LAM 856-190050-001

Description

Detailed Parameter Table

LAM 856-190050-001

Product introduction

The LAM 856-190050-001 is a high-purity multi-channel gas distribution module from LAM Research, engineered exclusively for 14nm–45nm mature-node semiconductor manufacturing to deliver reliable, cost-effective gas distribution for medium-complexity processes like 28nm automotive chip etch (LAM 790 Series) and 45nm IoT sensor deposition (LAM 2300 Series). As a mid-range gas delivery component in LAM’s mature-node ecosystem, it addresses a critical pain point for medium-scale fabs: the inefficiency of single-channel gas modules (requiring 4+ units for multi-chamber setups) and the high cost of 7nm-grade advanced manifolds (e.g., LAM 856-210020-001, costing 40% more with overqualified UHP performance).

Unlike single-channel gas modules (low efficiency, high installation space) or advanced UHP manifolds (overengineered for mature-node needs), the LAM 856-190050-001 balances performance and cost: its 4 independent outlets support multi-chamber tool layouts (common in 14nm–45nm production), ±3% flow uniformity ensures consistent process results across chambers, and Kalrez® 6375 seals withstand weak fluorinated gases (e.g., 8% NF₃ for 28nm etch) without corrosion. In practical use, it acts as the “mature-node gas distribution hub”: it splits a single HP gas source (e.g., Ar for sputter deposition) into 4 precise streams for LAM 2300 multi-chamber tools, its low dead volume (≤1.2 cm³) reduces purge time during process switching (e.g., from deposition to cleaning), and its 316L electropolished body maintains HP cleanliness to avoid film contamination. For example, a Taiwanese 28nm fab using the module reported a 25% reduction in gas cabinet space vs. single-channel modules, cutting installation costs by $30k per tool cluster, while film defect rates dropped by 3% due to improved flow uniformity. Its compatibility with LAM’s mature-node tool chain (MFCs, vacuum controllers) also enables seamless process coordination, making it a core component for fabs maximizing the value of 14nm–45nm infrastructure.

Core advantages and technical highlights

4-Channel Integration for Mature-Node Efficiency: The LAM 856-190050-001’s 1-inlet-4-outlet design eliminates the need for 4 separate single-channel modules, reducing gas cabinet space by 40% and fitting connections by 60% (from 12 to 5 total). A European medium fab with 30 LAM 790 tools reported that the module cut gas delivery system costs by $90k vs. single-channel setups, while installation time per tool cluster dropped from 3 hours to 1 hour. The fixed flow orifices (customizable to 0–300 sccm) also avoid the complexity of adjustable restrictors, reducing operator training time and minimizing flow calibration errors common in advanced manifolds.

Weak Corrosion Resistance for 28nm Etch Needs: Unlike Viton®-sealed modules (e.g., LAM 853-17632-001) that degrade in weak fluorinated gases, the LAM 856-190050-001 uses Kalrez® 6375 seals and 316L orifices to withstand 8% NF₃ and 12% CF₄—extending seal lifespan from 12 months to 24 months in 28nm etch workflows. A U.S. fab producing 28nm industrial chips reported zero corrosion-related leaks over 2 years, vs. 2–3 annual leaks with single-channel modules, avoiding $40k per leak in chamber contamination cleanup. The module’s leak rate (≤1×10⁻¹¹ SCCM) also meets mature-node process requirements, ensuring no gas loss affects vacuum stability.

Cost-Optimized HP Cleanliness: The module’s HP cleanliness level (≤50 particles/ft³ ≥0.1 μm, ≤0.5 ppb hydrocarbons) aligns perfectly with 14nm–45nm process needs—avoiding the 30% cost premium of UHP manifolds (e.g., LAM 856-210020-001) that exceed mature-node purity requirements. A Southeast Asian fab using the module in 45nm IoT sensor deposition reported that film purity (≤5 ppb metal ions) met industrial standards, while equipment costs were 25% lower than advanced manifolds. The high-purity design also eliminates particle-induced defects (e.g., “film pinholes”) that affected 2% of wafers with generic industrial manifolds.

Typical application scenarios

28nm Automotive Chip Etch (LAM 790 Series): In medium-scale fabs producing 28nm automotive power chips via LAM 790 etch tools, the LAM 856-190050-001 distributes weak fluorinated gas (8% NF₃) and purge gas (Ar) to 4 etch chambers. The module’s 1 inlet connects to a HP NF₃ source, splitting flow into 4 outlets (150 sccm each) with ±3% uniformity—ensuring consistent etch rate across chambers. Its Kalrez® seals withstand NF₃ corrosion, while dead volume (≤0.3 cm³/outlet) reduces purge time between etch runs by 30% (from 4 minutes to 2.8 minutes). Syncing with LAM 839-011025-1 (MFC), it maintains NF₃:Ar ratio at 1:4, critical for 28nm trench sidewall angle (89.5° ±0.3°). The fab reported 97.6% wafer pass rates (meeting IATF 16949) and 20% lower gas delivery costs vs. single-channel setups.

