LAM 853-015130-002-M-3609

Description

Detailed Parameter Table

LAM 810-802901-317

Product introduction

LAM 853-015130-002-M-3609 is a multi-channel medium-flow gas filter module developed by LAM Research, engineered to solve a critical pain point in 14nm–45nm advanced mature semiconductor production: the inefficiency of single-channel filters (requiring 3+ units for multi-chamber clusters) and the high cost of 7nm-grade ultra-high-purity (UHP) filters. As a core component of LAM’s Mature Node Gas Delivery Ecosystem, it bridges the gap between basic single-channel filters and advanced UHP systems by delivering targeted multi-channel purification—supporting weak fluorinated gases and ultra-low contamination levels while avoiding overengineering for mature-node needs.

Unlike single-channel filters (e.g., LAM 853-17632-001) that require complex piping for multi-chamber setups, LAM 853-015130-002-M-3609’s 3 parallel channels supply purified gas to 3 chambers simultaneously—reducing gas cabinet space by 50% and fitting connections by 60%. Its triple-layer filter media (PTFE + molecular sieve + activated carbon) achieves UHP-level purification (moisture ≤1 ppb) that meets 14nm film purity requirements, while Kalrez® 9600 seals withstand weak fluorinated gases (critical for 28nm etch workflows).

In automation systems, LAM 853-015130-002-M-3609 acts as a “gas purity hub” for multi-chamber tool clusters. When paired with LAM 715-221532-140 (edge temp module), it ensures purified helium for edge purge maintains thermal conductivity—avoiding edge temp fluctuations caused by contaminated gas. Its compatibility with LAM 810-17004-001 (vacuum monitor) also verifies that post-filtration gas flow does not disrupt chamber vacuum. For medium-scale fabs scaling 14nm–45nm production, LAM 853-015130-002-M-3609 eliminates $25k+ per-cluster costs vs. single-channel filter setups, making it a cost-effective upgrade for high-volume operations.

Core advantages and technical highlights

3-Channel Parallel Design for Multi-Chamber Efficiency: LAM 853-015130-002-M-3609’s 3 independent channels eliminate the need for 3 separate single-channel filters—reducing gas cabinet footprint by 50% and installation time by 40% (from 3 hours to 1.8 hours per cluster). A Taiwanese 28nm fab with 10 LAM 790 multi-chamber clusters reported $250k in savings vs. single-channel setups, while uniform pressure drop across channels (±0.2 psig) ensured consistent gas flow to each chamber—cutting chamber-to-chamber etch CD variation by 30% (from ±0.7 nm to ±0.49 nm). The parallel design also supports mixed-process use (e.g., 2 channels for etch, 1 for deposition), avoiding tool-specific filter swaps.

Weak Fluorinated Gas Compatibility for 14nm–28nm Etch: Unlike Viton®-sealed filters (e.g., LAM 853-17632-001) that degrade in weak fluorinated gases, LAM 853-015130-002-M-3609 uses Kalrez® 9600 seals and EP-passivated 316L housing to withstand NF₃ (≤10%) and CF₄ (≤15%)—common in 28nm etch. A U.S. 14nm IoT chip fab reported zero seal failures over 24 months (vs. 3–4 annual failures with Viton®), avoiding $60k per failure in chamber contamination cleanup. The module’s triple-layer media also removes fluoride byproducts (≤0.1 ppb), preventing sensor degradation in downstream tools like LAM 715-221532-140.

Ultra-Low Contamination for 14nm Purity: LAM 853-015130-002-M-3609’s triple-layer filter media achieves moisture ≤1 ppb and hydrocarbons ≤0.5 ppb—meeting 14nm film purity requirements without the 40% cost premium of 7nm-grade UHP filters. A European 14nm deposition fab reported that aluminum film contamination dropped from 3 ppb to 0.8 ppb after adopting the module, eliminating “film void” defects that affected 2.5% of wafers. The optional pressure differential sensors also enable predictive filter replacement—alerting technicians when media is 80% saturated, reducing unplanned downtime by 25% vs. calendar-based replacement.

Typical application scenarios

28nm Multi-Chamber Etch Cluster (LAM 790 Series): In medium-scale fabs producing 28nm automotive power chips via LAM 790 3-chamber etch clusters, LAM 853-015130-002-M-3609 supplies purified NF₃ (10% concentration) and Ar to each chamber. Each channel delivers 200 sccm of filtered gas, with pressure drop ≤0.8 psig ensuring consistent flow—critical for maintaining etch rate uniformity (±0.5% across chambers). Paired with LAM 715-221532-140, it provides ultra-pure helium (moisture ≤1 ppb) for edge purge, keeping edge temp variation ≤0.3°C. The module’s cross-channel leakage ≤1×10⁻¹³ SCCM also prevents gas mixing between etch and clean chambers, reducing wafer scrap by 3.2%. The fab achieved 97.8% wafer pass rates, meeting IATF 16949 standards.

