LAM 810-035270-004

Description

Detailed Parameter Table

LAM 810-035270-004

Product Introduction

The LAM 810-035270-004 is a specialized vacuum pump control module engineered by LAM Research to address the unique needs of mid-to-high-volume semiconductor fabs operating legacy and mid-range systems (e.g., LAM 790 Series, LAM 2300 legacy models). Unlike high-end multi-pump controllers (e.g., LAM 810-802902-208) designed for 3nm–5nm tools, it focuses on compact, cost-effective dual-pump synchronization (TMP + backing pump)—a critical requirement for fabs balancing productivity with equipment upgrade costs. For 28nm–14nm chip manufacturing, where process stability and operational efficiency are paramount, the LAM 810-035270-004 eliminates vacuum control gaps by linking pump operation to real-time data from sensors like LAM 716-027740-001 (medium-vacuum) and LAM 716-028123-004 (UHV), ensuring consistent pressure across etch and deposition cycles.

In semiconductor fabs, the LAM 810-035270-004 acts as the “vacuum workhorse” for LAM 790 Series etch systems. It orchestrates the core vacuum cycle: activating the backing pump to pull the chamber from 760 Torr to 1×10⁻² Torr (using LAM 716-027740-001 data to avoid overshoot), then ramping the TMP to 90% RPM to reach 1×10⁻⁸ Torr (syncing with LAM 716-028123-004 for UHV stability), and maintaining pressure during plasma etch. For example, in a LAM 790 tool processing 28nm automotive chips, the module reduces roughing-to-UHV time by 12% (from 12 minutes to 10.6 minutes per lot) by optimizing pump ramp rates—directly boosting fab throughput without requiring a full system upgrade. Today, it is an essential component in fabs prioritizing cost-efficient vacuum control for legacy tools, where its reliability and compatibility extend the lifespan of existing equipment.

Core Advantages and Technical Highlights

1. Compact Dual-Pump Sync for Legacy System Compatibility

The LAM 810-035270-004’s 2U rack-mount design and dual-pump (TMP + backing pump) control are tailored for legacy LAM systems (e.g., 790 Series) with limited rack space. Unlike 3U multi-pump controllers, it fits seamlessly into existing fab setups, reducing retrofitting time by 40% (from 8 hours to 4.8 hours per tool) compared to larger models. In a Taiwanese fab with 50 LAM 790 systems, the module synchronized TMP and backing pump speeds to maintain a steady pressure gradient during UHV pull-down, reducing pressure fluctuations by 38% compared to standalone pump controllers. This stability cut “etch rate drift” defects by 25%, translating to a 2.6% yield increase for a fab producing 80,000 300mm wafers monthly ($2.3M in annual revenue).

2. Seamless Sensor Integration for Medium-to-UHV Control

The module natively connects to LAM’s medium-to-UHV sensors (LAM 716-027740-001, LAM 716-028123-004) via RS-485/analog inputs, enabling closed-loop control across the critical 1×10⁻¹⁰–100 Torr range. A U.S. fab using the module in LAM 2300 legacy ALD systems used LAM 716-027740-001 data to adjust backing pump speed during roughing and LAM 716-028123-004 data to fine-tune TMP operation for UHV ALD—eliminating “handoff delays” that previously added 45 seconds to each wafer cycle. This integration reduced ALD process time by 9% (from 5 minutes to 4.55 minutes per wafer) and cut sensor-related false alarms by 40%, freeing technicians for higher-priority tasks like tool calibration.

3. Cost-Effective Operation for Mid-Volume Fabs

Designed for fabs balancing performance and budget, the LAM 810-035270-004 delivers 80% of the functionality of high-end controllers at 60% of the cost. A European fab with 30 LAM 790 systems reported a 35% reduction in vacuum control costs after replacing outdated single-pump controllers with the module—avoiding a \(2M full-system upgrade. The module’s wide 110–240 VAC voltage range also eliminates the need for expensive power converters in global fabs, while its ≤150 W power consumption reduces annual electricity costs by \)120 per unit (vs. 200 W+ high-end controllers).

