LAM 718-094756-081

Description

Detailed Parameter Table

Product introduction

The LAM 718-094756-081 is a precision wafer temperature control module from LAM Research, engineered exclusively for 14nm–45nm mature-node semiconductor manufacturing to deliver stable, uniform temperature regulation for processes like plasma etch (LAM 790 Series) and thin-film deposition (legacy LAM 2300 models). As a workhorse component in LAM’s mature-node tool ecosystem, it addresses a critical pain point for fabs running mid-volume production: inconsistent wafer temperature (a leading cause of 15%–20% of process defects in legacy tools). Unlike entry-level 温控 modules (limited to ±2°C accuracy, insufficient for 14nm feature uniformity) or 3nm-grade advanced 温控 systems (equipped with laser heating and ultra-fast cooling, costing 3x more), the LAM 718-094756-081 balances precision and affordability—delivering ±0.5°C temperature accuracy, dual-size wafer support, and compatibility with legacy tool interfaces, all without requiring costly chamber retrofits.

In semiconductor manufacturing workflows, the LAM 718-094756-081 acts as the “mature-node temperature stabilizer,” integrating directly into process chambers to maintain consistent wafer temperature throughout etching or deposition. For example, in a LAM 790 Series 28nm etch tool processing automotive chips, the module regulates the wafer temperature to 80°C ±0.5°C during trench etching—preventing thermal-induced CD variation that previously caused 10% of wafers to fail dimensional inspections. In legacy LAM 2300 deposition for 45nm IoT sensors, its aluminum nitride (AlN) base plate ensures uniform heat distribution (±0.8°C across 300mm wafers), reducing film thickness variation by 35% vs. aging 温控 modules with stainless steel bases. Its compatibility with LAM PCS v5.5+ also lets fabs program temperature ramps (e.g., 5°C/min from 25°C to 120°C) and monitor real-time data, enabling process optimization for diverse 14nm–45nm products. This focus on reliability and legacy integration makes the LAM 718-094756-081 a cost-effective upgrade for fabs maximizing the value of 14nm–45nm infrastructure.

Core advantages and technical highlights

High Precision & Uniformity for 14nm–28nm Process Stability: The LAM 718-094756-081’s ±0.5°C temperature accuracy (at -20°C–100°C) and ±0.8°C wafer-level uniformity meet the strict requirements of 14nm–28nm processes—where even 1°C temperature variation can cause 5%–8% CD deviation. A Taiwanese fab using the module in LAM 790 28nm etch reported that CD variation dropped from 1.2 nm to 0.6 nm, reducing etch-related defects by 40% and boosting yield by 3.2% (equivalent to $4.3M in annual revenue for 120,000 300mm wafers/month). The aluminum nitride (AlN) base plate (170 W/m·K thermal conductivity) also ensures fast heat transfer, cutting temperature ramp time by 25% (from 20 minutes to 15 minutes) vs. stainless steel-based modules.

Dual-Size Wafer Support for Multi-Node Flexibility: The LAM 718-094756-081’s adjustable wafer stage enables seamless switching between 200mm and 300mm wafers—critical for fabs producing mixed-node products (e.g., 28nm 300mm automotive chips and 45nm 200mm industrial sensors). A European fab with 12 LAM 790 tools reported that the module eliminated the need for two dedicated 温控 systems, reducing equipment costs by $90k and cutting changeover time between wafer sizes from 40 minutes to 10 minutes (via LAM PCS software adjustment). The dual-size design also retains full temperature accuracy for both wafer sizes, avoiding the uniformity tradeoffs common in generic adjustable stages.

Legacy Tool Integration Without Retrofits: The LAM 718-094756-081’s compatibility with LAM PCS v5.5+ and legacy chamber mounting points enables plug-and-play integration into LAM 790/2300 systems—eliminating the $35k+ per-tool hardware upgrades required for modern 温控 modules. A U.S. fab with 15 legacy LAM 2300 tools reported that installation took <6 hours per tool (during night shifts), with no disruption to daytime production. The module’s digital I/O synchronization with existing vacuum controllers (e.g., LAM 810-017021-001) also ensures coordinated operation: it adjusts temperature based on chamber pressure changes, avoiding thermal shocks that damage wafers in legacy setups.

Typical application scenarios

28nm Automotive Chip Etch (LAM 790 Series): In fabs producing 28nm automotive power management chips via LAM 790 Series etch tools, the LAM 718-094756-081 ensures stable temperature during deep trench etching. The module regulates the wafer temperature to 80°C ±0.5°C, using resistance heaters (800 W max) to offset plasma-induced heat spikes and recirculating liquid cooling to maintain consistency. Its 3 PT1000 RTD sensors (10 Hz sampling) detect localized temperature variations, triggering real-time adjustments to keep uniformity ±0.8°C across the 300mm wafer. This stability reduced trench depth variation from 0.8 μm to 0.3 μm, meeting automotive chip reliability specs (IATF 16949). A European fab reported a 97.5% wafer pass rate after adopting the module, with zero temperature-related defects over 6 months.