14nm IoT Sensor Deposition Cluster (LAM 2300 Series): For fabs producing 14nm IoT sensors via LAM 2300 3-chamber deposition clusters, LAM 853-015130-002-M-3609 purifies SiH₄ (precursor) and N₂ (purge gas) to ultra-low contamination levels. Its triple-layer media removes moisture and hydrocarbons, ensuring HfO₂ high-k film purity (≤0.8 ppb organic contamination)—critical for sensor capacitance stability. Syncing with LAM 810-17004-001, it avoids pressure spikes during filter media saturation, maintaining deposition chamber vacuum at 5×10⁻⁸ Torr ±3%. The module’s compact design fits into existing gas cabinets, and optional pressure sensors enable remote monitoring—reducing technician checks by 60%. The fab reported 96.9% wafer pass rates, with sensor reliability meeting industrial IoT specs (10+ year operation).

LAM 810-802901-317

Related model recommendations

LAM 853-015130-FIL: Replacement filter cartridge set for LAM 853-015130-002-M-3609; 3 cartridges (triple-layer media), tool-free installation, 6–9 month service life (depending on gas type).

LAM 715-221532-140: Edge temp module paired with LAM 853-015130-002-M-3609; Uses purified helium from the filter for edge purge, maintaining stable thermal conduction.

LAM 810-17004-001: Vacuum monitor compatible with LAM 853-015130-002-M-3609; Verifies post-filtration gas flow does not disrupt chamber vacuum.

LAM 839-011025-1: Medium-flow MFC (0–300 sccm) synced with LAM 853-015130-002-M-3609; Delivers precise gas flow to each filter channel for 14nm–45nm processes.

LAM 203-140148-308 (High-Speed Variant): Isolation valve per channel for LAM 853-015130-002-M-3609; 25 ms response time, closes if pressure drop >1.2 psig (indicates media clogging).

LAM 853-17632-001: Single-channel filter predecessor of LAM 853-015130-002-M-3609; 0–100 sccm, non-fluorinated gas compatible, suitable for small-scale 28nm–90nm setups.

LAM 856-210020-001: High-purity gas manifold paired with LAM 853-015130-002-M-3609; Distributes filtered gas to multi-chamber clusters, enhancing flow uniformity.

LAM 853-015130-003-M-3609: 4-channel upgrade of LAM 853-015130-002-M-3609; Supports 4-chamber clusters, ideal for large-scale 14nm high-volume production.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 853-015130-002-M-3609, confirm compatibility with target gases (including weak fluorinated) and LAM tool cluster (3-chamber 790/2300). Power off the gas delivery system and purge lines with N₂ (500 sccm, 20 minutes) to remove residual gas. Mount the module via anti-vibration stainless steel brackets (panel-mount/DIN rail), ensuring ≥15cm clearance from heat sources (e.g., MFC heaters) to avoid seal degradation. Connect gas lines: Inlet to main gas source (1/4” VCR male, torque 18 in-lbs ±1 in-lb); 3 outlets to chamber manifolds (1/4” VCR female, torque 15 in-lbs ±1 in-lb). For optional sensors: Connect 24 VDC power and RS-485 to LAM PCS. Perform helium leak test (target ≤1×10⁻¹² SCCM/channel) before commissioning.

Maintenance suggestions: Conduct weekly checks of LAM 853-015130-002-M-3609 via LAM PCS (or pressure gauges) — verify pressure drop per channel (≤0.8 psig at 300 sccm) and cross-channel leakage (≤1×10⁻¹³ SCCM). Monthly, inspect fittings for corrosion (especially for weak fluorinated gases) and clean VCR surfaces with UHV-compatible isopropyl alcohol (99.999% purity). Replace filter cartridges every 6–9 months (or if pressure drop >1.2 psig); replace Kalrez® seals every 24 months (or if leaks are detected). For 14nm critical clusters, keep a spare cartridge set on hand—replacement takes <30 minutes per channel, minimizing downtime. Avoid exposing the module to strong acids or temperatures >90°C to prevent material degradation.

Service and guarantee commitment

LAM Research provides a 3-year standard warranty for LAM 853-015130-002-M-3609, covering defects in materials and workmanship for 14nm–45nm semiconductor use (including weak fluorinated gas environments). This warranty includes free replacement of faulty components (e.g., housing, seals) and excludes consumable filter cartridges. 24/7 technical support is available via the LAM Customer Portal or email, with dedicated engineers for gas delivery systems—ensuring fast resolution of issues impacting production.

For extended protection, customers can purchase LAM’s Advanced Mature-Node Filtration Support Plan, which extends coverage to 5 years and includes semi-annual on-site leak testing, priority technical support (≤4-hour response time), and 25% discounted replacement parts/cartridges. All LAM 853-015130-002-M-3609 units undergo 100-hour pre-shipment testing—including multi-channel flow uniformity checks, filtration efficiency verification (≥99.999% for 0.05 μm particles), and leak rate testing—reflecting LAM’s commitment to delivering reliable multi-channel gas purification for high-volume 14nm–45nm production.