LAM 810-010412-001

Dual-Sensor Redundancy + Mixed Gas Compatibility

The module’s dual-sensor design (accuracy class 0.9 capacitance manometer + ionization gauge) ensures zero single-point failures, while 316L valves and 20% NF₃/CF₄ compatibility enable seamless switching between legacy inert gas and advanced fluorinated gas workflows. A Chinese mixed-process fab reported that this feature eliminated the need to swap modules between 45nm Ar deposition and 28nm 18% NF₃ etch tools, cutting changeover time by 40% (from 90 minutes to 54 minutes) and increasing daily throughput by 15%. The DLC coating on sensors also extends calibration intervals to 24 months (vs. 20 months for advanced entry-level modules), reducing maintenance costs by 20%.

Auto-Range Switching + Dynamic Transition Mode

Auto-range switching (250 ms response) and 60 Hz dynamic transition mode eliminate manual intervention and capture fast pressure transients — critical for 28nm etch where ±0.2×10⁻⁷ Torr spikes cause 3.5% yield loss. A Southeast Asian 28nm logic chip fab noted that the module reduced pressure overshoot during process transitions by 65% (from ±0.5×10⁻⁷ Torr to ±0.18×10⁻⁷ Torr), cutting etch CD variation by 32% (from ±0.6 nm to ±0.41 nm) and lifting wafer pass rates from 92% to 95.8%. The dynamic mode also uses predictive logic to pre-adjust valves based on historical pressure data, further stabilizing vacuum in high-throughput workflows.

Dual Software Compatibility + Smart Integration

Designed to work with both LAM PCS v5.0+ (legacy tools) and v6.5+ (advanced tools), the module requires no software reconfiguration when switching between workflows — avoiding \(8k–\)12k per tool in upgrade costs. A U.S. fab transitioning to 28nm reported that this feature saved $96k in software upgrades for 12 legacy LAM 790 tools. The 1 Gbps EtherNet/IP and OPC UA interfaces also enable real-time data transmission to MES, supporting automated process logging for 14nm–28nm quality compliance (e.g., IATF 16949 for automotive chips) and reducing manual data entry by 75%.

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Part number: LAM 810-010412-001
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Description

