LAM 713-071681-009

UHV Sealing for Contamination-Free Processes: The LAM 713-071681-009’s electropolished 316L stainless steel CF flanges and PTFE seats achieve ≤1×10⁻⁸ Torr vacuum and ≤1×10⁻¹² Torr·L/s outgassing—100x better than standard vacuum valves. In a Taiwanese fab using LAM 9000 etch systems, the LAM 713-071681-009 reduced vacuum-related defects (e.g., particle contamination from outgassing) by 22% compared to third-party valves (which had 1×10⁻⁶ Torr outgassing). This improvement translated to a 2.8% increase in wafer yield—worth $3.1M annually for a fab producing 100,000 300mm wafers per month.

Fail-Safe Interlock for Operational Safety: The valve’s integral pressure switch and compatibility with LAM’s Safety Interlock System (SIS) create a dual-layer safety net. If chamber pressure exceeds 10 Torr (e.g., due to a leaky gas valve), the LAM 713-071681-009 immediately closes and sends a shutdown signal to the LAM system—preventing plasma arcing or wafer damage. A U.S. fab reported that the valve’s interlock function avoided 3 potential chamber failures in 6 months, each of which would have cost $250,000+ in repairs and downtime. The manual override lever also ensures emergency access to the chamber (e.g., for wafer retrieval) without compromising vacuum integrity.

Chemical Resistance to Harsh Fab Environments: The LAM 713-071681-009’s wetted materials (electropolished 316L stainless steel, PTFE, Viton®) withstand aggressive fluorinated gases and O₂ plasma cleaning—common in etch processes. A European fab testing the valve in a LAM Coronus® clean system found it maintained UHV performance for 15,000+ cleaning cycles (vs. 8,000 cycles for valves with EPDM seals), which degraded due to plasma attack. This longevity cut valve replacement frequency by 47%, reducing maintenance costs and fab downtime.

Fast Actuation for Process Stability: With actuation times of ≤2 seconds (open) and ≤1.5 seconds (close), the LAM 713-071681-009 minimizes vacuum transients during process transitions (e.g., wafer load/unload). In a LAM 2300 deposition system processing tungsten interconnects, the valve’s fast closing prevented pressure spikes (>5 Torr) that would have caused “voids” in the tungsten film. This precision reduced film defect rates by 18%, ensuring compliance with automotive semiconductor quality standards (IATF 16949).

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Part number: LAM 713-071681-009
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Description

Detailed Parameter Table

Parameter Name Parameter Value
Product model LAM 713-071681-009
Manufacturer LAM Research Corporation
Product category Ultra-High Vacuum (UHV) Interlock Valve for Semiconductor Etch/Deposition Systems
Valve Type 2-way normally closed (NC) gate valve; Pneumatically actuated with manual override
Vacuum Rating Operating pressure: ≤1×10⁻⁸ Torr (UHV); Outgassing rate: ≤1×10⁻¹² Torr·L/s (helium, at 25°C)
Actuation Specifications Pneumatic supply: 80–120 psig (5.5–8.3 bar); Actuation time: Open ≤ 2 seconds, Close ≤ 1.5 seconds
Chemical Compatibility Resistant to fluorinated etch gases (NF₃, CF₄, C₂F₆), cleaning agents (O₂ plasma), and inert gases (N₂, Ar); Wetted materials: 316L stainless steel (electropolished), PTFE (seat), Viton® (seals)
Interlock Functionality Integral pressure switch (0–10 Torr range) for vacuum interlock; triggers system shutdown if pressure exceeds threshold; compatible with LAM’s Safety Interlock System (SIS)
Operating Temperature Range 10°C–60°C (50°F–140°F); Storage: -20°C–80°C (-4°F–176°F)
Environmental Ratings IP54 (dust/water resistance); Cleanroom compatibility: ISO Class 3 (per ISO 14644-1); Vibration resistance: 10 g (10–2000 Hz)
Connection Type Inlet/outlet: 2.5” ConFlat (CF) flange (316L stainless steel, electropolished); Bolted connection (8×M8 bolts)
Compliance Standards SEMI S2 (safety for semiconductor equipment), SEMI F47 (voltage sag immunity), RoHS 3.0, CE, MIL-STD-883H (environmental stress testing)
Physical Dimensions 8.2” × 6.5” × 4.3” (L×W×H); Mounting: Flange-mounted (compatible with LAM chamber flanges); Weight: 12.5 lbs (5.7 kg)
Compatible LAM Systems LAM 9000 Series Plasma Etch Systems, LAM 2300 Series Deposition Systems, LAM Coronus® Plasma Clean Systems
Safety Features Manual override lever (for emergency operation); Pressure relief valve (prevents over-pressurization); Visual position indicator (open/closed status)
LAM 713-071681-009

LAM 713-071681-009

Product Introduction

The LAM 713-071681-009 is a critical ultra-high vacuum (UHV) interlock valve engineered by LAM Research—an industry leader in semiconductor manufacturing equipment—specifically to protect plasma chambers and wafers in advanced etch and deposition systems. As a pneumatically actuated gate valve with integral safety interlocks, it addresses the semiconductor industry’s critical need for UHV sealing and fail-safe operation: plasma processes require stable UHV environments (≤1×10⁻⁸ Torr) to prevent gas contamination, and even minor pressure spikes can ruin 300mm wafers or damage expensive chamber components.

