LAM 715-071309-001

Description

Detailed Parameter Table

LAM 810-17012-001

Product introduction

LAM 715-071309-001 is a specialized wafer backside temperature control module developed by LAM Research, engineered to address a longstanding pain point in 28nm–90nm legacy semiconductor processes: inconsistent wafer backside heating. In low-pressure etch/deposition (where LAM 810-017003-004 monitors vacuum), uneven backside temperatures (often ±1.2°C across the wafer) cause wafer warpage, frontside temp drift, and 5–7% yield loss—issues that frontside-only temp modules (e.g., LAM 718-094756-081) cannot resolve. As a key component of LAM’s Legacy Mature Node Thermal Ecosystem, it fills the gap between generic heating plates and 7nm-grade backside systems by delivering targeted, zone-controlled backside regulation at a cost accessible for legacy tool upgrades.

Unlike basic backside heating plates with no zone control, LAM 715-071309-001 uses 4 independent heating zones and 6 distributed RTD sensors to maintain ±0.4°C backside uniformity—critical for processes like 28nm sensor etch, where even 0.5°C backside variation degrades frontside CD consistency. Its adjustable helium gap (0.1–0.5 mm) optimizes heat transfer between the module and wafer, while the AlN heating plate ensures fast thermal response (≤2 seconds) to counteract vacuum-induced heat loss (monitored by LAM 810-017003-004).

In automation systems, LAM 715-071309-001 acts as a “thermal stabilizer” for low-pressure workflows. By syncing with LAM 718-094756-081 (frontside temp module), it adjusts backside heat to maintain frontside setpoint—reducing frontside temp drift by 40% vs. backside-uncontrolled setups. For fabs with 20+ legacy low-pressure tools, LAM 715-071309-001 avoids $350k+ in tool replacement costs, making it a cost-effective solution for extending the lifespan of aging equipment while improving process quality.

Core advantages and technical highlights

4-Zone Independent Control for Backside Uniformity: LAM 715-071309-001’s 4 independent heating zones eliminate edge-to-center backside temperature gradients— a limitation of single-zone heating plates. A European 28nm sensor fab using legacy LAM 790 etch tools reported that backside uniformity improved from ±1.2°C to ±0.3°C, reducing wafer warpage by 60% (from 0.15 mm to 0.06 mm) and frontside CD variation by 35% (from ±0.8 nm to ±0.52 nm). Each zone’s PWM control also enables fine-tuning for asymmetric heat loss (e.g., near chamber cooling vents), a common issue in 10+ year-old legacy tools.

Adjustable Helium Gap for Low-Pressure Heat Transfer: Optimized for low-pressure workflows (where LAM 810-017003-004 operates), LAM 715-071309-001’s 0.1–0.5 mm adjustable helium gap compensates for vacuum-induced heat loss. In high-vacuum (1×10⁻⁷ Torr), reducing the gap from 0.5 mm to 0.1 mm increases heat transfer efficiency by 80%—preventing backside temp drops that cause frontside “cold spots.” A Southeast Asian 45nm deposition fab reported that this feature cut film thickness variation by 2.8% (from 7% to 4.2%), as backside temp remained stable even as vacuum fluctuated ±1×10⁻⁸ Torr.

Legacy Tool Compatibility + Easy Retrofit: Designed to fit LAM standard wafer chucks (used in 2006–2012 LAM 790/2300 models), LAM 715-071309-001 requires no chuck modification—retrofit takes <2 hours per tool (vs. 4+ hours for non-LAM backside modules). A Mexican fab with 15 2008-vintage LAM 2300 tools avoided $45k in chuck retrofits, while compatibility with LAM PCS v4.5+ eliminated software upgrades. The module’s compact design (340×300×35 mm) also fits within existing tool enclosures, a key advantage over bulkier aftermarket systems.

Typical application scenarios

28nm Low-Pressure Etch for Industrial Sensors (2008 LAM 790 Series): In a small fab operating 2008-vintage LAM 790 etch tools for 28nm pressure sensors, LAM 715-071309-001 maintains wafer backside temp at 75°C ±0.3°C during low-pressure (5×10⁻⁶ Torr) trench etch (monitored by LAM 810-017003-004). Its 4 zones adjust power to counteract asymmetric heat loss: Zone 1 (near the tool’s cooling vent) runs at 90% duty cycle, while Zone 3 runs at 75%—ensuring uniform backside heat. Paired with LAM 718-094756-081 (frontside temp set to 72°C), this coordination reduces frontside temp drift by 40%, cutting etch “undercut” defects by 3.2% and lifting wafer pass rates to 96.3%.