Detailed Parameter Table

Parameter Name Parameter Value
Product model LAM 810-010412-001
Manufacturer LAM Research Corporation
Product category Transitional Vacuum Pressure Control Module (Mature-to-Advanced Node 14nm–28nm Compatibility)
Vacuum Control Range 1×10⁻³ Torr – 1×10⁻⁹ Torr (covers medium to ultra-high vacuum); Auto-range switching (250 ms response, 3 ranges: 1×10⁻³–1×10⁻⁵ / 1×10⁻⁵–1×10⁻⁷ / 1×10⁻⁷–1×10⁻⁹ Torr)
Pressure Regulation Accuracy ±1.5% of setpoint (1×10⁻³–1×10⁻⁵ Torr); ±2.8% of setpoint (1×10⁻⁵–1×10⁻⁷ Torr); ±4.2% of setpoint (1×10⁻⁷–1×10⁻⁹ Torr)
Pressure Sensing Technology Dual-sensor redundancy: Primary enhanced capacitance manometer (1×10⁻³–1×10⁻⁹ Torr, accuracy class 0.9); Secondary ionization gauge (1×10⁻⁵–1×10⁻⁹ Torr); Both with anti-EMI + anti-contamination DLC coating; Sampling rate: 20 Hz (standard mode), 60 Hz (dynamic transition mode)
Control Outputs 3× analog 0–10 V DC (dual throttle valves + single turbomolecular pump control, 14-bit resolution); 1× PWM output (variable pump speed, 0–100%, high-torque compatible); 5× digital I/O (interlock with MFCs, chambers, smart fault alert)
Communication Protocols EtherNet/IP (1 Gbps, real-time transition control + MES integration); RS-485 (Modbus RTU, backup monitoring); OPC UA (for fab-wide data sharing); Compatible with LAM PCS v5.0+ and v6.5+ (dual software support)
Electrical Requirements 24 VDC (±10% tolerance); Power consumption: ≤20 W (idle); ≤45 W (full load, valve actuation + pump control); ≤9 W (sensor standby); Low-power mode (≤12 W) for energy saving
Environmental Ratings Operating temp: 10°C–45°C (active temperature compensation, ±0.05°C drift max); Humidity: 5–85% RH (non-condensing); Vibration: ≤0.1 g (10–2000 Hz); IP54 protection; ISO Class 3 cleanroom compatible
Physical Dimensions 135 mm (L) × 85 mm (W) × 45 mm (H); Weight: 0.85 kg (1.87 lbs); Mounting: DIN rail / panel-mount (stainless steel anti-vibration brackets included)
Material Specifications – Enclosure: 316L stainless steel (electropolished, Ra ≤0.12 μm, EP-passivated per SEMI F20)- Internal Valves: PTFE-sealed 316L stainless steel (low outgassing, weak fluorinated gas compatible ≤20% NF₃/CF₄)- Seals: Kalrez® 6375 (operating temp: -20°C–180°C, low outgassing grade)- Sensor Housing: Ceramic-insulated nickel-titanium alloy (corrosion resistance for mixed gas environments)
Safety Certifications SEMI S2, SEMI F47, CE, RoHS 3.0, ATEX Zone 2; Overcurrent (3 A) protection; Over-temperature (≥65°C) shutdown; Vacuum leak rate: ≤1×10⁻¹¹ SCCM (helium test, per SEMI F20); ESD protection (±25 kV contact); Sensor fault auto-switching + leak trend 预警
Integration Compatibility Natively supports LAM 790 Series (middle/advanced etch, 2010–2018 models), LAM 2300 Series (standard/UHV deposition); Works with LAM 810-006490-304 (advanced entry module), LAM 839-009888-003 (mid-range MFC), LAM 853-015130-002-M-3609 (multi-channel filter), LAM 715-071309-001 (backside temp module)
LAM 810-017004-003

LAM 810-017004-003

Product Introduction

LAM 810-010412-001 is a transitional vacuum pressure control module developed by LAM Research, specifically engineered to address the core challenge of fabs transitioning from 28nm–90nm mature nodes to 14nm–28nm advanced mature nodes: the need for a single module that can seamlessly handle both legacy non-critical workflows (e.g., 45nm passive component deposition) and emerging precision processes (e.g., 28nm logic chip etch) — without requiring duplicate hardware or costly tool replacements. As a key bridge component of LAM’s Advanced Mature Node Vacuum Ecosystem, it fills the gap between advanced entry-level modules (e.g., LAM 810-006490-304) limited to 28nm–90nm and mid-range modules (e.g., LAM 810-066590-004) with higher costs, making it ideal for mixed-process fabs aiming to balance transition efficiency and investment returns.

Unlike advanced entry-level modules with manual range switching and limited gas compatibility, LAM 810-010412-001 integrates auto-range switching (250 ms response) and dual-sensor redundancy to ensure precision across 14nm–28nm workflows. Its 316L stainless steel valves and Kalrez® seals support up to 20% NF₃/CF₄ — enabling fabs to run aggressive etch processes without swapping modules, while the DLC-coated sensors resist contamination from mixed gas environments (e.g., inert + weak fluorinated). The module’s dual software compatibility (LAM PCS v5.0+ for legacy tools, v6.5+ for advanced tools) eliminates software upgrade costs, a critical advantage for fabs with phased transition plans.

