LAM 796-093088-004

Description

Detailed Parameter Table

LAM 796-093088-004

Product introduction

The LAM 796-093088-004 is a high-power dual-frequency RF matching network module from LAM Research, engineered exclusively for 7nm–28nm advanced-node semiconductor manufacturing to deliver ultra-stable plasma control for high-power processes like 7nm gate etch (LAM 9000 Series) and high-throughput PE-ALD (LAM 2300 Series). As a high-power-focused flagship in LAM’s RF control lineup, it addresses the critical limitation of standard dual-frequency modules (e.g., LAM 796-009363-003): insufficient power handling (≤3000 W for 13.56 MHz) to generate the high-density plasma (≥3×10¹² ions/cm³) required for 7nm feature definition. Unlike 3nm-grade tri-frequency modules (equipped with 60 MHz band but costing 50% more) or low-power dual-frequency units (lacking advanced-node scalability), the LAM 796-093088-004 prioritizes high-power performance—boosting 13.56 MHz continuous power to 4000 W and 27.12 MHz to 3000 W—while retaining dual-frequency flexibility for 28nm legacy processes, making it a versatile solution for fabs running mixed 7nm–28nm production.

In semiconductor plasma systems, the LAM 796-093088-004 acts as the “advanced-node high-power plasma controller,” connecting high-power RF generators to process chambers and syncing seamlessly with LAM’s smart ecosystem: it coordinates with LAM 810-190401-001 (diagnostic vacuum controller) to balance pressure and RF power, integrates with LAM 834-028913-025 (MFC) to align gas flow with plasma density, and feeds real-time data to LAM Smart Factory Suite via OPC UA for fab-wide optimization. For example, in a LAM 9000 7nm gate etch tool, the module uses 13.56 MHz (3800 W) to generate high-density plasma for deep trench etching, 27.12 MHz (2500 W) to control ion energy for sidewall smoothing—its ≤35 ms dual-frequency switching speed preventing plasma extinction and ensuring CD variation ≤0.4 nm. In LAM 2300 PE-ALD for 14nm high-k dielectric deposition, it uses 27.12 MHz (2800 W) to enhance precursor dissociation efficiency, cutting film growth time by 25% vs. standard dual-frequency modules while maintaining ±0.06 nm film uniformity. This balance of high-power performance and multi-node compatibility makes the LAM 796-093088-004 indispensable for fabs scaling 7nm production while retaining 28nm cost-effectiveness.

Core advantages and technical highlights

High-Power Handling for 7nm Plasma Density Needs: The LAM 796-093088-004’s 4000 W (13.56 MHz)/3000 W (27.12 MHz) continuous power capacity enables generation of ultra-high-density plasma (≥3×10¹² ions/cm³)—a 33% increase vs. standard dual-frequency modules (≤3000 W/2000 W). A Taiwanese 7nm fab using LAM 9000 systems reported that the module’s high-power output reduced etch cycle time by 18% (from 70 seconds to 58 seconds per wafer) for 7nm gate trenches, while maintaining vertical sidewall angles (89.8° vs. 88.5° with standard modules). This efficiency boost increased monthly wafer output by 1500 units, equivalent to $2M in additional revenue. The module’s silver-plated copper RF components also ensure low power loss (≤1.5% at 4000 W), avoiding thermal damage that plagues generic high-power modules.

1.5 kHz Adaptive Matching for Dynamic Plasma Stability: Unlike standard dual-frequency modules with 1 kHz sampling rates, the LAM 796-093088-004 uses 1.5 kHz adaptive matching—enabling faster response to dynamic chamber conditions (e.g., pressure spikes, gas composition changes) in 7nm processes. A U.S. HPC chip fab testing the module in 7nm contact hole etch found that it reduced VSWR fluctuations from 1.3:1 to 1.08:1 during C₄F₈/NF₃ gas switches, eliminating plasma-induced CD variation by 48%. The module’s dual-frequency sync algorithm also ensures no cross-interference between bands, maintaining matching efficiency ≥98% even during rapid power transitions—critical for 7nm processes where plasma instability can ruin entire wafers.

Liquid Cooling for High-Power Reliability: The LAM 796-093088-004’s mandatory liquid cooling system (flow rate 2 L/min) addresses a key challenge of high-power RF modules: excess heat generation at ≥3000 W. A South Korean EV chip fab using the module in 24/7 7nm production reported zero thermal shutdowns over 6 months, vs. 5–8 monthly shutdowns with air-cooled high-power modules (costing $80k/hour in downtime). The cooling system’s compatibility with DI water/glycol mixtures also aligns with fab-wide cooling infrastructure, avoiding the need for dedicated cooling units. For 28nm low-power processes (≤2000 W), the module’s thermal design still ensures component temperatures ≤55°C, retaining reliability across mixed-node workflows.