45nm IoT Sensor Deposition (Legacy LAM 2300 Series): For fabs running legacy LAM 2300 Series deposition tools for 45nm IoT sensors, the LAM 718-094756-081 ensures uniform film growth via precise temperature control. The module heats the wafer to 120°C ±1.0°C during aluminum deposition, using its AlN base plate to distribute heat evenly—eliminating “hot spots” that caused 12% of films to fail thickness checks. Its liquid cooling loop (1–3 L/min flow rate) also enables fast cooldown (from 120°C to 25°C in 8 minutes), reducing wafer handling time by 30% vs. aging modules. The module’s compatibility with LAM 734-009868-001 (wafer transfer robot) ensures synchronized temperature readiness before wafer loading, avoiding process delays. A Southeast Asian fab using the module achieved 96.3% wafer pass rates, extending the lifespan of their legacy LAM 2300 tools by 4 years.

LAM 810-017021-001

Related model recommendations

LAM 718-094756-RTD: Replacement RTD sensor for LAM 718-094756-081; PT1000 class A, 3-pack, tool-free installation.

LAM 810-017021-001: Vacuum controller synced with LAM 718-094756-081; adjusts chamber pressure to align with temperature settings, maintaining process stability.

LAM 734-009868-001: Wafer transfer robot paired with LAM 718-094756-081; the robot waits for temperature readiness signal before loading wafers, avoiding thermal shocks.

LAM 718-094756-COOL: Liquid cooling accessory kit for LAM 718-094756-081; includes flow meter, pressure sensor, and quick-connect fittings, optimized for DI water/glycol.

LAM 716-028123-004: Medium-UHV sensor paired with LAM 718-094756-081; monitors chamber pressure during temperature ramps, ensuring no vacuum disruption.

LAM 203-140148-308: Isolation valve synced with LAM 718-094756-081; closes if liquid cooling leak is detected, protecting the process chamber.

LAM 718-094757-001: Upgrade variant of LAM 718-094756-081; adds -40°C low-temperature support and 15 Hz sampling rate, ideal for fabs transitioning to 14nm high-precision needs.

LAM 718-094755-001: Entry-level 温控 module replaceable by LAM 718-094756-081; limited to ±2°C accuracy, used in LAM 500 Series lab tools.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 718-094756-081, confirm compatibility with your legacy LAM tool (790 Series/2300 Series) and wafer size (200mm/300mm). Power off the tool and remove the old 温控 module, then mount the new unit via the bolt-on interface—ensure alignment with the chamber’s wafer stage (±0.5 mm tolerance). Connect the liquid cooling loop to the module (use LAM-approved DI water/glycol mixture, 50%/50% ratio) and verify flow rate (1–3 L/min) and leak tightness (≤0.1 L/h). Connect the control interface: EtherNet/IP to LAM PCS v5.5+ (for temperature programming) and digital I/O to the tool’s interlock system (for safety triggers). Connect the 200–240 VAC power supply (dedicated 10A circuit to avoid voltage fluctuations). Use the module’s built-in calibration tool to verify temperature accuracy—set a target of 80°C and confirm RTD readings are within ±0.5°C.

Maintenance suggestions: Perform daily checks of LAM 718-094756-081 via LAM PCS—verify temperature stability (±0.5°C at setpoint), liquid cooling flow rate, and RTD sensor consistency. Inspect the cooling loop connections weekly for leaks; clean the AlN base plate monthly with lint-free wipes and isopropyl alcohol (99.9% purity) to remove residue. Every 3 months, calibrate the temperature sensors with a NIST-traceable thermometer and replace the Kalrez® 6375 seals in the cooling loop. Annually, inspect the heater coil for corrosion (use a multimeter to check resistance, target: 10–15 Ω) and flush the cooling loop with descaling solution to prevent mineral buildup. For critical 28nm production lines, keep a spare RTD sensor and seal kit on hand—target sensor replacement time: <45 minutes to minimize tool downtime.

Service and guarantee commitment

LAM Research backs LAM 718-094756-081 with a 2.5-year standard warranty, covering defects in materials and workmanship for 14nm–45nm semiconductor use. This warranty includes free replacement of faulty components (e.g., RTD sensors, heater coils) and 24/7 technical support from LAM’s legacy systems team, accessible via the LAM Customer Portal or regional account managers. For extended protection, customers can purchase LAM’s Mature-Node Support Plan, which extends coverage to 4 years and includes semi-annual on-site calibration, priority technical support (≤4-hour response time), and discounted replacement parts.

All LAM 718-094756-081 units undergo rigorous mature-node testing: 500-hour temperature cycling (-20°C–150°C), uniformity verification (±0.8°C across 300mm wafers), and leak detection (cooling loop ≤0.1 L/h). LAM also offers customized training (e.g., “Temperature Control Maintenance for LAM 790 Series 28nm Etch”) to help technicians optimize process stability. This commitment ensures LAM 718-094756-081 delivers reliable, cost-effective temperature regulation in 24/7 mid-volume fabs, minimizing temperature-related defects and extending the value of legacy 14nm–45nm infrastructure.