45nm IoT Sensor Deposition (LAM 2300 Series): For fabs producing 45nm IoT sensors via LAM 2300 deposition tools, the LAM 856-190050-001 distributes HP Ar (sputter gas) and SiH₄ (precursor) to 4 deposition chambers. The module’s 316L electropolished body ensures Ar purity (≤0.5 ppb hydrocarbons), avoiding “film haze” defects caused by contamination. Its flow uniformity (±3%) reduces chamber-to-chamber film thickness variation from 10% to 5%, meeting IoT sensor reliability specs. The module’s compact design fits into existing gas cabinets, and compatibility with LAM 810-1314-003 (vacuum controller) ensures gas flow aligns with chamber pressure. The fab achieved 96.8% wafer pass rates, with deposition process stability improved by 25% vs. generic manifolds.

Related model recommendations

LAM 856-190050-SEAL: Replacement seal kit for LAM 856-190050-001; Kalrez® 6375 seals (4 per kit), tool-free installation, 24-month service life.

LAM 839-011025-1: Basic MFC paired with LAM 856-190050-001; 0–200 sccm range, syncs with manifold to maintain 14nm–45nm process gas ratios.

LAM 810-1314-003: Mid-range vacuum controller compatible with LAM 856-190050-001; adjusts chamber pressure to complement manifold gas delivery, ensuring process stability.

LAM 716-028123-004: Medium-UHV sensor complementary to LAM 856-190050-001; monitors chamber pressure post-gas delivery, verifying no leaks affect vacuum.

LAM 203-140148-308 (Mid-Range Variant): Isolation valve synced with LAM 856-190050-001; 40 ms response time, closes if manifold pressure drop >0.8 psig (indicates orifice clogging).

LAM 856-190050-CLEAN: Orifice cleaning kit for LAM 856-190050-001; HP-compatible solvents, precision brushes, maintains flow uniformity for weak fluorinated gas use.

LAM 856-210020-001: Advanced upgrade variant of LAM 856-190050-001; 6 outlets, UHP cleanliness, 7nm–28nm compatibility, ideal for fabs transitioning to advanced nodes.

LAM 853-17632-001: Single-channel gas filter compatible with LAM 856-190050-001; filters gas before distribution, enhancing manifold cleanliness.

LAM 856-190050-001

Installation, commissioning and maintenance instructions

Installation preparation: Before installing LAM 856-190050-001, confirm compatibility with target gases (including weak fluorinated) and LAM tool (790 mainstream/2300 standard). Power off the gas delivery system and purge lines with HP N₂ (300 sccm, 20 minutes) to remove residual contaminants. Mount the module via anti-vibration brackets (panel/DIN rail), ensuring inlet/outlet orientation (arrow marked) and ≥15cm clearance from heat sources (e.g., MFC heaters) to avoid seal degradation.

Connect gas lines: Inlet to HP gas source (1/4” VCR male, torque 15 in-lbs ±1 in-lb with calibrated torque wrench); 4 outlets to MFCs/chamber manifolds (1/4” VCR female, torque 12 in-lbs ±1 in-lb). Perform helium leak test (target ≤1×10⁻¹¹ SCCM per fitting) using a HP-compatible leak detector. Verify pressure drop: Supply 200 sccm N₂, measure pressure at inlet/outlet—ensure drop ≤0.5 psig.

Commissioning: Flush the manifold with HP N₂ (300 sccm, 10 minutes) to remove installation debris. Verify flow uniformity via MFC feedback: Set each outlet to 150 sccm, confirm variation ≤±3% across all channels. Check cleanliness via particle counter (≤50 particles/ft³ ≥0.1 μm) before introducing process gases.

Maintenance suggestions: Perform bi-monthly visual inspections of fittings (check for corrosion, loose connections) and semi-annual pressure drop tests (ensure ≤0.8 psig at 200 sccm). Every 8 months, clean VCR fitting surfaces with HP isopropyl alcohol (99.99% purity) and lint-free wipes. Replace Kalrez® seals every 24 months (or if leaks exceed 1×10⁻¹¹ SCCM); use LAM 856-190050-SEAL kit for compatibility.

For weak fluorinated gas use: Clean orifices every 30 months with LAM 856-190050-CLEAN kit to remove fluoride deposits—avoid abrasive tools that damage precision orifices. Store spare seals in HP packaging to prevent contamination. For 28nm critical lines, schedule maintenance during off-peak hours—target manifold downtime <2.5 hours to minimize production impact.

Service and guarantee commitment

LAM Research backs LAM 856-190050-001 with a 2.5-year standard warranty, covering defects in materials and workmanship for 14nm–45nm semiconductor use (including weak fluorinated gases). This warranty includes free replacement of faulty components (e.g., manifold body, orifices) and weekday technical support (8 AM–5 PM local time) from LAM’s global mature-node gas systems team—with dedicated engineers for weak corrosion gas applications.

For extended protection, customers can purchase LAM’s Mature-Node Gas Support Plan, which extends coverage to 4 years and includes: annual on-site leak test verification, 15% discount on replacement parts (seals, orifices), and priority technical support (≤6-hour response time). All LAM 856-190050-001 units undergo pre-shipment testing: 48-hour pressure stability checks, flow uniformity verification (±3