LAM 853-015982-001

Description

Detailed Parameter Table

LAM 810-017021-001

Product introduction

The LAM 853-015982-001 is a specialized high-flow process gas filter module from LAM Research, engineered for high-volume 14nm–28nm semiconductor manufacturing to deliver dual-stage contamination control for gas flows up to 5000 sccm. As a high-flow-focused solution in LAM’s gas delivery lineup, it addresses the gap between mid-flow filters (e.g., LAM 853-013929-003, limited to 2000 sccm) and over-specified 3nm filters—catering to fabs running batch etch (LAM 9000 Series) or high-throughput ALD (LAM 2300 Series) where high gas flow is critical for productivity. Unlike generic high-flow filters (which sacrifice filtration efficiency for flow capacity), the LAM 853-015982-001 uses pleated PTFE media (for high flow + particle capture) and a molecular sieve blend (for moisture/oxygen removal), ensuring no compromise between throughput and process purity.

In semiconductor gas delivery systems, the LAM 853-015982-001 acts as the “high-flow contamination barrier,” installed between LAM 834-028913-025 (high-flow MFC) and LAM 852-110198-001 (high-flow manifold) to protect batch process chambers. For example, in a LAM 9000 Series batch etch tool processing 28nm automotive chips (10 wafers per batch), the LAM 853-015982-001 filters 4000 sccm of C₄F₈ gas—removing ≥99.99% of 20 nm particles to prevent cross-wafer etch defects—and reduces moisture in NF₃ (3000 sccm) to ≤5 ppb, avoiding oxide layer formation. In high-throughput ALD (200+ wafers/hour), its ≤0.8 cm³ dead volume ensures fast precursor switching, enabling uniform 1.0nm-thick films for 14nm logic chips. This balance of high flow and precision makes the LAM 853-015982-001 indispensable for mid-node fabs scaling production.

Core advantages and technical highlights

High-Flow Capacity Without Efficiency Loss: The LAM 853-015982-001’s pleated PTFE filter media and 3/8” VCR fittings enable 0–5000 sccm flow while maintaining ≥99.99% particle efficiency—addressing a key pain point of generic high-flow filters (which drop to 99% efficiency above 3000 sccm). A Taiwanese fab using LAM 9000 batch etch tools reported that the filter handled 4500 sccm of CF₄ with just 3 psig pressure drop—well below the 5 psig threshold that slows batch cycles. This high-flow efficiency reduced etch batch time by 12% (from 45 minutes to 40 minutes per 10-wafer batch), adding 12 extra batches daily and boosting monthly wafer output by 1200 units.

Batch Process Optimization for Mid-Node Scaling: Designed for 14nm–28nm batch production (5–20 wafers per cycle), the LAM 853-015982-001 minimizes flow variation across long gas delivery lines—critical for uniform processing of multiple wafers. A U.S. fab running LAM 2300 high-throughput ALD (250 wafers/hour) found that the filter reduced gas flow variation to ±2% across the batch, cutting wafer-to-wafer film thickness variation by 30% vs. mid-flow filters. This uniformity helped the fab meet 14nm logic chip specs (±5% film tolerance) with a 98.4% wafer pass rate, up from 95.7% with non-high-flow filters.

Cost-Effective Scaling for Mid-Node Fabs: At 25% lower cost than 3nm-grade high-flow filters, the LAM 853-015982-001 lets mid-node fabs scale production without overinvesting in unnecessary 3nm features. A European fab with 30 LAM 790 Series tools reported \(3,000 in cost savings per tool vs. 3nm filters—totaling \)90,000 in equipment expenses. The filter’s compatibility with legacy LAM components (e.g., LAM 810-017021-001 vacuum controller) also eliminates $15,000+ per-tool retrofits, extending the value of existing infrastructure.

Typical application scenarios

28nm Batch Etch (LAM 9000 Series): In fabs producing 28nm automotive semiconductors via batch etch (10 wafers per cycle), the LAM 853-015982-001 filters high-flow etch gases. It handles 4200 sccm of C₄F₈ (gate etch) and 3800 sccm of NF₃ (passivation), removing ≥99.99% of 20 nm particles to prevent “etch pit” defects on transistor gates. Syncing with LAM 810-017021-001 (vacuum controller), the filter’s pressure drop monitoring alerts technicians to clogging 2 weeks early—avoiding unscheduled batch interruptions. A South Korean fab reported a 3.5% yield increase and 18% faster batch cycles after adopting the LAM 853-015982-001, meeting automotive IATF 16949 standards for 28nm chips.

