LAM 853-17632-001

Dual-Layer Filtration for Comprehensive Purity: LAM 853-17632-001’s PTFE membrane + molecular sieve combination eliminates the need for separate particle filters and dryers—reducing gas cabinet space by 40% and component count by 50% vs. multi-filter setups. A Southeast Asian fab using LAM 853-17632-001 with LAM 810-17012-001 reported that SiH₄ moisture levels dropped from 5 ppb to ≤1 ppb, cutting “oxide inclusion” defects in 45nm IoT sensor deposition by 3.2%. The 0.1 μm particle removal also meets 28nm process requirements, avoiding the 7% wafer scrap caused by generic 1 μm filters.

Cost-Optimized for Low-Flow Mature Workflows: LAM 853-17632-001 targets the 0–100 sccm low-flow range that dominates 28nm–90nm basic processes (e.g., 50 sccm SiH₄ for thin-film deposition), costing 50% less than mid-range multi-channel filters (e.g., LAM 853-017805-55) and 70% less than advanced fluorinated gas filters. A Mexican R&D lab with 3 legacy LAM 2300 tools saved $18k vs. upgrading to multi-channel models, with no compromise in 90nm material research results (film thickness variation remained ≤3%). The passive design also reduces long-term costs by eliminating power wiring and maintenance for active components.

Seamless Integration with LAM Mature-Node Tools: LAM 853-17632-001 is engineered to work natively with LAM’s 28nm–90nm tool chain, including LAM 810-17012-001 (vacuum control) and LAM 839-011025-1 (MFC). Its 1/4” gold-plated VCR fittings match LAM tool ports, ensuring leak-tight connections (≤1×10⁻¹⁰ SCCM) without custom adapters. A European small fab reported that installation took <15 minutes per module (vs. 1 hour for non-LAM filters), and compatibility with LAM PCS v4.5+ enabled centralized filter replacement tracking—reducing maintenance oversight errors by 60%.

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Description

Detailed Parameter Table

Parameter Name Parameter Value
Product model LAM 853-17632-001
Manufacturer LAM Research Corporation
Product category Single-Channel Low-Flow Gas Filter Module (Mature Node 28nm–90nm Compatibility)
Filtration Performance Particle removal: ≥99.99% (≥0.1 μm particles); Molecular removal: ≥99.5% (moisture, hydrocarbons, oxygen)
Flow Rate Range 0–100 sccm (N₂ equivalent); Max short-term flow: 150 sccm (≤1 hour); Pressure drop: ≤0.5 psig (at 100 sccm, 25°C)
Gas Compatibility Non-corrosive gases (Ar, N₂, He, O₂, SiH₄, PH₃); Not compatible with fluorinated gases (C₄F₈, NF₃) or strong acids
Operating Pressure Range Inlet: 5–100 psig; Outlet: 4.5–99.5 psig; Max static pressure: 150 psig (non-operating)
Material Specifications – Housing: 316L stainless steel (electropolished, Ra ≤0.2 μm, passivated per ASTM A967)- Filter Media: Dual-layer (PTFE membrane + 3A molecular sieve)- Seals: Viton® FKM (operating temp: -20°C–120°C, low outgassing)- Fittings: 1/4” VCR male (inlet/outlet, gold-plated)
Environmental Ratings Operating temp: 5°C–80°C; Humidity: 5–90% RH (non-condensing); IP52 protection; ISO Class 4 cleanroom compatible
Physical Dimensions 60 mm (L) × 30 mm (W) × 30 mm (H); Weight: 0.25 kg (0.55 lbs)
Leak Rate ≤1×10⁻¹⁰ SCCM (helium test, ambient temp, per SEMI F20); No cross-channel leakage (single-channel design)
Power Requirements None (passive filtration, no external power needed)
Safety Certifications SEMI S2, CE, RoHS 3.0; Built-in rupture disk (150 psig burst pressure); ESD protection (±15 kV contact)
Integration Compatibility Natively supports LAM 790 Series (low-end etch), legacy LAM 2300 Series (basic deposition); Works with LAM 810-17012-001 (vacuum control), LAM 839-011025-1 (basic MFC)
LAM 810-048219-019

LAM 810-048219-019

Product introduction

LAM 853-17632-001 is a dedicated single-channel low-flow gas filter module developed by LAM Research, engineered to address gas purification needs in 28nm–90nm mature semiconductor processes—filling the gap between generic industrial filters (insufficient purity) and multi-channel advanced filters (unnecessary cost) for small-to-medium fabs and R&D labs. As a key component of LAM’s Mature Node Gas Delivery Ecosystem, it focuses on core filtration functions, ensuring process gas purity without the redundancy of extra channels or complex monitoring features.