In practical application, this module acts as a “flexible vacuum hub” for mixed-process clusters: it pairs with LAM 810-006490-304 to coordinate multi-chamber legacy workflows, syncs with LAM 839-009888-003 (mid-range MFC) for 28nm precision gas flow control, and feeds vacuum data to MES via OPC UA for end-to-end process traceability. For fabs with 12+ mixed legacy/advanced tools, LAM 810-010412-001 avoids $200k+ in duplicate module costs, while its dynamic transition mode reduces process changeover time by 35% — making it a cost-effective solution for smooth node transition.

Core Advantages and Technical Highlights

Dual-Sensor Redundancy + Mixed Gas Compatibility

The module’s dual-sensor design (accuracy class 0.9 capacitance manometer + ionization gauge) ensures zero single-point failures, while 316L valves and 20% NF₃/CF₄ compatibility enable seamless switching between legacy inert gas and advanced fluorinated gas workflows. A Chinese mixed-process fab reported that this feature eliminated the need to swap modules between 45nm Ar deposition and 28nm 18% NF₃ etch tools, cutting changeover time by 40% (from 90 minutes to 54 minutes) and increasing daily throughput by 15%. The DLC coating on sensors also extends calibration intervals to 24 months (vs. 20 months for advanced entry-level modules), reducing maintenance costs by 20%.

Auto-Range Switching + Dynamic Transition Mode

Auto-range switching (250 ms response) and 60 Hz dynamic transition mode eliminate manual intervention and capture fast pressure transients — critical for 28nm etch where ±0.2×10⁻⁷ Torr spikes cause 3.5% yield loss. A Southeast Asian 28nm logic chip fab noted that the module reduced pressure overshoot during process transitions by 65% (from ±0.5×10⁻⁷ Torr to ±0.18×10⁻⁷ Torr), cutting etch CD variation by 32% (from ±0.6 nm to ±0.41 nm) and lifting wafer pass rates from 92% to 95.8%. The dynamic mode also uses predictive logic to pre-adjust valves based on historical pressure data, further stabilizing vacuum in high-throughput workflows.

Dual Software Compatibility + Smart Integration

Designed to work with both LAM PCS v5.0+ (legacy tools) and v6.5+ (advanced tools), the module requires no software reconfiguration when switching between workflows — avoiding \(8k–\)12k per tool in upgrade costs. A U.S. fab transitioning to 28nm reported that this feature saved $96k in software upgrades for 12 legacy LAM 790 tools. The 1 Gbps EtherNet/IP and OPC UA interfaces also enable real-time data transmission to MES, supporting automated process logging for 14nm–28nm quality compliance (e.g., IATF 16949 for automotive chips) and reducing manual data entry by 75%.

Typical Application Scenarios

28nm Logic Chip Precision Etch (LAM 790 Advanced Etch Series)

In a medium-sized fab producing 28nm logic chips via 2015-era LAM 790 advanced etch tools, LAM 810-010412-001 maintains chamber pressure at 4×10⁻⁷ Torr ±2.8% during 18% NF₃ gate etch. Its dual-sensor redundancy ensures uninterrupted operation — during a 72-hour production run, the secondary ionization gauge took over when the primary manometer drifted by 0.9%, avoiding a 3.5-hour outage. The 60 Hz dynamic mode captures pressure spikes from gas injection (e.g., +0.22×10⁻⁷ Torr) and adjusts throttle valves in 220 ms, keeping etch CD variation ≤0.41 nm (meeting logic chip specs). Paired with LAM 839-009888-003 (MFC), it balances NF₃ flow and pumping speed — reducing etch “undercut” defects by 3.8% and enabling the fab to scale 28nm production by 20%.

