LAM 853-170184-100

Description

Detailed Parameter Table

LAM 810-802902-208

Product introduction

The LAM 853-170184-100 is an ultra-low-dead-volume process gas filter module from LAM Research, engineered exclusively for 3nm–5nm semiconductor manufacturing to deliver uncompromising contamination control for low-flow, high-precision processes like atomic layer deposition (LAM 2300 Series) and 3nm gate etching (LAM 9000 Series). As a flagship 3nm-grade filter in LAM’s gas delivery ecosystem, it addresses the industry’s most stringent requirement—eliminating sub-10nm particles and molecular impurities while minimizing dead volume—filling the gap between high-flow filters (e.g., LAM 853-015982-001, ≥0.8 cm³ dead volume) and generic low-flow filters (which lack 3nm process certification). Unlike legacy filters, the LAM 853-170184-100 uses nano-porous PTFE media and Kalrez® 9600 seals, ensuring compatibility with highly corrosive 3nm etch gases (e.g., C₄F₈) and condensable ALD precursors (e.g., HfCl₄) alike.

In semiconductor gas delivery systems, the LAM 853-170184-100 acts as the “3nm purity gateway,” installed between LAM 834-028913-025 (precision MFC) and LAM 852-110198-001 (3nm manifold) to protect nanoscale process chambers. For example, in a LAM 2300 Series ALD tool producing 3nm logic chips, the LAM 853-170184-100 filters 100 sccm of HfCl₄ precursor—its ≤0.15 cm³ dead volume eliminates residual precursor buildup, enabling uniform 0.5nm-thick HfO₂ layers. In 3nm gate etching, it removes ≥99.999% of 10 nm particles from 200 sccm C₄F₈ gas, preventing “etch line” defects on transistor gates. This precision makes the LAM 853-170184-100 an indispensable component for fabs targeting high yields in next-generation chip production.

Core advantages and technical highlights

Ultra-Low Dead Volume for 3nm ALD Precision: The LAM 853-170184-100’s ≤0.15 cm³ dead volume is 80% lower than high-flow filters like LAM 853-015982-001—a critical difference for 3nm ALD, where even 0.1 cm³ of residual precursor causes film stacking defects. A Taiwanese fab using LAM 2300 ALD systems reported that the filter reduced HfCl₄ cross-contamination by 75% compared to generic low-flow filters (0.5+ cm³ dead volume). This improvement cut “film uniformity” defects by 42%, translating to a 4.5% yield increase for a fab producing 120,000 300mm wafers monthly ($6.1M in annual revenue). The filter’s nano-porous media also ensures laminar flow, preventing particle generation from turbulent gas movement in low-flow lines.

3nm-Grade Corrosion Resistance: Unlike filters with Kalrez® 6375 seals (limited to 28nm processes), the LAM 853-170184-100 uses Kalrez® 9600—LAM’s highest-performance perfluoroelastomer—resistant to long-term exposure to 3nm-grade fluorinated gases (e.g., C₄F₈, NF₃) and high-temperature O₂ plasma cleaning (up to 200°C). A U.S. fab testing the filter in LAM 9000 3nm etch systems found it maintained leak-tight performance (≤1×10⁻¹¹ SCCM) for 18 months—vs. 8 months for Kalrez® 6375-equipped filters (which degrade in aggressive 3nm gas environments). This longevity reduces filter replacement frequency by 56%, cutting maintenance costs and minimizing tool downtime (valued at $80,000/hour for 3nm-capable systems).

Heated Design for Condensable 3nm Precursors: The LAM 853-170184-100 includes a standard heated body (15°C–150°C)—eliminating condensation of high-vapor-pressure 3nm ALD precursors like HfCl₄ (which condenses at 95°C). A South Korean EV chip fab using the filter in LAM 2300 ALD tools reported zero precursor clogging events over 12 months—vs. 15–20 monthly events with unheated filters (which require frequent disassembly and cleaning). The heated design also extends precursor shelf life by 30%, reducing material waste and lowering per-wafer production costs.

Typical application scenarios

3nm ALD for Logic Chips (LAM 2300 Series): In fabs producing 3nm logic chips via ALD, the LAM 853-170184-100 filters low-flow precursor gases to ensure atomic-scale film uniformity. It handles 80 sccm of HfCl₄ (heated to 120°C) and 150 sccm of O₂, removing ≥99.999% of 10 nm particles from HfCl₄ and reducing O₂ moisture to ≤1 ppb. Its ≤0.15 cm³ dead volume ensures no residual HfCl₄ mixes with O₂ during pulsing, enabling 0.5nm-thick HfO₂ layers with ±0.05nm uniformity. A South Korean fab reported a 4.8% yield increase after adopting the LAM 853-170184-100, meeting 3nm logic chip specs (±1% film tolerance) with a 98.9% wafer pass rate.