Unlike generic filters limited to ≥1 μm particle removal (inadequate for 28nm film quality), LAM 853-17632-001 uses a dual-layer media design: a 0.1 μm PTFE membrane traps micro-particles that cause “etch pits” or “film voids,” while 3A molecular sieve removes moisture and hydrocarbons to ≤1 ppb—critical for maintaining SiH₄ reactivity in deposition or O₂ plasma stability in etch. Its passive design (no external power) simplifies integration, making it an ideal companion for LAM 810-17012-001 (vacuum control module) and LAM 839-011025-1 (basic MFC) in low-complexity workflows.

In automation systems, LAM 853-17632-001 acts as a “gas purity guardian,” installed between the MFC and process chamber to protect sensitive tools from contamination. By ensuring consistent gas quality, it directly reduces wafer scrap rates caused by impure gases—particularly valuable for cost-sensitive 28nm–90nm production where even 1% yield loss translates to significant revenue impact. Its compact size and LAM tool compatibility also eliminate the need for custom adapters, cutting installation time by 50% vs. non-LAM filters.

Core advantages and technical highlights

Dual-Layer Filtration for Comprehensive Purity: LAM 853-17632-001’s PTFE membrane + molecular sieve combination eliminates the need for separate particle filters and dryers—reducing gas cabinet space by 40% and component count by 50% vs. multi-filter setups. A Southeast Asian fab using LAM 853-17632-001 with LAM 810-17012-001 reported that SiH₄ moisture levels dropped from 5 ppb to ≤1 ppb, cutting “oxide inclusion” defects in 45nm IoT sensor deposition by 3.2%. The 0.1 μm particle removal also meets 28nm process requirements, avoiding the 7% wafer scrap caused by generic 1 μm filters.

Cost-Optimized for Low-Flow Mature Workflows: LAM 853-17632-001 targets the 0–100 sccm low-flow range that dominates 28nm–90nm basic processes (e.g., 50 sccm SiH₄ for thin-film deposition), costing 50% less than mid-range multi-channel filters (e.g., LAM 853-017805-55) and 70% less than advanced fluorinated gas filters. A Mexican R&D lab with 3 legacy LAM 2300 tools saved $18k vs. upgrading to multi-channel models, with no compromise in 90nm material research results (film thickness variation remained ≤3%). The passive design also reduces long-term costs by eliminating power wiring and maintenance for active components.

Seamless Integration with LAM Mature-Node Tools: LAM 853-17632-001 is engineered to work natively with LAM’s 28nm–90nm tool chain, including LAM 810-17012-001 (vacuum control) and LAM 839-011025-1 (MFC). Its 1/4” gold-plated VCR fittings match LAM tool ports, ensuring leak-tight connections (≤1×10⁻¹⁰ SCCM) without custom adapters. A European small fab reported that installation took <15 minutes per module (vs. 1 hour for non-LAM filters), and compatibility with LAM PCS v4.5+ enabled centralized filter replacement tracking—reducing maintenance oversight errors by 60%.

Typical application scenarios

LAM 853-17632-001 excels in low-flow 28nm–90nm processes, with two high-value use cases. In small fabs producing 45nm industrial IoT sensors via low-end LAM 790 etch tools, LAM 853-17632-001 filters SiH₄ (50 sccm) to remove ≥0.1 μm particles and moisture—critical for etching 100nm-deep trenches where particle contamination causes “etch pit” defects. Paired with LAM 810-17012-001 (which maintains chamber vacuum at 1×10⁻⁶ Torr), LAM 853-17632-001 reduced etch-related scrap by 2.5% and lifted wafer pass rates to 96.5%—meeting industrial sensor reliability standards.