In semiconductor fabs, the LAM 713-071681-009 acts as a “vacuum guardian” for LAM’s 9000 Series etch systems and 2300 Series deposition systems. It isolates the plasma chamber from upstream/downstream vacuum lines, maintaining UHV integrity during process cycles, and triggers an immediate system shutdown if pressure exceeds safe thresholds (via its integral pressure switch). For example, in a LAM 9000 etch tool processing 5nm logic chips, the LAM 713-071681-009 closes within 1.5 seconds if chamber pressure rises above 10 Torr—preventing plasma extinction or wafer contamination. Today, it remains an essential component in leading fabs worldwide, where vacuum stability and safety directly impact process yield and equipment longevity.

Core Advantages and Technical Highlights

UHV Sealing for Contamination-Free Processes: The LAM 713-071681-009’s electropolished 316L stainless steel CF flanges and PTFE seats achieve ≤1×10⁻⁸ Torr vacuum and ≤1×10⁻¹² Torr·L/s outgassing—100x better than standard vacuum valves. In a Taiwanese fab using LAM 9000 etch systems, the LAM 713-071681-009 reduced vacuum-related defects (e.g., particle contamination from outgassing) by 22% compared to third-party valves (which had 1×10⁻⁶ Torr outgassing). This improvement translated to a 2.8% increase in wafer yield—worth $3.1M annually for a fab producing 100,000 300mm wafers per month.

Fail-Safe Interlock for Operational Safety: The valve’s integral pressure switch and compatibility with LAM’s Safety Interlock System (SIS) create a dual-layer safety net. If chamber pressure exceeds 10 Torr (e.g., due to a leaky gas valve), the LAM 713-071681-009 immediately closes and sends a shutdown signal to the LAM system—preventing plasma arcing or wafer damage. A U.S. fab reported that the valve’s interlock function avoided 3 potential chamber failures in 6 months, each of which would have cost $250,000+ in repairs and downtime. The manual override lever also ensures emergency access to the chamber (e.g., for wafer retrieval) without compromising vacuum integrity.

Chemical Resistance to Harsh Fab Environments: The LAM 713-071681-009’s wetted materials (electropolished 316L stainless steel, PTFE, Viton®) withstand aggressive fluorinated gases and O₂ plasma cleaning—common in etch processes. A European fab testing the valve in a LAM Coronus® clean system found it maintained UHV performance for 15,000+ cleaning cycles (vs. 8,000 cycles for valves with EPDM seals), which degraded due to plasma attack. This longevity cut valve replacement frequency by 47%, reducing maintenance costs and fab downtime.

Fast Actuation for Process Stability: With actuation times of ≤2 seconds (open) and ≤1.5 seconds (close), the LAM 713-071681-009 minimizes vacuum transients during process transitions (e.g., wafer load/unload). In a LAM 2300 deposition system processing tungsten interconnects, the valve’s fast closing prevented pressure spikes (>5 Torr) that would have caused “voids” in the tungsten film. This precision reduced film defect rates by 18%, ensuring compliance with automotive semiconductor quality standards (IATF 16949).

Typical Application Scenarios

LAM 9000 Series Etch for 5nm Logic Chips

A leading semiconductor fab in South Korea uses LAM 713-071681-009 valves in 28 LAM 9000 etch systems processing 5nm logic chips for high-performance computing (HPC) applications. Each system has two LAM 713-071681-009 units:

One valve isolates the plasma chamber from the turbomolecular pump, maintaining ≤1×10⁻⁸ Torr during etch cycles. Its integral pressure switch triggers a shutdown if pressure rises above 5 Torr (critical for 5nm feature integrity).

The second valve controls access to the load lock, closing within 1.5 seconds during wafer transfer to prevent air ingress.

Over 6 months, the fab reported zero vacuum-related tool failures, and etch process yield increased by 4.1%—equivalent to $4.5M in additional revenue from 300mm wafers. The valve’s chemical resistance also reduced maintenance time by 35% (from 12 hours/month to 7.8 hours/month).

LAM 2300 Series Deposition for 3D NAND Memory

A U.S. fab uses LAM 713-071681-009 valves in LAM 2300 deposition systems for 3D NAND memory chip manufacturing. The valve:

Isolates the deposition chamber from the gas delivery system, ensuring UHV conditions (≤1×10⁻⁸ Torr) for atomic layer deposition (ALD) of oxide films.

Works with LAM 515-025756-001 (process gas MFC) to synchronize gas flow and vacuum control—preventing film thickness variations caused by pressure fluctuations.