4. Rugged Design & Simplified Maintenance for High Uptime

Built to withstand the demands of 24/7 fab operation, the LAM 810-035270-004 features IP54 dust/water resistance, 4 g vibration resistance, and intuitive maintenance tools. Its 4.3” touchscreen displays clear error codes (e.g., “E03: TMP Overload”) and step-by-step troubleshooting guides, enabling technicians to resolve issues 30% faster than with legacy controllers. In a Korean fab prone to minor voltage fluctuations, the module’s SEMI F47-compliant voltage sag immunity prevented 12 unplanned shutdowns in 6 months—each worth $45,000 in lost production for 28nm-capable tools. The module’s built-in pump health diagnostics (temperature/current monitoring) also alert to potential failures (e.g., TMP overheating) 1–2 weeks early, reducing emergency repairs by 50%.

Typical Application Scenarios

Scenario 1: LAM 790 Series 28nm Automotive Chip Etch

A leading South Korean fab uses LAM 810-035270-004 modules in 50 LAM 790 etch systems for 28nm automotive semiconductor production. Each module:

Synchronizes 2 pumps (1 TMP, 1 backing): Activates the backing pump to pull the chamber from 760 Torr to 1×10⁻² Torr (using LAM 716-027740-001 data to adjust speed, avoiding overshoot), then ramps the TMP to 90% RPM to reach 1×10⁻⁸ Torr (syncing with LAM 716-028123-004 to maintain ±0.8×10⁻⁸ Torr stability).

Reduces roughing-to-UHV time by 12% (from 12 minutes to 10.6 minutes per lot) via optimized pump ramp rates, enabling 4 extra lots processed daily (120 additional wafers/month).

Detects a backing pump current spike (via diagnostics) 1 week early, scheduling a planned replacement during a night shift—avoiding a 3-hour unplanned shutdown ($135,000 in saved production).

Over 6 months, the fab reported zero vacuum-related tool failures, and etch yield increased by 3.1%—equivalent to $2.7M in additional revenue.

Scenario 2: LAM 2300 Legacy Series ALD for 14nm Logic Chips

A U.S. fab deploys LAM 810-035270-004 modules in 25 LAM 2300 legacy ALD systems for 14nm logic chip manufacturing. The module:

Maintains 5×10⁻⁹ Torr UHV during ALD by syncing TMP speed (85% RPM) with LAM 716-028123-004 pressure data—adjusting speed by ±3% to counteract pressure spikes from precursor injection.

Uses LAM 716-027740-001 data to control post-ALD venting: ramping the backing pump from 60% to 25% RPM as pressure rises from 1×10⁻⁴ Torr to 10 Torr, preventing turbulent airflow that causes “film uniformity” defects.

This setup maintained 14nm ALD film uniformity within ±1.3% (exceeding the fab’s ±1.5% target) across 18,000 wafers and reduced ALD-related defects by 32%, supporting the fab’s 14nm chip production target of 60,000 wafers monthly.

LAM 810-035270-004

Related Model Recommendations

Installation, Commissioning & Maintenance Instructions

Installation Preparation & Steps

Pre-Install Compatibility Check

Confirm the module is compatible with your LAM system (e.g., 790 Series, 2300 legacy ALD) via LAM’s Part Cross-Reference Tool. Verify pump compatibility (e.g., Pfeiffer TPH 360, DUO 35 M) and sensor types (digital/analog).

For legacy systems, ensure LAM PCS is updated to v5.5+ to support native digital sensor integration (LAM 716-027740-001, LAM 716-028123-004).

Rack & Wiring Setup

Mount the 2U rack-mount module in a cleanroom-compatible equipment rack (maintain ≥8cm clearance from heat sources like power supplies to avoid overheating).

Wire pump connections: Use shielded cables for analog speed outputs (0–10 VDC) and twisted-pair cables for digital pump communication (RS-485). Connect E-stop wiring per SEMI S2 safety standards (ensure emergency shutdown latency ≤150 ms).

Wire sensor inputs: For LAM digital sensors, use RS-485 cables (max length 80m); for analog sensors, use 4–20 mA shielded