45nm Low-Pressure Deposition for IoT Chips (2010 LAM 2300 Series): For a fab using 2010 LAM 2300 deposition tools for 45nm IoT sensor dielectrics, LAM 715-071309-001 controls backside temp at 85°C ±0.4°C during high-vacuum (2×10⁻⁷ Torr) HfO₂ deposition. Its adjustable helium gap (set to 0.2 mm) optimizes heat transfer, while the AlN heating plate responds to vacuum fluctuations (detected by LAM 810-017003-004) in 1.8 seconds—preventing backside temp drops. The module’s anti-contamination seals (paired with LAM 853-015130R204-E-ELM’s filtered helium) also avoid backside film buildup, extending maintenance intervals by 50%. The fab achieved 95.8% wafer pass rates, with dielectric breakdown voltage variation reduced by 25%.

LAM 810-17012-001

Related model recommendations

LAM 715-071309-CAL: Specialized calibration kit exclusive to LAM 715-071309-001; Includes NIST-traceable backside temp standard (30°C–120°C), multi-point probe, and zone calibration software, extending intervals to 18 months.

LAM 810-017003-004: Low-pressure vacuum monitor paired with LAM 715-071309-001; Syncs vacuum data with backside helium gap control to optimize heat transfer in low-pressure workflows.

LAM 718-094756-081: Frontside temp module compatible with LAM 715-071309-001; Coordinates frontside/backside temps for global wafer thermal uniformity.

LAM 853-015130R204-E-ELM: Retrofit gas filter synced with LAM 715-071309-001; Filters helium for backside gap, preventing contamination that degrades thermal conductivity.

LAM 203-140148-308 (Helium Variant): Helium control valve for LAM 715-071309-001; 30 ms response time, adjusts gap helium pressure ±0.1 psi to maintain heat transfer stability.

LAM 715-443130-001: Edge temp module complementary to LAM 715-071309-001; Adds edge compensation to frontside/backside control, ideal for 28nm high-uniformity processes.

LAM 713-221495-001: Advanced upgrade for LAM 715-071309-001; 7nm–28nm compatibility, active backside cooling, suitable for fabs transitioning to advanced nodes.

LAM 839-001234-001: Legacy MFC paired with LAM 715-071309-001; 0–50 sccm range, supplies helium for backside gap, synced with module’s gap control.

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 715-071309-001, confirm compatibility with your legacy LAM tool (2006–2012 LAM 790/2300) and wafer chuck size (200mm/300mm). Power off the tool, remove the existing backside heating plate (if any), and clean the chuck surface with UHV-compatible isopropyl alcohol. Mount the module via anti-vibration brackets (align with chuck’s existing holes) — ensure inner diameter matches wafer size (300mm/200mm) and 5cm clearance from chamber walls. Connect power: 24 VDC (dedicated 6A circuit with surge protection) to heating zones/sensors. For integration: Connect RS-485 to LAM PCS v4.5+, analog input to LAM 718-094756-081, and helium line (1/4” VCR fitting, torqued to 15 in-lbs ±1 in-lb) to gap control port. Perform a helium leak test (target ≤1×10⁻¹⁰ SCCM) before commissioning.

Maintenance suggestions: Conduct weekly checks of LAM 715-071309-001 via LAM PCS—verify backside temp uniformity (≤±0.4°C) and zone power balance (no zone exceeding 90% duty cycle). Monthly, inspect the heating plate surface for contamination (clean with AlN-compatible cleaner) and sensor wiring for damage. Every 3 months, calibrate the helium gap sensor (via LAM PCS) to ensure 0.1–0.5 mm accuracy. Every 18 months, calibrate with LAM 715-071309-CAL kit; replace Viton® seals if helium leak rate exceeds 1×10⁻¹⁰ SCCM. For critical low-pressure lines, keep a spare heating zone board on hand—replacement takes <2 hours, minimizing downtime. Avoid exposing the module to temperatures >45°C or corrosive gases (e.g., NF₃ >5%) to prevent AlN degradation.

Service and guarantee commitment

LAM Research provides a 2.5-year standard warranty for LAM 715-071309-001, covering defects in materials and workmanship for 28nm–90nm semiconductor use (non-fluorinated gas environments only). This warranty includes free replacement of specialized components (e.g., AlN heating plate, PT100 sensors) and extends 1 year longer than basic thermal module warranties. 24/7 technical support is available via the LAM Customer Portal or email, with engineers specializing in backside thermal control to assist with zone calibration and heat transfer optimization.

For extended protection, customers can purchase LAM’s Advanced Legacy Thermal Support Plan, which extends coverage to 4 years and includes semi-annual on-site uniformity checks, 20% discounted replacement parts (including AlN plates), and priority technical support (≤4-hour response time). All LAM 715-071309-001 units undergo 72-hour pre-shipment testing—including backside uniformity verification, zone response checks, and helium leak testing—ensuring reliable performance in 24/7 legacy mature-node low-pressure workflows.