In legacy LAM 2300 basic deposition for 90nm passive components (e.g., thick-film resistors), LAM 853-17632-001 purifies Ar (80 sccm) used for sputter coating. Its dual-layer media removes hydrocarbons (≥99.5%) and particles, ensuring aluminum film purity (≤5 ppb organic contamination) and avoiding “film haze” that degrades resistor performance. A small U.S. fab using LAM 853-17632-001 reported 25% lower annual maintenance costs vs. generic filters, as the replaceable cartridge (LAM 853-17632-FIL) can be swapped in <10 minutes—minimizing deposition tool downtime.

LAM 810-048219-019

LAM 810-048219-019

Related model recommendations

LAM 853-17632-FIL: Replacement filter cartridge exclusive to LAM 853-17632-001; Dual-layer (PTFE + molecular sieve), tool-free installation, 6–12 month service life.

LAM 810-17012-001: Basic vacuum control module paired with LAM 853-17632-001; Maintains chamber vacuum to complement filtered gas, ensuring 28nm–90nm process stability.

LAM 839-011025-1: Basic MFC (0–200 sccm) compatible with LAM 853-17632-001; Delivers low-flow gas to the filter for purification in etch/deposition.

LAM 203-140148-308 (Basic Variant): Isolation valve synced with LAM 853-17632-001; 50 ms response time, closes if pressure drop exceeds 1 psig (indicates media clogging).

LAM 852-110198-001 (Basic Variant): Simple gas manifold for LAM 853-17632-001; Distributes filtered gas to 1–2 chambers, ideal for small-scale setups.

LAM 718-094756-081: Wafer temperature module compatible with LAM 853-17632-001; Coordinates thermal control with purified gas to optimize film uniformity.

LAM 853-017805-55: Mid-range upgrade for LAM 853-17632-001; 4-channel design, weak fluorinated gas compatibility, for fabs transitioning to 14nm–28nm.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 853-17632-001, confirm compatibility with target gases (non-fluorinated only) and LAM tool (low-end 790/legacy 2300). Power off the gas delivery system and purge lines with N₂ (50 sccm, 10 minutes) to remove residual gas. Mount the module via included panel-mount brackets, ensuring inlet/outlet orientation (arrow marked on housing) and ≥5cm clearance from heat sources (e.g., MFC heaters) to avoid seal degradation. Connect gas lines: Inlet to LAM 839-011025-1 (MFC) outlet, outlet to process chamber manifold, using 1/4” VCR fittings. Torque fittings to 15 in-lbs ±1 in-lb with a calibrated torque wrench, then perform a helium leak test (target ≤1×10⁻¹⁰ SCCM) before commissioning.

Maintenance suggestions: Conduct weekly checks of LAM 853-17632-001 via pressure drop monitoring (use MFC pressure readings)—replace the LAM 853-17632-FIL cartridge if pressure drop exceeds 1 psig (indicates media clogging). Proactively replace the cartridge every 6 months (or 12 months for low-flow ≤50 sccm) to maintain filtration efficiency. During replacement, purge lines with N₂ (50 sccm, 5 minutes) before disconnecting the filter to avoid air contamination. Inspect Viton® seals annually for hardening or cracking—replace seals if leaks are detected after cartridge replacement. Keep 2–3 spare cartridges on hand for small-scale lines to minimize downtime (replacement takes <10 minutes).

Service and guarantee commitment

LAM Research provides a 1.5-year standard warranty for LAM 853-17632-001, covering defects in materials and workmanship for 28nm–90nm semiconductor use (non-fluorinated gas environments only). This warranty includes free replacement of faulty components (e.g., housing, seals) and excludes consumable filter cartridges (LAM 853-17632-FIL). Weekday technical support (8 AM–5 PM local time) is available via the LAM Customer Portal or email, offering guidance on installation, leak testing, and maintenance best practices.

For extended protection, customers can purchase LAM’s Basic Mature-Node Filtration Support Plan, which extends coverage to 3 years and includes annual on-site leak test verification, 20% discounted replacement cartridges, and priority technical support (≤8-hour response time). All LAM 853-17632-001 units undergo 100% pre-shipment testing—including helium leak checks, filtration efficiency verification (≥99.99% for 0.1 μm particles), and seal integrity testing—ensuring reliable performance in 24/7 mature-node production.

 

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