High-Throughput 14nm ALD (LAM 2300 Series): For fabs running LAM 2300 ALD tools at 220 wafers/hour (14nm logic chip production), the LAM 853-015982-001 (heated version, 110°C) filters high-flow TiCl₄ precursor (3200 sccm) and O₂ (4000 sccm). Its molecular sieve blend reduces O₂ moisture to ≤3 ppb, ensuring uniform 1.0nm titanium oxide layers, while pleated PTFE media captures ≥20 nm particles from TiCl₄—eliminating “film void” defects. The filter’s ≤0.8 cm³ dead volume also enables fast precursor switching (≤100 ms), cutting ALD cycle time per wafer by 8% (from 16 seconds to 14.7 seconds). A Taiwanese fab using the LAM 853-015982-001 achieved 98.6% wafer pass rates, supporting monthly 14nm logic chip production of 150,000 units.

Related model recommendations

LAM 834-028913-025: High-flow MFC paired with LAM 853-015982-001; delivers 0–5000 sccm flow, ideal for LAM 9000 batch etch/2300 high-throughput ALD.

LAM 810-017021-001: Vacuum controller synced with LAM 853-015982-001; monitors post-filter pressure-flow balance, preventing batch process disruptions.

LAM 853-015982-HT: Heated variant of LAM 853-015982-001; 15°C–130°C operating temp, prevents condensation of high-flow HfCl₄/TiCl₄ precursors.

LAM 853-015982-FIL: Replacement filter cartridge for LAM 853-015982-001; pleated PTFE + molecular sieve blend, simplifies maintenance (no full filter replacement).

LAM 852-110198-001: High-flow gas manifold compatible with LAM 853-015982-001; distributes filtered high-flow gases to batch chambers, minimizing cross-contamination.

LAM 203-140148-308: High-pressure isolation valve paired with LAM 853-015982-001; closes in 50 ms if filter pressure drop exceeds 4 psig, protecting batch wafers.

LAM 716-028123-004: Medium-UHV sensor paired with LAM 853-015982-001; verifies post-filter gas purity, ensuring 14nm–28nm process stability.

LAM 853-013929-003: Mid-flow filter complementary to LAM 853-015982-001; for low-flow auxiliary gases (e.g., 500–2000 sccm N₂ purge) in the same tool.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 853-015982-001, confirm compatibility with your process gas (standard version for non-condensable gases, LAM 853-015982-HT for high-flow condensable precursors) and LAM tool (9000 batch/2300 high-throughput). Install the filter between LAM 834-028913-025 (high-flow MFC) and LAM 852-110198-001 (high-flow manifold) using 3/8” VCR fittings, torquing to 20 in-lbs (±1 in-lb) with a calibrated torque wrench (critical for high-flow leak tightness). Ensure the ISO Class 3 cleanroom installation has ≥10cm clearance from vibration sources (e.g., high-flow pumps) to avoid media damage. Use shielded, high-pressure tubing (max length 50m) for gas lines; route away from RF generators (13.56 MHz/27.12 MHz) to prevent EMI. Verify inlet pressure does not exceed 150 psig to protect the pressure relief valve.

Maintenance suggestions: Perform weekly pressure drop checks of LAM 853-015982-001 via LAM PCS; replace the LAM 853-015982-FIL cartridge if pressure drop exceeds 4 psig (more frequently for fluorinated gases: every 4 weeks). Every 6 months, inspect Kalrez® 6375 seals for high-pressure wear—replace if cracks or compression set are visible. Annually, perform a helium leak test (target ≤1×10⁻¹⁰ SCCM) and flush the filter with N₂ (5000 sccm, 20 minutes) to remove residual gas. For batch process tools, keep a spare LAM 853-015982-001 or cartridge on hand—target replacement time: <30 minutes for cartridges, <60 minutes for full filters—to minimize batch downtime.

Service and guarantee commitment

LAM Research backs LAM 853-015982-001 with a 2.5-year standard warranty, covering defects in materials and workmanship for 14nm–28nm high-flow semiconductor use. This warranty includes free replacement of faulty filters/cartridges and 24/7 technical support from LAM’s global high-flow gas delivery team, accessible via the LAM Customer Portal or dedicated account managers. For extended protection, customers can purchase LAM’s High-Flow Support Plan, which extends coverage to 4 years and includes quarterly on-site filter performance audits, priority technical support (≤3-hour response time), and discounted replacement cartridges.

All LAM 853-015982-001 units undergo rigorous high-flow testing: 100-hour thermal cycling (-25°C–90°C), 72-hour high-pressure corrosion testing (exposure to C₄F₈ at 150 psig), and flow efficiency verification (NIST-traceable particle/molecular standards at 5000 sccm). LAM also offers specialized training (e.g., “High-Flow Filter Maintenance for LAM 9000 Batch Etch”) to help technicians optimize performance. This commitment ensures LAM 853-015982-001 delivers reliable, high-throughput contamination control in 24/7 mid-node fabs, minimizing defect risk and supporting scalable production.