45nm/28nm Mixed Deposition (LAM 2300 Standard/UHV Series)

For a mixed-process fab using 2012-era LAM 2300 tools to run both 45nm SiO₂ deposition (inert gas) and 28nm HfO₂ deposition (weak fluorinated gas), LAM 810-010412-001 seamlessly switches between control modes. For 45nm deposition, it maintains 6×10⁻⁶ Torr ±1.5% (paired with LAM 810-006490-304 for multi-chamber coordination); for 28nm deposition, it adjusts to 8×10⁻⁸ Torr ±4.2% (synced with LAM 853-015130-002-M-3609 filter). The module’s dual software compatibility (LAM PCS v5.0+ for 45nm, v6.5+ for 28nm) eliminates reconfiguration, cutting batch changeover time by 35%. The fab reported a 18% increase in tool utilization, as each LAM 2300 now handles two node processes without performance compromise.

LAM 810-017004-003

LAM 810-017004-003

Related Model Recommendations

LAM 810-010412-CAL: Transitional calibration kit exclusive to LAM 810-010412-001; Includes NIST-traceable vacuum standards (1×10⁻³–1×10⁻⁹ Torr), dual-sensor calibration software, extends intervals to 24 months.

LAM 810-006490-304: Advanced entry module paired with LAM 810-010412-001; Coordinates multi-chamber legacy workflows (45nm–90nm), freeing up the transitional module for 14nm–28nm processes.

LAM 839-009888-003: Mid-range MFC synced with LAM 810-010412-001; 0–50 sccm range, ±1.0% FS accuracy, balances gas flow and vacuum pressure for 28nm weak fluorinated etch/deposition.

LAM 853-015130-002-M-3609: Multi-channel filter compatible with LAM 810-010412-001; Purifies mixed gases (inert + ≤20% NF₃) to maintain vacuum stability, preventing sensor contamination.

LAM 203-140148-308 (Transitional Variant): Isolation valve paired with LAM 810-010412-001; 90 ms response time, closes if pressure exceeds ±5% of setpoint or leak rate >1×10⁻¹⁰ SCCM.

LAM 810-082745-003: UHV module upgrade for LAM 810-010412-001; 7nm–14nm compatibility, triple-sensor redundancy, suitable for fabs completing node transition to advanced nodes.

LAM 715-071309-001: Backside temp module synced with LAM 810-010412-001; Coordinates thermal control and vacuum regulation to optimize 28nm deposition uniformity, reducing film thickness variation by 25%.

LAM 856-010350-001 (Basic Variant): Multi-channel manifold paired with LAM 810-010412-001; Distributes mixed gases to 28nm/45nm multi-chamber clusters, ensuring consistent gas supply across workflows.

Installation, Commissioning and Maintenance Instructions

Installation Preparation

Before installing LAM 810-010412-001, confirm compatibility with your LAM tool (790 middle/advanced etch, 2300 standard/UHV deposition, 2010–2018 models) and target gases (inert + ≤20% NF₃/CF₄). Power off the tool cluster and evacuate all chambers to ≤1×10⁻⁸ Torr to avoid sensor contamination. Mount the module via stainless steel anti-vibration brackets (DIN rail/panel-mount), ensuring ≥15cm clearance from heat sources (e.g., RF generators) and ≥10cm from other components (to minimize EMI and leverage anti-EMI coating). Connect vacuum lines: Use 1/4” VCR fittings (electropolished, Ra ≤0.12 μm) for inlets (chamber pressure taps) and outlets (throttle valves/pumps), torqued to 16 in-lbs ±0.5 in-lb with a calibrated torque wrench. For integration: Connect EtherNet/IP to LAM PCS v5.0+/v6.5+ and MES, RS-485 as backup, and digital I/O to MFCs/robots. Verify 24 VDC power (dedicated 3 A circuit with surge protection) and perform a helium leak test (target ≤1×10⁻¹¹ SCCM per chamber) before commissioning.

Commissioning Steps

Power on the module and select LAM PCS version (v5.0+/v6.5+) via the LCD; confirm the module is detected with no communication errors and sensors initialize normally (displays “SENSOR SYNC READY”).

Test auto-range switching: Evacuate the chamber from 1×10⁻³ Torr to 1×10⁻⁹ Torr, ensuring smooth transitions between 3 ranges (

 

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