwanese fab using LAM 9000 systems, the sensor reduced “etch depth variation” defects by 29% compared to third-party transducers. For a fab producing 100,000 300mm wafers monthly, this translated to a 3.1% yield increase—worth $3.4M in annual revenue. Its single-crystal silicon diaphragm (with silicon nitride coating) also ensures zero hysteresis, so pressure readings remain consistent even after 10,000+ process cycles.

2. Chemical Resistance for Harsh Semiconductor Gases

Unlike sensors with Viton® or EPDM seals, the LAM 716-020905-001 uses Kalrez® 6375 seals—resistant to aggressive fluorinated etch gases (NF₃, CF₄, C₂F₆) and O₂ plasma cleaning (up to 150°C). A U.S. fab testing the sensor in LAM Coronus® clean systems found it maintained full accuracy for 22,000+ cycles—vs. 9,000 cycles for Viton-sealed sensors (which degrade into particle contaminants). This longevity cut sensor replacement frequency by 59%, reducing maintenance costs and unplanned tool downtime (valued at $60,000/hour for LAM 9000 systems).

3. Fast Response for Dynamic Plasma Transitions

With ≤80 ms response time (≤50 ms in dynamic mode), the LAM 716-020905-001 captures rapid pressure changes during plasma ignition or gas pulse injection—critical for atomic layer deposition (ALD) or deep silicon etching. In a European fab using LAM 2300 systems for 3D NAND memory, the sensor’s fast response let the LAM 810-800082-201 controller adjust TMP speed within 60 ms of a WF₆ precursor gas spike, preventing “tungsten nodule” defects (which short-circuit 3D NAND layers). This precision reduced ALD-related defects by 32%, exceeding the fab’s 25% defect reduction target.

4. Seamless LAM Ecosystem Integration

The LAM 716-020905-001 natively connects to LAM’s PCS and vacuum/power components—no custom wiring or software mapping required. It shares real-time pressure data with the LAM 810-800082-201 controller for closed-loop vacuum control, and alerts the LAM 673-092355-006 (RF feedthrough) diagnostic system if pressure spikes suggest a seal leak. A Korean fab with 30 LAM 9000 systems reported 55% faster setup time vs. generic sensors (1 hour vs. 2.2 hours) and 40% less technician workload for vacuum monitoring—freeing resources for critical tasks like tool calibration.

Typical Application Scenarios

Scenario 1: LAM 9000 Series Etch for 5nm Logic Chips

A top South Korean fab uses LAM 716-020905-001 transducers in 28 LAM 9000 etch systems for 5nm HPC (high-performance computing) chips. Each sensor:

Monitors pressure from 760 Torr (wafer load) to 1×10⁻⁸ Torr (etch process), sending 4–20 mA signals to the LAM 810-800082-201 controller. When pressure hits 1×10⁻⁹ Torr, the controller reduces TMP speed from 95% to 60% to maintain UHV.

Detects micro-leaks (e.g., 0.8×10⁻⁷ Torr pressure rise) from LAM 673-092355-006 feedthrough seals, triggering a plasma purge and alerting technicians—preventing contamination of 300mm wafers (valued at $3,000 each).

Logs pressure data every 40 ms for ISO 9001 compliance, enabling engineers to trace 2.8% of yield gains to tighter pressure control during polysilicon etch.

Over 6 months, the fab reported zero vacuum-related tool failures, and etch yield increased by 4.4%—equivalent to $4.8M in additional revenue.

Scenario 2: LAM 2300 Series ALD for 3D NAND Memory

A U.S. fab deploys LAM 716-020905-001 in LAM 2300 deposition systems for ALD of hafnium oxide (HfO₂) films (critical for 3D NAND dielectrics). The sensor:

Maintains 3×10⁻⁹ Torr UHV with ±0.2×10⁻⁹ Torr stability, syncing with LAM 515-011835-001 (MFC) to time HfCl₄ precursor pulses—ensuring 1nm-thick HfO₂ layers with <1.1% uniformity.

Uses dynamic mode (≤50 ms response) to track pressure spikes from precursor injection, prompting the LAM 810-800082-201 to increase TMP speed by 15%—removing unreacted gas and avoiding film voids.

This setup met 3D NAND’s strict film uniformity requirements (±1.5%) across 15,000 wafers and reduced ALD defects by 29%, supporting the fab’s 1M+ 3D NAND chip monthly production target.

LAM 716-020905-001

Related Model Recommendations

Installation, Commissioning & Maintenance Instructions

Installation Preparation

Compatibility Check: Verify the sensor works with your LAM system (e.g., 9000 Series) via LAM’s Part Cross-Reference Tool.

Cleanroom Setup: Work in ISO Class 2 cleanroom (use cleanroom gloves/coveralls) to avoid diaphragm contamination.

Tool Kit: Gather torque wrench (10 in-lbs for VCR fitting), M12 crimp tool, LAM PCS software, and N₂ purge kit.

Pre-Install Purge: Flush the process port with N₂ (100 sccm for 15 minutes) to remove moisture/air—moisture reacts with fluorinated gases to form corrosive acids.

Mounting: Use the included bracket to panel-mount the sensor; keep ≥10cm from RF generators (13.56 MHz) to avoid EMI interference.

Maintenance Best Practices

Monthly: Run on-board self-calibration via LAM PCS—verify zero-point drift (should be ≤0.05×10⁻¹⁰ Torr). If drift exceeds 0.1×10⁻¹⁰ Torr, use LAM 716-020905-CAL for full calibration.

Quarterly: Inspect the VCR fitting for leaks (helium leak detector, sensitivity ≤1×10⁻¹¹ Torr·L/s); clean the housing with IPA (avoid abrasives).

Annually: Test response time with a pressure step generator—replace if response exceeds 120 ms (dynamic mode).

Emergency Spare: Keep one LAM 716-020905-001 on hand—downtime for sensor replacement costs $50,000+ per hour.