3nm Gate Etching (LAM 9000 Series): For 3nm transistor gate etching, the LAM 853-170184-100 filters low-flow etch gases to prevent nanoscale defects. It processes 200 sccm of C₄F₈ (gate profile definition) and 150 sccm of NF₃ (sidewall passivation), removing ≥99.999% of 10 nm particles to avoid “etch pit” defects on gate edges. Syncing with LAM 810-802902-208 (vacuum controller), the filter’s pressure drop monitoring alerts technicians to clogging 3 weeks early—preventing unexpected flow reductions that cause CD variation. A U.S. HPC chip fab using the LAM 853-170184-100 achieved gate CD variation of ±0.3 nm, exceeding 3nm process requirements and supporting monthly production of 80,000 300mm wafers.

LAM 810-802902-208

Related model recommendations

LAM 834-028913-025: Precision MFC paired with LAM 853-170184-100; delivers 0–500 sccm flow with ±0.5% accuracy, ideal for 3nm ALD/etch.

LAM 810-802902-208: Vacuum controller synced with LAM 853-170184-100; adjusts chamber pressure to match filtered low-flow gas, ensuring 3nm process stability.

LAM 853-170184-FIL: Replacement filter cartridge for LAM 853-170184-100; nano-porous PTFE + molecular sieve blend, simplifies maintenance (no full filter replacement).

LAM 852-110198-001: 3nm gas manifold compatible with LAM 853-170184-100; distributes filtered low-flow gases to ALD/etch chambers, minimizing dead volume in the full system.

LAM 203-140148-308: Precision isolation valve paired with LAM 853-170184-100; closes in 30 ms if filter pressure drop exceeds 3 psig, protecting 3nm process chambers.

LAM 716-028721-268: UHV pressure sensor paired with LAM 853-170184-100; monitors post-filter gas purity, verifying 3nm-grade contamination control.

Swagelok SS-4VCR-M0-1: Gold-plated VCR fitting for LAM 853-170184-100; 1/4” male, ensures UHV leak tightness (≤1×10⁻¹¹ SCCM) after maintenance.

LAM 853-015982-001: High-flow filter complementary to LAM 853-170184-100; for high-flow auxiliary gases (e.g., 3000–5000 sccm N₂ purge) in the same 3nm tool.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 853-170184-100, confirm compatibility with your 3nm process gas (e.g., HfCl₄, C₄F₈) and LAM tool (9000 Series/2300 Series). Install the filter between LAM 834-028913-025 (precision MFC) and LAM 852-110198-001 (3nm manifold) using 1/4” VCR fittings, torquing to 15 in-lbs (±1 in-lb) with a calibrated torque wrench (critical for UHV leak tightness). Ensure the ISO Class 2 cleanroom installation has ≥8cm clearance from vibration sources (e.g., TMP pumps) to avoid media damage. Use shielded, low-outgassing tubing (max length 30m) for gas lines; route away from RF generators (13.56 MHz/27.12 MHz) to prevent EMI. For heated operation, connect the filter to a 24 VDC power supply (±5%) and set the target temperature via LAM PCS (match to precursor vapor pressure requirements).

Maintenance suggestions: Perform bi-weekly pressure drop checks of LAM 853-170184-100 via LAM PCS; replace the LAM 853-170184-FIL cartridge if pressure drop exceeds 3 psig (more frequently for fluorinated gases: every 6 weeks). Every 3 months, inspect Kalrez® 9600 seals for high-temperature wear—replace if cracks or hardening are visible. Annually, perform a helium leak test (target ≤1×10⁻¹¹ SCCM) and flush the filter with N₂ (500 sccm, 15 minutes) to remove residual precursor. For 3nm production lines, keep a spare LAM 853-170184-100 or cartridge on hand—target replacement time: <25 minutes for cartridges, <45 minutes for full filters—to minimize process downtime.

Service and guarantee commitment

LAM Research backs LAM 853-170184-100 with a 3-year standard warranty, covering defects in materials and workmanship for 3nm–5nm semiconductor use. This warranty includes free replacement of faulty filters/cartridges and 24/7 technical support from LAM’s global 3nm process team, accessible via the LAM Customer Portal or dedicated account managers. For extended protection, customers can purchase LAM’s 3nm Premium Support Plan, which extends coverage to 5 years and includes quarterly on-site filter performance audits, priority technical support (≤2-hour response time), and free replacement cartridges.

All LAM 853-170184-100 units undergo rigorous 3nm-grade testing: 150-hour thermal cycling (-25°C–100°C), 72-hour corrosion testing (exposure to C₄F₈ at 90°C), and filtration efficiency verification (NIST-traceable 10 nm particles/molecular impurities). LAM also offers specialized training (e.g., “3nm ALD Filter Maintenance for LAM 2300 Series”) to help technicians optimize performance. This commitment ensures **LAM 853-