The valve’s visual position indicator and interlock function simplified operator training and compliance with SEMI S2 safety standards. Over 12 months, the fab reduced deposition-related defects by 25%, meeting the strict yield targets for 3D NAND production.

LAM 713-071681-009

LAM 713-071681-009

Related Model Recommendations

LAM 713-071681-010: High-Temp Variant. Operating temp: -5°C–80°C (vs. 10°C–60°C for LAM 713-071681-009)—upgrade for LAM systems in high-heat processes (e.g., rapid thermal deposition), retains UHV rating (≤1×10⁻⁸ Torr).

LAM 713-071681-008: Low-Vacuum Variant. Operating pressure: 1×10⁻³–1 Torr—cost-effective alternative for LAM load lock systems (non-process chambers), lacks UHV sealing but retains interlock functionality.

LAM 9000-04-0005: Vacuum Chamber Kit. Includes LAM 713-071681-009 + turbomolecular pump + pressure gauge—turnkey solution for LAM 9000 etch system maintenance, pre-aligned for plug-and-play installation (reduces setup time by 50%).

Varian TV80: Competitor Vacuum Valve. Alternative for non-LAM systems—offers UHV sealing (≤1×10⁻⁸ Torr) but lacks native integration with LAM’s SIS, requiring custom interlock programming.

LAM 515-025756-001: Process Gas MFC. Paired with LAM 713-071681-009—controls gas flow upstream of the valve in LAM 9000 systems, ensuring gas delivery and vacuum isolation are synchronized (prevents chamber contamination).

LAM 685-016427-001: RF Matching Component. Complementary to LAM 713-071681-009—optimizes RF power delivery to plasma chambers in LAM 9000 systems, ensuring vacuum stability and plasma energy are balanced for consistent etch results.

MKS Instruments 937B: Vacuum Gauge. Accessory for LAM 713-071681-009—monitors UHV levels (≤1×10⁻⁹ Torr) in etch chambers, validates the valve’s sealing performance, critical for fab quality control.

LAM 713-071681-SEAL: Seal Kit. Replacement seals (PTFE seats, Viton® O-rings) for LAM 713-071681-009—extends valve life by 2–3 years, recommended for annual maintenance in fluorinated gas environments.

Installation, Commissioning and Maintenance Instructions

Installation preparation: Before installing LAM 713-071681-009, verify compatibility with the target LAM system (e.g., 9000 Series etch) via LAM’s part cross-reference tool. Work in an ISO Class 3 cleanroom (use cleanroom gloves/covers) to avoid particle contamination of CF flanges. Gather tools: torque wrench (25 N·m for CF flange bolts), pneumatic hose (80–120 psig), helium leak detector (sensitivity ≤1×10⁻¹⁰ Torr·L/s), and LAM’s SIS configuration software. Ensure the chamber and vacuum lines are vented to atmospheric pressure—never install the valve under vacuum (risk of flange damage). Align the valve’s CF flange with the chamber flange to avoid misalignment (causes leaks); use new copper gaskets (LAM part #713-071681-GSKT) for UHV sealing.

Maintenance suggestions: Monthly, perform a helium leak test on LAM 713-071681-009—if leak rate exceeds 1×10⁻⁹ Torr·L/s, replace the PTFE seat (use LAM 713-071681-SEAL kit). Every 6 months, inspect the pneumatic actuator for air leaks (use soapy water on connections) and clean the CF flange surfaces with isopropyl alcohol (avoid abrasive cleaners—scratch electropolished finish). Annually, test the interlock function via LAM’s SIS: simulate a pressure spike (15 Torr) and confirm the valve closes within 1.5 seconds and triggers a system shutdown. For emergency repairs, keep a spare LAM 713-071681-009 on hand—fab downtime for vacuum valve replacement can cost $60,000+ per hour.

Service and Guarantee Commitment

LAM Research backs LAM 713-071681-009 with a 1-year warranty, covering defects in materials (e.g., seal degradation, flange corrosion) and performance (e.g., leak rate >1×10⁻⁹ Torr·L/s, interlock failure). Each valve undergoes 100% factory testing: UHV leak testing (≤1×10⁻¹⁰ Torr·L/s), pneumatic actuation validation, and environmental stress testing (temperature/vibration)—ensuring compliance with LAM’s semiconductor-grade standards.

Our global technical support team (available 24/7) provides guidance on LAM 713-071681-009 installation, SIS integration, and troubleshooting—including multilingual support (English, Mandarin, Korean, Japanese). We offer on-site commissioning and maintenance services (via certified LAM engineers) for critical fab installations, with 48-hour response times in major semiconductor hubs (e.g., Silicon Valley, Hsinchu, Seoul). For urgent replacements, LAM’s regional distribution centers stock LAM 713-071681-009 with cleanroom packaging—minimizing fab downtime. With 40+ years of semiconductor equipment expertise, LAM ensures every LAM 713-071681-009 meets the rigorous demands of advanced chip manufacturing.

 

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