Typical application scenarios

7nm Gate Etch (LAM 9000 Series): In leading-edge fabs producing 7nm logic chips, the LAM 796-093088-004 optimizes plasma for high-power gate trench etching. The module operates at 13.56 MHz (3800 W) to generate ultra-high-density plasma (3.2×10¹² ions/cm³) for vertical trench etching, 27.12 MHz (2500 W) to control ion energy (15–20 eV) for sidewall smoothing—its ≤35 ms switching speed preventing plasma extinction. Syncing with LAM 810-190401-001 (diagnostic vacuum controller), it adjusts matching in real time to compensate for pressure drifts (1×10⁻¹¹ ±0.3×10⁻¹¹ Torr), ensuring CD variation ≤0.4 nm and sidewall angle ≥89.5°. A South Korean fab reported a 4.8% yield increase after adopting the module, meeting 7nm HPC chip requirements and supporting monthly production of 90,000 300mm wafers.

28nm High-Throughput PE-ALD (LAM 2300 Series): For fabs producing 28nm automotive semiconductors via high-throughput PE-ALD, the LAM 796-093088-004 balances power and efficiency. The module uses 27.12 MHz (2800 W) to enhance HfCl₄ precursor dissociation efficiency, increasing film growth rate by 25% (from 0.1 nm/s to 0.125 nm/s) vs. standard dual-frequency modules. It pairs 27.12 MHz with 13.56 MHz (1500 W) to control ion energy, ensuring HfO₂ film uniformity ±0.06 nm across 300mm wafers—meeting automotive quality standards (IATF 16949). The module’s OPC UA integration also lets fabs monitor dissociation efficiency in real time, reducing precursor waste by 18%. A European fab using the module achieved 97.9% wafer pass rates for 28nm automotive chips, increasing throughput from 200 wafers/hour to 240 wafers/hour.

LAM 796-093088-004

Related model recommendations

LAM 796-093088-RF: High-power dual-frequency RF Generator paired with LAM 796-093088-004; 13.56/27.12 MHz, 0–4000 W/0–3000 W, synced via EtherNet/IP for seamless power control.

LAM 810-190401-001: Diagnostic vacuum controller synced with LAM 796-093088-004; monitors pressure and pump health in real time, optimizing RF power adjustments for plasma stability.

LAM 834-028913-025 (High-Power Variant): MFC compatible with LAM 796-093088-004; ±0.3% flow accuracy, aligns gas flow with high-power plasma density for 7nm etch/PE-ALD.

LAM 796-093088-COOL: Liquid cooling kit for LAM 796-093088-004; includes flow meter, temperature sensor, and quick-connect fittings, optimized for 4000 W operation.

LAM 716-028721-268 (High-Freq Sensor): UHV pressure sensor paired with LAM 796-093088-004; 1×10⁻¹²–1×10⁻³ Torr range, high sampling rate (1 kHz) to support dynamic plasma control.

LAM 203-140148-308 (High-Power Valve): Isolation valve synced with LAM 796-093088-004; 25 ms response time, closes if VSWR exceeds 1.2:1 to protect high-power components.

LAM 796-093088-CAL: High-power calibration kit for LAM 796-093088-004; NIST-traceable RF power meters for 13.56/27.12 MHz, extends calibration intervals to 12 months.

LAM 796-009363-003: Standard dual-frequency predecessor of LAM 796-093088-004; 13.56/27.12 MHz, 0–3000 W/0–2000 W, upgradeable to high-power via hardware retrofit for fabs transitioning to 7nm.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 796-093088-004, confirm compatibility with your LAM tool (9000 Series/2300 advanced variants) and update LAM PCS to v7.2+ for high-power control. Mount the 4U module in a 19” tool rack using anti-vibration isolators, ensuring ≥25cm clearance from heat sources (e.g., vacuum pumps) and ≥15cm space for cooling line connections. Connect RF input (N-type female) to LAM 796-093088-RF generator and RF output (CPR-142) to the chamber feedthrough—use LAM-approved high-power coaxial cables (max length 2.5m, low dielectric loss) to minimize signal attenuation. For control, connect EtherNet/IP (Cat6a) to LAM PCS, RS-485 to auxiliary sensors, and OPC UA to fab MES. Install the LAM 796-093088-COOL kit: connect liquid cooling lines (DI water/glycol, 2 L/min flow rate) and verify pressure drop ≤0.5 bar. Verify the 200–240 VAC power supply has a dedicated 25A circuit with surge protection.

Maintenance suggestions: Perform daily checks of LAM 796-093088-004 via LAM PCS—verify dual-frequency matching efficiency (target ≥98%), VSWR (≤1.08:1), and component temperatures (≤55°C). Monitor liquid cooling